Abstract:
A shielding assembly for use in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, includes one or more removable shielding members configured to cover inner surfaces of a mass analyzing chamber. The shielding assembly reduces process by-products from accumulating on the inner surfaces. In one embodiment, a shielding assembly includes first and second shielding members, each having a unitary construction and configured to cover a magnetic area in the mass analyzing chamber. The shielding members desirably are made entirely of graphite or impregnated graphite to minimize contamination of the semiconductor device being processed caused by metal particles eroded from the inner surfaces of the mass analyzing chamber.
Abstract:
There is provided a plasma generating apparatus having a plasma gun which can remove droplets mixed with plasma efficiently without reducing the effective amount of plasma generated by vacuum arc discharge and in which a droplet removing portion can be constituted easily and inexpensively, and precision of surface treatment of films by high purity plasma can be enhanced. Periphery of a cathode (407) of said plasma gun is surrounded by an enclosure member (420) and a droplet removing device (406) constituted by laying a plurality of droplet collecting members (411) in multilayer is provided on the inside of the enclosure member (420). The enclosure member (420), the collecting member (411) and a plasma advancing path (402) have no relation connected with an arc power supply (409) and are held in an electrically neutral floating state.
Abstract:
A shielding assembly for use in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, includes one or more removable shielding members configured to cover inner surfaces of a mass analyzing chamber. The shielding assembly reduces process by-products from accumulating on the inner surfaces. In one embodiment, a shielding assembly includes first and second shielding members, each having a unitary construction and configured to cover a magnetic area in the mass analyzing chamber. The shielding members desirably are made entirely of graphite or impregnated graphite to minimize contamination of the semiconductor device being processed caused by metal particles eroded from the inner surfaces of the mass analyzing chamber.
Abstract:
Letting core-loss energy of an objective element be E.sub.c, and width of the energy selection slit be .DELTA.E. Initially, a pre-edge image obtained by increasing an acceleration voltage of an electron gun by E.sub.c -.DELTA.E and a pre-pre-edge image obtained by increasing an acceleration voltage by E.sub.c -.DELTA.E are taken with the same exposure time, and an intensity ratio R of the pre-edge image to the pre-pre-edge image is calculated. Next, a post-edge image obtained by increasing an acceleration voltage by E.sub.c is taken with an exposure time t.sub.pre, and a pre-edge image is taken with an exposure time R.times.t.sub.pre. An element distribution image of the objective element can be obtained by simply performing image subtraction of the pre-edge image from the post-edge image in a computer.
Abstract:
A transmission electron microscope system equipped with an energy filter and capable of displaying a two-dimensional distribution map of element of concern on a real time basis. A transmission electron microscope incorporating an energy filer is equipped with a television camera for recording two types of energy-loss images in separate frame memories, respectively. For effecting background processing for image data, intensity of an image to be stored in one frame memory is attenuated with a constant ratio by an intensity regulating mechanism. A signal indicative of difference between the image data stored in the respective frame memories is outputted to a monitor as a picture signal.
Abstract:
A charged-particle beam correction arrangement for a charged-particle analyzer having deflecting electrodes which focus charged particles emitted from a sample onto a center axis, an extension thereof, or onto an identical circumference with its center on the axis, a slit which is disposed at the focus point, and an energy analyzer whose object point lies at the focus point. The charged-particle beam correction arrangement is disposed axially symmetrically in the vicinity of the path of the charged particles between the sample and the slit to correct a deformation in the focusing of the charged-particle beam. BACKGROUND OF THE INVENTIONThe present invention relates to a charged-particle analyzer.For the analysis of a feeble electron beam of low energy, such as Auger electrons and photoelectrons in the surface analysis, it is important to efficiently utilize the electrons emitted from a sample. Accordingly, it is necessary that the accepted solid angle (= the solid angle of electron rays entering an analyzing system/the entire solid angle of electron rays emitted from a sample) be wide.As an optimum structure based on such requirement, an analyzing equipment shown in FIG. 1 has been proposed (Japanese Patent Application No. 12283/76). The feature of this equipment is that a deflecting system consisting of two inner and outer electrodes is arranged axially symmetrically around a sample and that signals emitted from the sample and entering the deflecting system are caused to depict a greatly curved track, whereupon they are focused on the center axis of the equipment or a circumference with its center on the axis again. Further, at a stage succeeding the deflecting system, an analyzing system is arranged in such electrooptical relation that the point of the above focusing is considered as the emission point of the signals. Thus, an energy analysis of photo-electrons, Auger electrons, etc. is carried out.FIG. 1 is a constructional view showing the prior art equipment described above including an electron gun. An electron beam 2 produced from the electron gun is focused by a focusing lens 3, and irradiates a sample 4. Charged particles 5, such as Auger electrons, are emitted from the irradiated point P of the sample 4 in substantially the COS-Law spacial distribution. Among the charged particles, rays of electrons are surrounded by two cones whose vertexes are the point P and whose half vertical angles are .theta. + a and .theta. - a, which rays enter between deflecting electrodes 6 and 7. The deflecting electrodes 6 and 7 are disposed axially symmetrically and are L-shaped in section so as to form a double electrode system.Within the deflecting electrode system, the rays of electrons depict greatly curved tracks owing to a deflecting electric field. Further, the rays of electrons have the tracks corrected by an auxiliary electrode 8 and are converged in the first order of the angle a onto a slit 9 situated at a stage succeeding the auxiliary electrode 8. After passing through the slit 9, the rays travel so as to cross on the axis of the equipment. They are subjected then to the energy analysis by a cylindrical mirror type analyzer 10 arranged after the slit 9 with only electrons having certain specific energy being converged onto a detection slit 9' which is placed on the axis, signals being detected by a detector 11 which is disposed behind the detecting slit 9'.The energy analysis of the charged particles 5 emitted from the sample becomes possible in such a way that voltages to be applied to the deflecting electrodes 6, 7, the auxiliary electrode 8, and the electrode of the cylindrical mirror type analyzer 10 are appropriately selected with divider resistances 12, 13 and 14 connected to a power source 20 and then scanned at a fixed ratio.When it is desired to have a high sensitivity of analysis utilizing the aforedescribed analyzing system, the signal obtained from the sample must of course be received at the widest possible accepted solid angle as stated above. Additionally, the loss of signal between the deflecting system and the slit must be confined to a minimum. To this end, it is necessary that the rays of electrons at the time when they pass through the slit 9 have the best possible circularity so as to reduce the amount to which the rays are intercepted by the end face of the slit 9.In this respect, a glass plate coated with a phosphor was placed at the position of the slit 9 in the aforedescribed equipment, and the shape of the rays of electrons focused on this point was directly observed. It was determined that the rays of electrons were not truly circular, but rather often presented a ring shape deformed in one direction or a shape having a long tail at a certain part.The cause therefor was studied, and has been revealed to be a kind of electrooptical astigmatism attributed to the fact that the electrodes were not fixed coaxially or that the parallelism of each electrode was not maintained. Therefore, in constructing the equipment, careful attention was pair to the finish precision of the electrodes and the assembling was carefully executed. While considerable improvements were thus effected, it has been determined that a satisfactory result has not been attained.SUMMARY OF THE INVENTIONAn object of the present invention is to provide an improved charged-particle analyzer.Another object of the present invention is to provide a charged-particle analyzer which makes it possible to set a wide accepted solid angle for signals and to attach a sample of large area without greatly decreasing the accepted solid angle.These and other objects are attained by a charged-particle analyzer having an irradiation device for irradiating a sample with a primary beam, a deflecting electrode system for focusing charged particles emitted from the sample onto the center axis of the primary beam or an extension thereof or onto an identical circumference with its center located on the axis or the extension, a slit which is disposed at the focus point of the charged particles, an energy analyzing system whose object point lies at the focus point, a detector for detecting the charged particles analyzed by the energy analyzing system, and a charged-particle beam correction arrangement disposed axially symmetrically in the vicinity of the path of the charged particles between the sample and the slit.
Abstract:
An ion implantation system, ion source, and method are provided having a gaseous aluminum-based ion source material. The gaseous aluminum-based ion source material can be, or include, dimethylaluminum chloride (DMAC), where the DMAC is a liquid that transitions into vapor phase at room temperature. An ion source receives and ionizes the gaseous aluminum-based ion source material to form an ion beam. A low-pressure gas bottle supplies the DMAC as a gas to an arc chamber of the ion source by a primary gas line. A separate, secondary gas line supplies a co-gas, such as a fluorine-containing molecule, to the ion source, where the co-gas and DMAC reduce an energetic carbon cross-contamination and/or increase doubly charged aluminum.
Abstract:
A system for performing surface analysis on a material, includes a pulsed electron source that forms a monochromatic beam of incident electrons; means for conveying the incident electrons to the surface of a sample of material, so as to form backscattered electrons, and the backscattered electrons to detecting means, the conveying means comprising at least one electron optical system; means for detecting the backscattered electrons; the pulsed electron source comprising: a source of atoms; a continuous-wave laser beam configured to form a laser excitation zone able to excite the atoms to Rydberg states; a pulsed electric field on either side of the laser excitation zone, the pulsed electric field being configured to ionize at least the excited atoms and to form a monochromatic beam of electrons.
Abstract:
An electron energy loss spectrometer is described having a direct detection sensor, a high speed shutter and a sensor processor wherein the sensor processor combines images from individual sensor read-outs and converts a two dimensional image from said sensor into a one dimensional spectrum and wherein the one dimensional spectrum is output to a computer and operation of the high speed shutter is integrated with timing of imaging the sensor. The shutter is controlled to allow reduction in exposure of images corresponding to the individual sensor readouts. A plurality of images are exposed by imaging less than the full possible exposure and wherein the plurality of images are combined to form a composite image. The plurality of images can be comprised of images created by exposing the sensor for different exposure times.
Abstract:
A transmission electron microscope in which a sample is positioned in a sample plane 9b comprises an objective lens 11b, a first projection lens system 61b having plural lenses, a second projection lens 63b system having plural lenses, and an analyzing system.The sample plane 9b is imaged into an intermediate image plane 71, a diffraction plane 15b of the objective lens 11b is imaged into an intermediate diffraction plane 67b, and either a) the intermediate image plane is imaged into an entrance image plane of the analyzing system and the intermediate diffraction plane is imaged into an entrance pupil plane of the analyzing system, or b) the intermediate image plane 71 is imaged into the entrance pupil plane 65b and the intermediate diffraction plane 67b is imaged into the entrance image plane 21b.