公开(公告)号：US20190088756A1

公开(公告)日：2019-03-21

申请号：US16183995

申请日：2018-11-08

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Wen-Han FANG ,  Chang-Yin CHEN ,  Ming-Chia TAI ,  Po-Chi WU

IPC: H01L29/423 ,  H01L29/49 ,  H01L27/092 ,  H01L21/8238

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first fin structure and a second fin structure disposed over the substrate. The semiconductor device structure includes a first gate stack disposed over the substrate and overlapping the first fin structure. The first gate stack includes a first work function layer, a first gate electrode, and a first hard mask layer, the first gate electrode is over the first work function layer, the first hard mask layer is over the first gate electrode, the first gate electrode has a first convex top surface protruding beyond a first top surface of the first work function layer. The semiconductor device structure includes a second gate stack disposed over the substrate and overlapping the second fin structure.

公开(公告)号：US20160111542A1

公开(公告)日：2016-04-21

申请号：US14517310

申请日：2014-10-17

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Zhe-Hao ZHANG ,  Tung-Wen CHENG ,  Chang-Yin CHEN ,  Che-Cheng CHANG ,  Yung-Jung CHANG

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/66 ,  H01L29/06

CPC classification number: H01L29/7851 ,  H01L21/30604 ,  H01L21/31116 ,  H01L21/76224 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823481 ,  H01L27/0886 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/66795 ,  H01L29/7848

Abstract: A fin field effect transistor (FinFET) device structure and method for forming FinFET device structure are provided. The FinFET structure includes a substrate and a fin structure extending above the substrate. The FinFET structure includes an epitaxial structure formed on the fin structure, and the epitaxial structure has a first height. The FinFET structure also includes fin sidewall spacers formed adjacent to the epitaxial structure. The sidewall spacers have a second height and the first height is greater than the second height, and the fin sidewall spacers are configured to control a volume and the first height of the epitaxial structure.

Abstract translation: 提供了一种用于形成FinFET器件结构的鳍式场效应晶体管（FinFET）器件结构和方法。 FinFET结构包括在衬底上延伸的衬底和鳍结构。 FinFET结构包括形成在鳍结构上的外延结构，并且外延结构具有第一高度。 FinFET结构还包括与外延结构相邻形成的翅片侧壁间隔物。 侧壁间隔件具有第二高度，并且第一高度大于第二高度，并且翅片侧壁间隔件构造成控制外延结构的体积和第一高度。

公开(公告)号：US20160087037A1

公开(公告)日：2016-03-24

申请号：US14490838

申请日：2014-09-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD

Inventor： Tung-Wen CHENG ,  Chang-Yin CHEN ,  Che-Cheng CHANG ,  Mu-Tsang LIN

IPC: H01L29/08 ,  H01L29/66 ,  H01L29/78 ,  H01L21/306 ,  H01L29/16 ,  H01L29/24 ,  H01L21/02 ,  H01L27/088 ,  H01L29/165

CPC classification number: H01L29/0847 ,  H01L21/3065 ,  H01L21/823807 ,  H01L21/823814 ,  H01L27/092 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/24 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/7848

Abstract: A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a first gate structure and a second gate structure formed over the substrate. The semiconductor structure further includes first recesses formed in the substrate adjacent to the first gate structure and first strained source and drain structures formed in the first recesses. The semiconductor structure further includes second recesses formed in the substrate adjacent to the second gate structure and second strained source and drain structures formed in the second recesses. In addition, each of the first recesses has a shape of a trapezoid, and each of the second recesses has a shape of an inverted trapezoid.

Abstract translation: 提供半导体结构及其形成方法。 半导体结构包括衬底和形成在衬底上的第一栅极结构和第二栅极结构。 半导体结构还包括形成在与第一栅极结构相邻的衬底中的第一凹部和形成在第一凹槽中的第一应变源极和漏极结构。 半导体结构还包括形成在基板中的与第二栅极结构相邻的第二凹槽和形成在第二凹槽中的第二应变源极和漏极结构。 另外，每个第一凹部具有梯形的形状，并且每个第二凹部具有倒梯形的形状。

公开(公告)号：US20150236132A1

公开(公告)日：2015-08-20

申请号：US14181320

申请日：2014-02-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Che-Cheng CHANG ,  Chang-Yin CHEN ,  Jr-Jung LIN ,  Chih-Han LIN ,  Yung-Jung CHANG

IPC: H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66553 ,  H01L29/7848 ,  H01L29/785

Abstract: Embodiments for forming a fin field effect transistor (FinFET) device structure are provided. The FinFET device structure includes a fin structure extending above a substrate and a gate dielectric layer formed over the fin structure. The FinFET device structure also includes a gate electrode formed on the gate dielectric layer. The FinFET device structure further includes a number of gate spacers formed on sidewalls of the gate electrode. The gate spacers are in direct contact with the fin structure.

Abstract translation: 提供了用于形成鳍状场效应晶体管（FinFET）器件结构的实施例。 FinFET器件结构包括在衬底上延伸的翅片结构和形成在鳍结构上的栅极电介质层。 FinFET器件结构还包括形成在栅极介电层上的栅电极。 FinFET器件结构还包括形成在栅电极的侧壁上的多个栅极间隔物。 栅极间隔件与翅片结构直接接触。