Invention Grant
- Patent Title: MEMS capacitive pressure sensors
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Application No.: US14930926Application Date: 2015-11-03
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Publication No.: US09738508B2Publication Date: 2017-08-22
- Inventor: Zhongshan Hong
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Shanghai
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201310277659 20130703
- Main IPC: H01L41/113
- IPC: H01L41/113 ; B81B3/00 ; B81C1/00 ; G01L9/00

Abstract:
A MEMS capacitive pressure sensor is provided. The MEMS capacitive pressure sensor includes a substrate having a first region and a second region, and a first dielectric layer formed on the substrate. The capacitive pressure sensor also includes a second dielectric layer having a step surface profile formed on the first dielectric layer, and a first electrode layer having a step surface profile formed on the second dielectric layer. Further, the MEMS capacitive pressure sensor includes an insulation layer formed on the first electrode layer, and a second electrode layer having a step surface profile with a portion formed on the insulation layer in the peripheral region and the rest suspended over the first electrode layer in the device region. Further, the MEMS capacitive pressure sensor also includes a chamber having a step surface profile formed between the first electrode layer and the second electrode layer.
Public/Granted literature
- US20160152465A1 MEMS CAPACITIVE PRESSURE SENSORS Public/Granted day:2016-06-02
Information query
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