Ion implantation apparatus having increased source lifetime
    2.
    发明授权
    Ion implantation apparatus having increased source lifetime 失效
    离子注入装置具有增加的源寿命

    公开(公告)号:US5886355A

    公开(公告)日:1999-03-23

    申请号:US700268

    申请日:1996-08-20

    Abstract: Ion implantation equipment is modified so as to provide filament reflectors to a filament inside of an arc chamber, and to remove the electrical insulators for the filament outside of the arc chamber and providing a means of shielding, thereby reducing the formation of a conductive layer on said insulators and greatly extending the lifetime and reducing downtime of the equipment. The efficiency of the equipment is further enhanced by means of an interchangeable liner for the arc chamber that increases the wall temperature of the arc chamber and thus the electron temperature. The use of tungsten parts inside the arc chamber, obtained either by making the arc chamber itself or portions thereof of tungsten, particularly the front plate having the exit aperture for the ion beam, or by inserting a removable tungsten liner therein, decreases contamination of the ion beam. Serviceability of the arc chamber is improved by means of a unitary clamp that separately grips both the filament and filament reflectors. This clamp can also advantageously be made of tungsten.

    Abstract translation: 离子注入设备被修改,以便为电弧室内的灯丝提供灯丝反射器,并且去除电弧室外的灯丝的电绝缘体并提供屏蔽装置,从而减少导电层的形成 表示绝缘子,大大延长了使用寿命,减少了设备停机时间。 通过用于电弧室的可更换衬垫进一步提高了设备​​的效率,从而提高了电弧室的壁温,从而提高了电子温度。 通过使电弧室本身或其部分的钨,特别是具有用于离子束的出射孔的前板或通过在其中插入可移除的钨衬垫而获得的钨部件的使用减少了 离子束。 电弧室的可维护性通过单独夹紧来改善,该夹具分别夹住灯丝和灯丝反射器。 该夹具还可以有利地由钨制成。

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