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公开(公告)号：US09446945B2
公开(公告)日：2016-09-20
申请号：US14639530
申请日：2015-03-05
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Heng Tsai , Yi-Hsien Chang , Chun-Ren Cheng , Chun-Wen Cheng , Tzu-Heng Wu , Wei-Cheng Shen
IPC: H01L31/0203 , B81B7/00 , B81C1/00
CPC classification number: B81C1/00238 , B81B7/0048
Abstract: A three-dimensional (3D) integrated circuit (IC) includes a first IC and a second IC. The first IC includes a MEMS device and a first bonding structure. The second IC includes a second bonding structure. The first and second bonding structures are bonded together to couple the first IC to the second IC. A conformal barrier layer is disposed over a surface of the second IC nearest the first IC. An etch isolation structure is arranged beneath the surface of the second IC and encloses a sacrificial region which is arranged on either side of the second bonding structure and which is arranged in the second IC.
Abstract translation: 三维（3D）集成电路（IC）包括第一IC和第二IC。 第一IC包括MEMS器件和第一接合结构。 第二IC包括第二接合结构。 第一和第二接合结构被结合在一起以将第一IC耦合到第二IC。 在距离第一IC最近的第二IC的表面上设置保形阻挡层。 蚀刻隔离结构被布置在第二IC的表面下方并且包围一个牺牲区域，该牺牲区域被布置在第二接合结构的任一侧上并且被布置在第二IC中。
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公开(公告)号：US08994129B2
公开(公告)日：2015-03-31
申请号：US13946566
申请日：2013-07-19
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Ren Cheng
CPC classification number: B81B3/0059 , B81B3/0021 , B81B7/0029 , B81B2203/0127 , B81C1/00142 , B81C1/00833 , B81C3/001
Abstract: Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a substrate and a MEMS structure over the substrate, and the MEMS structure has a movable element. The movable element is surrounded by a cavity. The MEMS device also includes a fuse layer on the movable element, and the fuse layer has a wide portion and a narrow portion linked to the wide portion.
Abstract translation: 提供了用于形成微机电系统（MEMS）装置的机构的实施例。 MEMS器件包括衬底上的衬底和MEMS结构，并且MEMS结构具有可移动元件。 可移动元件被空腔包围。 MEMS器件还包括可移动元件上的熔丝层，并且熔丝层具有宽的部分和与宽部分连接的窄部分。
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公开(公告)号：US11808731B2
公开(公告)日：2023-11-07
申请号：US17135498
申请日：2020-12-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Jui-Cheng Huang , Yi-Hsien Chang , Chin-Hua Wen , Chun-Ren Cheng , Shih-Fen Huang , Tung-Tsun Chen , Yu-Jie Huang , Ching-Hui Lin , Sean Cheng , Hector Chang
IPC: G01N27/414 , B01L3/00 , B01F31/85 , B01F33/30 , H10N30/00 , H10N30/20 , G01N33/543 , C12Q1/6825
CPC classification number: G01N27/4145 , B01F31/85 , B01F33/30 , B01F33/3045 , B01L3/502707 , B01L3/502715 , B01L3/502761 , B01L3/502792 , G01N33/5438 , H10N30/1051 , H10N30/2042 , H10N30/2047 , B01L2200/12 , B01L2300/06 , B01L2300/0645 , B01L2300/0663 , B01L2300/0819 , B01L2300/0887 , B01L2300/1827 , C12Q1/6825
Abstract: A bioFET device includes a semiconductor substrate having a first surface and an opposite, parallel second surface and a plurality of bioFET sensors on the semiconductor substrate. Each of the bioFET sensors includes a gate formed on the first surface of the semiconductor substrate and a channel region formed within the semiconductor substrate beneath the gate and between source/drain (S/D) regions in the semiconductor substrate. The channel region includes a portion of the second surface of the semiconductor substrate. An isolation layer is disposed on the second surface of the semiconductor substrate. The isolation layer has an opening positioned over the channel region of more than one bioFET sensor of the plurality of bioFET sensors. An interface layer is disposed on the channel region of the more than one bioFET sensor in the opening.
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公开(公告)号：US10955379B2
公开(公告)日：2021-03-23
申请号：US16400500
申请日：2019-05-01
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Ching-Hui Lin , Chun-Ren Cheng , Shih-Fen Huang , Fu-Chun Huang
IPC: G01N27/414 , G01N27/30 , B01L3/00
Abstract: A sensor array includes a semiconductor substrate, a first plurality of FET sensors and a second plurality of FET sensors. Each of the FET sensors includes a channel region between a source and a drain region in the semiconductor substrate and underlying a gate structure disposed on a first side of the channel region, and a dielectric layer disposed on a second side of the channel region opposite from the first side of the channel region. A first plurality of capture reagents is coupled to the dielectric layer over the channel region of the first plurality of FET sensors, and a second plurality of capture reagents is coupled to the dielectric layer over the channel region of the second plurality of FET sensors. The second plurality of capture reagents is different from the first plurality of capture reagents.
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公开(公告)号：US20210061641A1
公开(公告)日：2021-03-04
申请号：US16558539
申请日：2019-09-03
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Fan Hu , Chun-Ren Cheng , Hsiang-Fu Chen , Wen-Chuan Tai
Abstract: Various embodiments of the present disclosure are directed towards a microelectromechanical system (MEMS) device. The MEMS device includes a first dielectric structure disposed over a first semiconductor substrate, where the first dielectric structure at least partially defines a cavity. A second semiconductor substrate is disposed over the first dielectric structure and includes a movable mass, where opposite sidewalls of the movable mass are disposed between opposite sidewall of the cavity. A first piezoelectric anti-stiction structure is disposed between the movable mass and the first dielectric structure, wherein the first piezoelectric anti-stiction structure includes a first piezoelectric structure and a first electrode disposed between the first piezoelectric structure and the first dielectric structure
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Patent Agency Ranking
26.发明申请公开(公告)号：US20200098969A1
公开(公告)日：2020-03-26
申请号：US16413839
申请日：2019-05-16
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Alexander Kalnitsky , Chun-Ren Cheng , Chi-Yuan Shih , Kai-Fung Chang , Shih-Fen Huang , Yi-Chuan Teng , Yi Heng Tsai , You-Ru Lin , Yan-Jie Liao
IPC: H01L41/08 , H01L41/047 , H01L41/297
Abstract: In some embodiments, a piezoelectric device is provided. The piezoelectric device includes a semiconductor substrate. A first electrode is disposed over the semiconductor substrate. A piezoelectric structure is disposed on the first electrode. A second electrode is disposed on the piezoelectric structure. A heating element is disposed over the semiconductor substrate. The heating element is configured to heat the piezoelectric structure to a recovery temperature for a period of time, where heating the piezoelectric structure to the recovery temperature for the period of time improves a degraded electrical property of the piezoelectric device.
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公开(公告)号：US10473616B2
公开(公告)日：2019-11-12
申请号：US15649963
申请日：2017-07-14
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Shao Liu , Chun-Ren Cheng , Ching-Ray Chen , Yi-Hsien Chang , Fei-Lung Lai , Chun-Wen Cheng
IPC: G01N27/414 , H01L29/66 , H01L21/311
Abstract: The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.
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公开(公告)号：US09910009B2
公开(公告)日：2018-03-06
申请号：US15661798
申请日：2017-07-27
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Alexander Kalnitsky , Yi-Shao Liu , Kai-Chih Liang , Chia-Hua Chu , Chun-Ren Cheng , Chun-Wen Cheng
IPC: H01L51/05 , G01N27/414 , H01L27/12 , H01L21/84 , H01L51/00
CPC classification number: G01N27/4145 , G01N27/414 , G01N27/4148 , H01L21/84 , H01L27/1203 , H01L51/0093
Abstract: The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
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公开(公告)号：US20170343498A1
公开(公告)日：2017-11-30
申请号：US15216853
申请日：2016-07-22
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Alexander Kalnitsky , Yi-Hsien Chang , Chun-Ren Cheng , Jui-Cheng Huang , Shih-Fen Huang , Tung-Tsun Chen , Ching-Hui Lin
IPC: G01N27/04 , H01L21/768 , H01L23/522 , H01L29/786
Abstract: A biosensor with a heater embedded therein is provided. A semiconductor substrate comprises a source region and a drain region. The heater is under the semiconductor substrate. A sensing well is over the semiconductor substrate, laterally between the source region and the drain region. A sensing layer lines the sensing well. A method for manufacturing the biosensor is also provided.
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公开(公告)号：US09352953B2
公开(公告)日：2016-05-31
申请号：US14638228
申请日：2015-03-04
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chun-Ren Cheng
CPC classification number: B81B3/0059 , B81B3/0021 , B81B7/0029 , B81B2203/0127 , B81C1/00142 , B81C1/00833 , B81C3/001
Abstract: Structures and formation methods of a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a substrate and a MEMS structure over the substrate, and the MEMS structure has a movable element. The movable element is surrounded by a cavity. The MEMS device also includes a fuse layer on the movable element.
Abstract translation: 提供了微机电系统（MEMS）装置的结构和形成方法。 MEMS器件包括衬底上的衬底和MEMS结构，并且MEMS结构具有可移动元件。 可移动元件被空腔包围。 MEMS器件还包括可移动元件上的熔丝层。
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