Shielding assembly for semiconductor manufacturing apparatus and method of using the same
    21.
    发明授权
    Shielding assembly for semiconductor manufacturing apparatus and method of using the same 有权
    半导体制造装置的屏蔽组件及其使用方法

    公开(公告)号:US07772576B2

    公开(公告)日:2010-08-10

    申请号:US12150207

    申请日:2008-04-24

    Abstract: A shielding assembly for use in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, includes one or more removable shielding members configured to cover inner surfaces of a mass analyzing chamber. The shielding assembly reduces process by-products from accumulating on the inner surfaces. In one embodiment, a shielding assembly includes first and second shielding members, each having a unitary construction and configured to cover a magnetic area in the mass analyzing chamber. The shielding members desirably are made entirely of graphite or impregnated graphite to minimize contamination of the semiconductor device being processed caused by metal particles eroded from the inner surfaces of the mass analyzing chamber.

    Abstract translation: 用于半导体制造装置(例如离子注入装置)中的屏蔽组件包括构造成覆盖质量分析室的内表面的一个或多个可移除屏蔽构件。 屏蔽组件减少了积累在内表面上的过程副产物。 在一个实施例中,屏蔽组件包括第一和第二屏蔽构件,每个屏蔽构件具有整体构造并且构造成覆盖质量分析室中的磁性区域。 屏蔽构件理想地由石墨或浸渍石墨制成,以最小化由被质量分析室的内表面侵蚀的金属颗粒引起的被处理半导体器件的污染。

    PLASMA GENERATING APPARATUS RENDERED ELECTRICALLY NEUTRAL ON THE PERIPHERY OF PLASMA GUN
    22.
    发明申请
    PLASMA GENERATING APPARATUS RENDERED ELECTRICALLY NEUTRAL ON THE PERIPHERY OF PLASMA GUN 审中-公开
    等离子体发生装置在等离子体枪的外围处置电中性

    公开(公告)号:US20100059369A1

    公开(公告)日:2010-03-11

    申请号:US12449951

    申请日:2008-03-27

    Applicant: Yuichi Shiina

    Inventor: Yuichi Shiina

    Abstract: There is provided a plasma generating apparatus having a plasma gun which can remove droplets mixed with plasma efficiently without reducing the effective amount of plasma generated by vacuum arc discharge and in which a droplet removing portion can be constituted easily and inexpensively, and precision of surface treatment of films by high purity plasma can be enhanced. Periphery of a cathode (407) of said plasma gun is surrounded by an enclosure member (420) and a droplet removing device (406) constituted by laying a plurality of droplet collecting members (411) in multilayer is provided on the inside of the enclosure member (420). The enclosure member (420), the collecting member (411) and a plasma advancing path (402) have no relation connected with an arc power supply (409) and are held in an electrically neutral floating state.

    Abstract translation: 提供了一种具有等离子体枪的等离子体发生装置,其能够有效地除去与等离子体混合的液滴,而不会减少由真空电弧放电产生的等离子体的有效量,并且其中可以容易且廉价地构成液滴除去部分,并且表面处理的精度 的高纯度等离子体膜可以提高。 所述等离子体枪的阴极(407)的周边被封闭构件(420)包围,并且通过将多个液滴收集构件(411)放置在多层中而构成的液滴去除装置(406)设置在外壳的内部 会员(420)。 封闭构件(420),收集构件(411)和等离子体行进路径(402)与电弧电源(409)没有关联,并且保持在电中性浮动状态。

    Shielding assembly for a semiconductor manufacturing apparatus and method of using the same
    23.
    发明授权
    Shielding assembly for a semiconductor manufacturing apparatus and method of using the same 失效
    一种用于半导体制造装置的屏蔽组件及其使用方法

    公开(公告)号:US07378670B2

    公开(公告)日:2008-05-27

    申请号:US10177970

    申请日:2002-06-21

    Abstract: A shielding assembly for use in a semiconductor manufacturing apparatus, such as an ion implantation apparatus, includes one or more removable shielding members configured to cover inner surfaces of a mass analyzing chamber. The shielding assembly reduces process by-products from accumulating on the inner surfaces. In one embodiment, a shielding assembly includes first and second shielding members, each having a unitary construction and configured to cover a magnetic area in the mass analyzing chamber. The shielding members desirably are made entirely of graphite or impregnated graphite to minimize contamination of the semiconductor device being processed caused by metal particles eroded from the inner surfaces of the mass analyzing chamber.

    Abstract translation: 用于半导体制造装置(例如离子注入装置)中的屏蔽组件包括构造成覆盖质量分析室的内表面的一个或多个可移除屏蔽构件。 屏蔽组件减少了积累在内表面上的过程副产物。 在一个实施例中,屏蔽组件包括第一和第二屏蔽构件,每个屏蔽构件具有整体构造并且构造成覆盖质量分析室中的磁性区域。 屏蔽构件理想地由石墨或浸渍石墨制成,以最小化由被质量分析室的内表面侵蚀的金属颗粒引起的被处理半导体器件的污染。

    Transmission electron microscope and method of observing element
distribution
    24.
    发明授权
    Transmission electron microscope and method of observing element distribution 失效
    透射电子显微镜及观察元素分布的方法

    公开(公告)号:US5981948A

    公开(公告)日:1999-11-09

    申请号:US30477

    申请日:1998-02-25

    CPC classification number: H01J37/26 H01J2237/05

    Abstract: Letting core-loss energy of an objective element be E.sub.c, and width of the energy selection slit be .DELTA.E. Initially, a pre-edge image obtained by increasing an acceleration voltage of an electron gun by E.sub.c -.DELTA.E and a pre-pre-edge image obtained by increasing an acceleration voltage by E.sub.c -.DELTA.E are taken with the same exposure time, and an intensity ratio R of the pre-edge image to the pre-pre-edge image is calculated. Next, a post-edge image obtained by increasing an acceleration voltage by E.sub.c is taken with an exposure time t.sub.pre, and a pre-edge image is taken with an exposure time R.times.t.sub.pre. An element distribution image of the objective element can be obtained by simply performing image subtraction of the pre-edge image from the post-edge image in a computer.

    Abstract translation: 使目标元素的核心损耗能量为Ec,能量选择狭缝的宽度为DELTA E.首先,通过用Ec-DELTA E增加电子枪的加速电压而获得的前缘图像和预先 以相同的曝光时间拍摄通过用Ec-DELTA E增加加速电压而获得的-edge图像,并且计算前缘图像与前前缘图像的强度比R. 接下来,利用曝光时间tpre拍摄通过用Ec增加加速电压而获得的后边缘图像,并且以曝光时间Rxtpre拍摄前边缘图像。 可以通过简单地从计算机中的后边缘图像执行预边缘图像的图像相减来获得目标元素的元素分布图像。

    Transmission electron microscope and method of observing element
distribution by using the same
    25.
    发明授权
    Transmission electron microscope and method of observing element distribution by using the same 失效
    透射电子显微镜及其使用方法观察元素分布

    公开(公告)号:US5578823A

    公开(公告)日:1996-11-26

    申请号:US571060

    申请日:1995-12-12

    CPC classification number: H01J37/28 H01J2237/05 H01J2237/221 H01J2237/24455

    Abstract: A transmission electron microscope system equipped with an energy filter and capable of displaying a two-dimensional distribution map of element of concern on a real time basis. A transmission electron microscope incorporating an energy filer is equipped with a television camera for recording two types of energy-loss images in separate frame memories, respectively. For effecting background processing for image data, intensity of an image to be stored in one frame memory is attenuated with a constant ratio by an intensity regulating mechanism. A signal indicative of difference between the image data stored in the respective frame memories is outputted to a monitor as a picture signal.

    Abstract translation: 一种透射电子显微镜系统,配备有能量过滤器,能够实时显示关注元件的二维分布图。 并入能量滤波器的透射型电子显微镜配备有分别在分离的帧存储器中记录两种类型的能量损失图像的电视摄像机。 为了进行图像数据的背景处理,通过强度调节机构以一定比例衰减要存储在一帧存储器中的图像的强度。 指示存储在各个帧存储器中的图像数据之间的差异的信号作为图像信号输出到监视器。

    Charged-particle analyzer
    26.
    发明授权
    Charged-particle analyzer 失效
    充电粒子分析仪

    公开(公告)号:US4135088A

    公开(公告)日:1979-01-16

    申请号:US810970

    申请日:1977-06-28

    CPC classification number: G01N23/225 H01J49/482 H01J2237/05

    Abstract: A charged-particle beam correction arrangement for a charged-particle analyzer having deflecting electrodes which focus charged particles emitted from a sample onto a center axis, an extension thereof, or onto an identical circumference with its center on the axis, a slit which is disposed at the focus point, and an energy analyzer whose object point lies at the focus point. The charged-particle beam correction arrangement is disposed axially symmetrically in the vicinity of the path of the charged particles between the sample and the slit to correct a deformation in the focusing of the charged-particle beam. BACKGROUND OF THE INVENTIONThe present invention relates to a charged-particle analyzer.For the analysis of a feeble electron beam of low energy, such as Auger electrons and photoelectrons in the surface analysis, it is important to efficiently utilize the electrons emitted from a sample. Accordingly, it is necessary that the accepted solid angle (= the solid angle of electron rays entering an analyzing system/the entire solid angle of electron rays emitted from a sample) be wide.As an optimum structure based on such requirement, an analyzing equipment shown in FIG. 1 has been proposed (Japanese Patent Application No. 12283/76). The feature of this equipment is that a deflecting system consisting of two inner and outer electrodes is arranged axially symmetrically around a sample and that signals emitted from the sample and entering the deflecting system are caused to depict a greatly curved track, whereupon they are focused on the center axis of the equipment or a circumference with its center on the axis again. Further, at a stage succeeding the deflecting system, an analyzing system is arranged in such electrooptical relation that the point of the above focusing is considered as the emission point of the signals. Thus, an energy analysis of photo-electrons, Auger electrons, etc. is carried out.FIG. 1 is a constructional view showing the prior art equipment described above including an electron gun. An electron beam 2 produced from the electron gun is focused by a focusing lens 3, and irradiates a sample 4. Charged particles 5, such as Auger electrons, are emitted from the irradiated point P of the sample 4 in substantially the COS-Law spacial distribution. Among the charged particles, rays of electrons are surrounded by two cones whose vertexes are the point P and whose half vertical angles are .theta. + a and .theta. - a, which rays enter between deflecting electrodes 6 and 7. The deflecting electrodes 6 and 7 are disposed axially symmetrically and are L-shaped in section so as to form a double electrode system.Within the deflecting electrode system, the rays of electrons depict greatly curved tracks owing to a deflecting electric field. Further, the rays of electrons have the tracks corrected by an auxiliary electrode 8 and are converged in the first order of the angle a onto a slit 9 situated at a stage succeeding the auxiliary electrode 8. After passing through the slit 9, the rays travel so as to cross on the axis of the equipment. They are subjected then to the energy analysis by a cylindrical mirror type analyzer 10 arranged after the slit 9 with only electrons having certain specific energy being converged onto a detection slit 9' which is placed on the axis, signals being detected by a detector 11 which is disposed behind the detecting slit 9'.The energy analysis of the charged particles 5 emitted from the sample becomes possible in such a way that voltages to be applied to the deflecting electrodes 6, 7, the auxiliary electrode 8, and the electrode of the cylindrical mirror type analyzer 10 are appropriately selected with divider resistances 12, 13 and 14 connected to a power source 20 and then scanned at a fixed ratio.When it is desired to have a high sensitivity of analysis utilizing the aforedescribed analyzing system, the signal obtained from the sample must of course be received at the widest possible accepted solid angle as stated above. Additionally, the loss of signal between the deflecting system and the slit must be confined to a minimum. To this end, it is necessary that the rays of electrons at the time when they pass through the slit 9 have the best possible circularity so as to reduce the amount to which the rays are intercepted by the end face of the slit 9.In this respect, a glass plate coated with a phosphor was placed at the position of the slit 9 in the aforedescribed equipment, and the shape of the rays of electrons focused on this point was directly observed. It was determined that the rays of electrons were not truly circular, but rather often presented a ring shape deformed in one direction or a shape having a long tail at a certain part.The cause therefor was studied, and has been revealed to be a kind of electrooptical astigmatism attributed to the fact that the electrodes were not fixed coaxially or that the parallelism of each electrode was not maintained. Therefore, in constructing the equipment, careful attention was pair to the finish precision of the electrodes and the assembling was carefully executed. While considerable improvements were thus effected, it has been determined that a satisfactory result has not been attained.SUMMARY OF THE INVENTIONAn object of the present invention is to provide an improved charged-particle analyzer.Another object of the present invention is to provide a charged-particle analyzer which makes it possible to set a wide accepted solid angle for signals and to attach a sample of large area without greatly decreasing the accepted solid angle.These and other objects are attained by a charged-particle analyzer having an irradiation device for irradiating a sample with a primary beam, a deflecting electrode system for focusing charged particles emitted from the sample onto the center axis of the primary beam or an extension thereof or onto an identical circumference with its center located on the axis or the extension, a slit which is disposed at the focus point of the charged particles, an energy analyzing system whose object point lies at the focus point, a detector for detecting the charged particles analyzed by the energy analyzing system, and a charged-particle beam correction arrangement disposed axially symmetrically in the vicinity of the path of the charged particles between the sample and the slit.

    Transmission electron microscope
    30.
    发明授权
    Transmission electron microscope 有权
    透射电子显微镜

    公开(公告)号:US08598526B2

    公开(公告)日:2013-12-03

    申请号:US13036757

    申请日:2011-02-28

    Applicant: Gerd Benner

    Inventor: Gerd Benner

    Abstract: A transmission electron microscope in which a sample is positioned in a sample plane 9b comprises an objective lens 11b, a first projection lens system 61b having plural lenses, a second projection lens 63b system having plural lenses, and an analyzing system.The sample plane 9b is imaged into an intermediate image plane 71, a diffraction plane 15b of the objective lens 11b is imaged into an intermediate diffraction plane 67b, and either a) the intermediate image plane is imaged into an entrance image plane of the analyzing system and the intermediate diffraction plane is imaged into an entrance pupil plane of the analyzing system, or b) the intermediate image plane 71 is imaged into the entrance pupil plane 65b and the intermediate diffraction plane 67b is imaged into the entrance image plane 21b.

    Abstract translation: 样品位于样品平面9b中的透射电子显微镜包括物镜11b,具有多个透镜的第一投影透镜系统61b,具有多个透镜的第二投影透镜63b系统和分析系统。 将样品平面9b成像为中间像面71,将物镜11b的衍射面15b成像为中间衍射面67b,将中间像平面成像为分析系统的入射像面 中间衍射面成像为分析系统的入射光瞳面,或者b)将中间像面71成像为入射光瞳面65b,将中间衍射面67b成像为入射像面21b。

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