Abstract:
Embodiments of the present invention describe a semiconductor package having an embedded die. The semiconductor package comprises a coreless substrate that contains the embedded die. The semiconductor package provides die stacking or package stacking capabilities. Furthermore, embodiments of the present invention describe a method of fabricating the semiconductor package that minimizes assembly costs.
Abstract:
A microelectronic package includes a substrate (110), a die (120) embedded within the substrate, the die having a front side (121) and a back side (122) and a through-silicon-via (123) therein, build-up layers (130) built up over the front side of the die, and a power plane (140) in physical contact with the back side of the die. In another embodiment, the microelectronic package comprises a substrate (210), a first die (220) and a second die (260) embedded in the substrate and having a front side (221, 261) and a back side (222, 262) and a through-silicon-via (223, 263) therein, build-up layers (230) over the front sides of the first and second dies, and an electrically conductive structure (240) in physical contact with the back sides of the first and second dies.
Abstract:
A low-profile microelectronic package includes a die (110) (having a first surface (111) and a second surface (112)) and a package substrate (120). The substrate includes an electrically insulating layer (121) that forms a first side (126) of the substrate, an electrically conductive layer (122) connected to the die, and a protective layer (123) over the conductive layer that forms a second side (127) of the substrate. The first surface of the die is located at the first side of the substrate. The insulating layer has a plurality of pads (130) formed therein. The package further includes an array of interconnect structures (140) located at the first side of the substrate. Each interconnect structure in the array of interconnect structures has a first end (141) and a second end (142), and the first end is connected to one of the pads.
Abstract:
A structure includes a hybrid substrate for supporting a semiconductive device that includes a bumpless build-up layer in which the semiconductive device is embedded and a laminated-core structure. The bumpless build-up layer and the laminated-core structure are rendered an integral apparatus by a reinforcement plating that connects to a plated through hole in the laminated-core structure and to a subsequent bond pad of the bumpless build-up layer structure.
Abstract:
Embodiments of the present invention describe a semiconductor package having an embedded die. The semiconductor package comprises a coreless substrate that contains the embedded die. The semiconductor package provides die stacking or package stacking capabilities. Furthermore, embodiments of the present invention describe a method of fabricating the semiconductor package that minimizes assembly costs.
Abstract:
Methods and associated structures of forming a microelectronic device are described. Those methods may include heating a portion of a ceramic substrate adjacent to a C4 area with a defocused laser, wherein a smooth region of the substrate is created, and applying an underfill material to the C4 area, wherein the underfill material does not extend past the smooth region.
Abstract:
Microball delivery solutions for solder bumping are generally described. In this regard, according to one example embodiment, a microball delivery assembly includes a mask with at least two microball holder(s) to hold at least two different sizes of microball(s) that may correspond with at least two different-sized openings on a substrate, to provide simultaneous delivery of different-sized microballs upon a substrate.
Abstract:
A structure includes a hybrid substrate for supporting a semiconductive device that includes a bumpless build-up layer in which the semiconductive device is embedded and a laminated-core structure. The bumpless build-up layer and the laminated-core structure are rendered an integral apparatus by a reinforcement plating that connects to a plated through hole in the laminated-core structure and to a subsequent bond pad of the bumpless build-up layer structure.
Abstract:
A microelectronic package includes a substrate (110), a die (120) embedded within the substrate, the die having a front side (121) and a back side (122) and a through-silicon-via (123) therein, build-up layers (130) built up over the front side of the die, and a power plane (140) in physical contact with the back side of the die. In another embodiment, the microelectronic package comprises a substrate (210), a first die (220) and a second die (260) embedded in the substrate and having a front side (221, 261) and a back side (222, 262) and a through-silicon-via (223, 263) therein, build-up layers (230) over the front sides of the first and second dies, and an electrically conductive structure (240) in physical contact with the back sides of the first and second dies.
Abstract:
A structure that may be used in substrate solder bumping comprises a substrate (110), a solder resist layer (120) disposed over the substrate, a plurality of solder resist openings (121) in a surface (122) of the solder resist layer, a conformal barrier layer (130) having a first portion (131) over the surface of the solder resist layer and a second portion (132) in the solder resist openings, a mask layer (140) over the first portion of the conformal barrier layer, and a solder material (150) in the solder resist openings over the metal layer. The conformal barrier layer acts as a barrier against interaction between the solder resist layer and the mask layer during solder reflow.