Invention Grant
- Patent Title: Isolation structure for MEMS 3D IC integration
- Patent Title (中): MEMS 3D IC集成隔离结构
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Application No.: US14639530Application Date: 2015-03-05
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Publication No.: US09446945B2Publication Date: 2016-09-20
- Inventor: Yi-Heng Tsai , Yi-Hsien Chang , Chun-Ren Cheng , Chun-Wen Cheng , Tzu-Heng Wu , Wei-Cheng Shen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Associates, LLC
- Main IPC: H01L31/0203
- IPC: H01L31/0203 ; B81B7/00 ; B81C1/00

Abstract:
A three-dimensional (3D) integrated circuit (IC) includes a first IC and a second IC. The first IC includes a MEMS device and a first bonding structure. The second IC includes a second bonding structure. The first and second bonding structures are bonded together to couple the first IC to the second IC. A conformal barrier layer is disposed over a surface of the second IC nearest the first IC. An etch isolation structure is arranged beneath the surface of the second IC and encloses a sacrificial region which is arranged on either side of the second bonding structure and which is arranged in the second IC.
Public/Granted literature
- US20160145095A1 ISOLATION STRUCTURE FOR MEMS 3D IC INTEGRATION Public/Granted day:2016-05-26
Information query
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