公开(公告)号：US20180238689A1

公开(公告)日：2018-08-23

申请号：US15899906

申请日：2018-02-20

Applicant: INVENSENSE, INC.

Inventor： Jaakko Ruohio ,  Luca Coronato ,  Giacomo Gafforelli

IPC: G01C19/5712

CPC classification number: G01C19/5712 ,  B81B3/0059 ,  B81B2201/0242 ,  B81B2203/0154 ,  B81B2203/0163 ,  B81B2203/0307 ,  G01C19/574 ,  G01P15/125

Abstract: A MEMS sensor includes a substrate and a MEMS layer. A plurality of anchoring points within the MEMS layer suspend a suspended spring-mass system that includes active micromechanical components that respond to a force of interest such as linear acceleration, angular velocity, pressure, or magnetic field. Springs and rigid masses couple the active components to the anchoring points, such that displacements of the anchoring points do not substantially cause the active components within the MEMS layer to move out-of-plane.

公开(公告)号：US09738508B2

公开(公告)日：2017-08-22

申请号：US14930926

申请日：2015-11-03

Applicant: Semiconductor Manufacturing International (Shanghai) Corporation

Inventor： Zhongshan Hong

IPC: H01L41/113 ,  B81B3/00 ,  B81C1/00 ,  G01L9/00

CPC classification number: B81B3/0059 ,  B81B3/0021 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/0315 ,  B81B2203/0392 ,  B81B2203/04 ,  B81C1/00023 ,  B81C1/00134 ,  B81C1/00166 ,  B81C1/00182 ,  B81C1/00373 ,  B81C1/00523 ,  G01L9/00 ,  G01L9/0045 ,  G01L9/0047 ,  G01L9/0073 ,  H01L41/113

Abstract: A MEMS capacitive pressure sensor is provided. The MEMS capacitive pressure sensor includes a substrate having a first region and a second region, and a first dielectric layer formed on the substrate. The capacitive pressure sensor also includes a second dielectric layer having a step surface profile formed on the first dielectric layer, and a first electrode layer having a step surface profile formed on the second dielectric layer. Further, the MEMS capacitive pressure sensor includes an insulation layer formed on the first electrode layer, and a second electrode layer having a step surface profile with a portion formed on the insulation layer in the peripheral region and the rest suspended over the first electrode layer in the device region. Further, the MEMS capacitive pressure sensor also includes a chamber having a step surface profile formed between the first electrode layer and the second electrode layer.

公开(公告)号：US09611135B1

公开(公告)日：2017-04-04

申请号：US14928702

申请日：2015-10-30

Applicant: Infineon Technologies AG

Inventor： Wolfgang Klein

IPC: H01L29/84 ,  H04R19/04 ,  B81B3/00 ,  H02N1/00 ,  B81C1/00 ,  H04R19/00

CPC classification number: B81B3/0021 ,  B81B3/0059 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81B2203/0307 ,  B81C1/00158 ,  B81C2201/0197 ,  H01L29/84 ,  H02N1/008 ,  H02N2/02 ,  H04R1/04 ,  H04R1/06 ,  H04R19/005 ,  H04R19/04 ,  H04R31/003 ,  H04R2201/003 ,  H04R2207/021 ,  H04R2231/003 ,  H04R2410/03

Abstract: According to an embodiment, a MEMS device includes a deflectable membrane including a first plurality of electrostatic comb fingers, a first anchor structure including a second plurality of electrostatic comb fingers interdigitated with a first subset of the first plurality of electrostatic comb fingers, and a second anchor structure including a third plurality of electrostatic comb fingers interdigitated with a second subset of the first plurality of electrostatic comb fingers. The second plurality of electrostatic comb fingers are offset from the first plurality of electrostatic comb fingers in a first direction and the third plurality of electrostatic comb fingers are offset from the first plurality of electrostatic comb fingers in a second direction, where the first direction is different from the second direction.

公开(公告)号：US09593007B2

公开(公告)日：2017-03-14

申请号：US14519772

申请日：2014-10-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. Jahnes ,  Anthony K. Stamper

IPC: H04R31/00 ,  B81B3/00 ,  B81C1/00 ,  G06F17/50 ,  B81B7/00 ,  H01L41/113 ,  H01L41/09

CPC classification number: B81B3/001 ,  B81B3/0021 ,  B81B3/0059 ,  B81B3/0072 ,  B81B7/0006 ,  B81B7/008 ,  B81B2201/016 ,  B81B2203/0163 ,  B81C1/00015 ,  B81C1/0015 ,  B81C1/00476 ,  G06F17/5045 ,  H01L41/094 ,  H01L41/1134 ,  H01L41/1138 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/4908 ,  Y10T29/49121

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. A wiring layer is formed on a substrate comprising actuator electrodes and a contact electrode. A MEMS beam is formed above the wiring layer and at least one spring is formed and attached to at least one end of the MEMS beam. At least one spring has a predetermined spring constant based on a coefficient of thermal expansion (CTE) mismatch between materials of the MEMS structure and the spring. Additionally, an array of mini-bumps is formed between the wiring layer and the MEMS beam. A size of a space between fixed actuator electrodes or dummy actuators is determined based on a lateral shift of the MEMS beam.

Abstract translation: 提供微机电系统（MEMS）结构，制造方法和设计结构。 在包括致动器电极和接触电极的基板上形成布线层。 在布线层上方形成有MEMS光束，并且形成至少一个弹簧并将其连接到MEMS光束的至少一端。 基于MEMS结构的材料与弹簧之间的热膨胀系数（CTE）失配，至少一个弹簧具有预定的弹簧常数。 此外，在布线层和MEMS光束之间形成微小凸起阵列。 基于MEMS梁的横向偏移来确定固定致动器电极或虚拟致动器之间的空间的大小。

公开(公告)号：US20160336635A1

公开(公告)日：2016-11-17

申请号：US14563018

申请日：2014-12-08

Applicant: Nuvotronics, LLC

Inventor： William D. Houck ,  David W. Sherrer

IPC: H01P3/06 ,  B81B3/00 ,  H01P11/00

CPC classification number: H01P3/06 ,  B81B3/0059 ,  B81B2203/0109 ,  B81B2203/0307 ,  H01P11/005 ,  Y10T29/49123 ,  Y10T428/12361 ,  Y10T428/12389 ,  Y10T428/24331 ,  Y10T428/24545

Abstract: Provided are three-dimensional microstructures and their methods of formation. The microstructures are formed by a sequential build process and include microstructural elements which are affixed to one another. The microstructures find use, for example, in coaxial transmission lines for electromagnetic energy.

Abstract translation: 提供三维微结构及其形成方法。 微结构通过顺序构建工艺形成，并且包括彼此贴合的微结构元件。 微结构可用于例如用于电磁能的同轴传输线。

公开(公告)号：US09206030B2

公开(公告)日：2015-12-08

申请号：US14095060

申请日：2013-12-03

Applicant: Semiconductor Manufacturing International (Shanghai) Corporation

Inventor： Zhongshan Hong

IPC: H01L21/00 ,  B81B3/00 ,  B81C1/00 ,  G01L9/00

CPC classification number: B81B3/0059 ,  B81B3/0021 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/0315 ,  B81B2203/0392 ,  B81B2203/04 ,  B81C1/00023 ,  B81C1/00134 ,  B81C1/00166 ,  B81C1/00182 ,  B81C1/00373 ,  B81C1/00523 ,  G01L9/00 ,  G01L9/0045 ,  G01L9/0047 ,  G01L9/0073 ,  H01L41/113

Abstract: A MEMS capacitive pressure sensor is provided. The MEMS capacitive pressure sensor includes a substrate having a first region and a second region, and a first dielectric layer formed on the substrate. The capacitive pressure sensor also includes a second dielectric layer having a step surface profile formed on the first dielectric layer, and a first electrode layer having a step surface profile formed on the second dielectric layer. Further, the MEMS capacitive pressure sensor includes an insulation layer formed on the first electrode layer, and a second electrode layer having a step surface profile with a portion formed on the insulation layer in the peripheral region and the rest suspended over the first electrode layer in the device region. Further, the MEMS capacitive pressure sensor also includes a chamber having a step surface profile formed between the first electrode layer and the second electrode layer.

Abstract translation: 提供MEMS电容式压力传感器。 MEMS电容式压力传感器包括具有第一区域和第二区域的基板和形成在基板上的第一介电层。 电容式压力传感器还包括具有形成在第一电介质层上的台阶表面轮廓的第二电介质层，以及形成在第二电介质层上的具有台阶表面轮廓的第一电极层。 此外，MEMS电容式压力传感器包括形成在第一电极层上的绝缘层和具有台阶表面轮廓的第二电极层，该第二电极层具有形成在周边区域中的绝缘层上的部分，并且其余部分悬挂在第一电极层上 设备区域。 此外，MEMS电容式压力传感器还包括在第一电极层和第二电极层之间形成有台阶表面轮廓的腔室。

公开(公告)号：US20150338435A1

公开(公告)日：2015-11-26

申请号：US14818095

申请日：2015-08-04

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chia-Hua Chu ,  Chun-Wen Cheng

IPC: G01P15/125 ,  G01P15/08 ,  B81C1/00 ,  G01C19/5719 ,  B81B3/00

CPC classification number: B81B3/0059 ,  B81B3/0056 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0118 ,  B81C1/00158 ,  B81C1/00714 ,  B81C2201/0112 ,  B81C2201/0132 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/125

Abstract: Methods and apparatus for forming MEMS devices. An apparatus includes at least a portion of a semiconductor substrate having a first thickness and patterned to form a moveable mass; a moving sense electrode forming the first plate of a first capacitance; at least one anchor patterned from the semiconductor substrate and having a portion that forms the second plate of the first capacitance and spaced by a first gap from the first plate; a layer of semiconductor material of a second thickness patterned to form a first electrode forming a first plate of a second capacitance and further patterned to form a second electrode overlying the at least one anchor and forming a second plate spaced by a second gap that is less than the first gap; wherein a total capacitance is formed that is the sum of the first capacitance and the second capacitance. Methods are disclosed.

Abstract translation: 用于形成MEMS器件的方法和装置。 一种装置包括具有第一厚度的半导体衬底的至少一部分并被图案化以形成可移动质量块; 形成第一电容的第一板的移动感测电极; 所述至少一个锚定体从所述半导体衬底图案化并且具有形成所述第一电容的所述第二板的部分并与所述第一板间隔开第一间隙; 图案化的第二厚度的半导体材料层，以形成形成第二电容的第一板的第一电极，并进一步图案化以形成覆盖至少一个锚的第二电极，并形成间隔第二间隙的第二板，该第二间隙较小 比第一个差距; 其中形成的总电容是第一电容和第二电容之和。 公开了方法。

公开(公告)号：US20150014797A1

公开(公告)日：2015-01-15

申请号：US14327180

申请日：2014-07-09

Applicant: Christoph SCHELLING ,  Stefan SINGER ,  Jochen ZOELLIN

Inventor： Christoph SCHELLING ,  Stefan SINGER ,  Jochen ZOELLIN

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0059 ,  B81B3/0072 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81C1/00158 ,  B81C1/00666 ,  H04R19/005 ,  H04R2201/003

Abstract: A microphone structure of an MEMS device has a layer construction including: a base substrate; a deflectable microphone diaphragm at least partly spanning a through-opening in the substrate; a deflectable electrode of a microphone condenser system; a stationary counter-element having ventilation openings situated in the layer construction over the microphone diaphragm and acting as a bearer for a stationary electrode of the microphone condenser system. The diaphragm is bonded into the layer construction on the substrate via a flexible beam. The otherwise free edge region of the diaphragm is curved in a pan shape, so that it extends both vertically and also in some regions laterally beyond the edge region of the through-opening, and the edge region of the through-opening forms a lower stop for the diaphragm movement.

Abstract translation: MEMS器件的麦克风结构具有层结构，包括：基底; 至少部分跨越所述基板中的通孔的可偏转传声器隔膜; 麦克风冷凝器系统的可偏转电极; 一个固定的相对元件，其具有位于麦克风隔膜上的层结构中的通气开口，并且用作麦克风电容器系统的固定电极的载体。 隔膜通过柔性梁结合到基板上的层结构中。 隔膜的另外的自由边缘区域以平盘形状弯曲，使得其在垂直方向上以及在一些区域中横向延伸超过通孔的边缘区域，并且通孔的边缘区域形成下部停止 用于隔膜运动。

公开(公告)号：US20130008869A1

公开(公告)日：2013-01-10

申请号：US13619548

申请日：2012-09-14

Applicant: Jurgen Daniel ,  David K. Fork ,  Armin R. Völkel

Inventor： Jurgen Daniel ,  David K. Fork ,  Armin R. Völkel

IPC: B23P13/00 ,  B44C1/22 ,  G03F7/20 ,  B22D25/02

CPC classification number: F16F3/02 ,  B81B3/0059 ,  B81B2203/0118 ,  B81C1/0015 ,  F16F1/025 ,  F16H1/125 ,  G01R1/06716 ,  G01R1/06727 ,  G01R1/06744 ,  H01L24/72 ,  H01L24/90 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15788 ,  Y10T29/49155 ,  Y10T29/49204 ,  Y10T29/49609 ,  H01L2924/00

Abstract: Various structures, such as microstructures and wall-like structures, can include parts or surfaces that are oblique. In some implementations, a cantilevered element includes a spring-like portion with a uniformly oblique surface or with another artifact of an oblique radiation technique. In some implementations, when a deflecting force is applied, a spring-like portion can provide deflection and spring force within required ranges. Various oblique radiation techniques can be used, such as radiation of a layer through a prism, and structures having spring-like portions with oblique radiation artifacts can be used in various applications, such as with downward or upward deflecting forces.

Abstract translation: 诸如微结构和壁状结构的各种结构可以包括倾斜的部分或表面。 在一些实施方案中，悬臂元件包括具有均匀倾斜表面的弹簧状部分或具有倾斜辐射技术的另一伪像。 在一些实施方案中，当施加偏转力时，弹簧状部分可以在所需范围内提供偏转和弹簧力。 可以使用各种倾斜辐射技术，例如穿过棱镜的层的辐射，并且具有具有倾斜辐射伪影的弹簧状部分的结构可以用于各种应用中，例如具有向下或向上偏转力。

公开(公告)号：US08301272B2

公开(公告)日：2012-10-30

申请号：US12327316

申请日：2008-12-03

Applicant: Nilesh D. Mankame ,  Alan L. Browne

Inventor： Nilesh D. Mankame ,  Alan L. Browne

IPC: G06F19/00

CPC classification number: B81B3/0059 ,  B81B3/0094 ,  C08G2280/00

Abstract: A compliant mechanism includes a body that is configured to generate a mechanical output in response to a mechanical input. The body has at least one region formed by an active material. The compliant mechanism also includes at least one activation device configured to selectively apply an activation signal to the at least one region. The active material is configured to undergo a change in modulus in response to the activation signal such that the output is characterized by a first magnitude or direction when the activation device applies the activation signal and a second magnitude or direction when the activation device does not apply the activation signal.

Abstract translation: 适应机构包括被配置为响应于机械输入生成机械输出的主体。 主体具有由活性材料形成的至少一个区域。 顺应机构还包括被配置为选择性地将激活信号施加到至少一个区域的至少一个激活装置。 活性材料配置为响应于激活信号而经历模量变化，使得当激活装置施加激活信号时，输出的特征在于第一幅度或方向，以及当激活装置不适用时的第二幅度或方向 激活信号。