公开(公告)号：US20160217970A1

公开(公告)日：2016-07-28

申请号：US14607867

申请日：2015-01-28

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Anwar HUSAIN ,  Valeriy LITVAK

IPC: H01J37/20 ,  H01J37/18 ,  H01L21/265 ,  H01J37/317

CPC classification number: H01L21/265 ,  H01J2237/20 ,  H01J2237/2065 ,  H01J2237/31701 ,  H01L21/67109 ,  H01L21/67167 ,  H01L21/67213

Abstract: An ion implanter comprising a process chamber, a FOUP and a temperature treating assembly and a method using the same are provided. A workpiece can be implanted according to a recipe of an ion implantation in the process chamber. The FOUP can transfer a workpiece toward and away from the process chamber. The temperature treating assembly comprises a vacuum chamber, a heating module and a cooling module. The vacuum chamber communicates with the process chamber and has a heating space and a cooling space next to the heating space. The heating module is mounted on the vacuum chamber from a side of the heating space for heating the workpiece located in the heating space to a first temperature. The cooling module is mounted in the cooling space for cooling the workpiece located in the cooling space to a second temperature different from the first temperature.

Abstract translation: 提供了包括处理室，FOUP和温度处理组件的离子注入机及其使用方法。 可以根据处理室中的离子注入的配方植入工件。 FOUP可以将工件朝向和远离处理室传送。 温度处理组件包括真空室，加热模块和冷却模块。 真空室与处理室连通，并具有加热空间和靠近加热空间的冷却空间。 加热模块从加热空间的一侧安装在真空室上，用于将位于加热空间中的工件加热至第一温度。 冷却模块安装在冷却空间中，用于将位于冷却空间中的工件冷却到与第一温度不同的第二温度。

公开(公告)号：US20160203950A1

公开(公告)日：2016-07-14

申请号：US14595813

申请日：2015-01-13

Applicant: ADVANCED ION BEAM TECHNOLOGY, INC.

Inventor： Anwar HUSAIN ,  Tzuyuan YIIN ,  Tienyu SHENG

IPC: H01J37/317 ,  C23C14/48 ,  H01J37/244 ,  G01K7/22 ,  H01J37/20

CPC classification number: H01J37/3171 ,  C23C14/48 ,  G01K7/22 ,  H01J37/185 ,  H01J37/20 ,  H01J37/244 ,  H01J2237/2001 ,  H01J2237/202 ,  H01J2237/20292 ,  H01J2237/31701 ,  H01J2237/31705

Abstract: A method for a recipe of a low temperature implantation comprises: pre-cooling a workpiece transferred from a FOUP to a lower temperature to meet the recipe, implanting the workpiece according to the recipe, and post-heating the workpiece to a higher temperature before returning the workpiece to the FOUP. Further, an ion implanter comprising a process chamber, a FOUP, a cooling module and a heating module is provided. The workpiece can be implanted according to the recipe in the process chamber. The FOUP can transfer the workpiece toward and away from the process chamber. The cooling module is disposed outside the process chamber and can pre-cool the workpiece to the lower temperature to meet the recipe before implanting the workpiece. The heating module is disposed outside the process chamber and can post-heat the workpiece to the higher temperature before returning the workpiece to the FOUP.

Abstract translation: 一种用于低温植入配方的方法包括：将从FOUP传送的工件预冷到较低温度以满足配方，根据配方植入工件，并在返回之前将工件后加热到更高的温度 工件到FOUP。 此外，提供了包括处理室，FOUP，冷却模块和加热模块的离子注入机。 可以根据处理室中的配方植入工件。 FOUP可以将工件朝向和远离处理室传送。 冷却模块设置在处理室外部，并且可以在植入工件之前将工件预冷却到较低温度以满足配方。 加热模块设置在处理室外部，并可在将工件返回到FOUP之前将工件后加热到更高的温度。