Abstract:
A process for fabricating an Integrated Circuit (IC) and the IC formed thereby is disclosed. The process comprises providing a substrate. The process further comprises forming a plurality of longitudinal trenches in the substrate and depositing a layer of a first conductive material on at least one longitudinal trench of the plurality of longitudinal trenches. A first layer of a second conductive material is deposited on the layer of the first conductive material. Thereafter, the process includes depositing a second layer of the second conductive material on the first layer of the second conductive material. The second layer of the second conductive material at least partially fills the at least one longitudinal trench. The first conductive material is selected such that a reduction potential of the first conductive material is less than a reduction potential of the second conductive material.
Abstract:
A substrate with an embedded stacked through-silicon via die is described. For example, an apparatus includes a first die and a second die. The second die has one or more through-silicon vias disposed therein (TSV die). The first die is electrically coupled to the TSV die through the one or more through-silicon vias. The apparatus also includes a coreless substrate. Both the first die and the TSV die are embedded in the coreless substrate.
Abstract:
A method of manufacturing a substrate for a microelectronic device comprises providing a dielectric material (120, 220, 920) as a build-up layer of the substrate, applying a primer (140, 240, 940) to a surface (121, 221, 921) of the dielectric material, and forming an electrically conductive layer (150, 250, 950) over the primer. In another embodiment, the method comprises providing the dielectric material, forming the feature extending into the dielectric material, forming the electrically conductive layer over the dielectric material, applying the primer to a surface of the electrically conductive layer and attaching a dielectric layer (960) to the primer.
Abstract:
Disclosed are a coreless substrate and a method of manufacturing the same. The coreless substrate includes a solder resist layer capable of being formed on each of on a first side and a second side of a metal panel. The solder resist layer includes at least one opening. A copper layer may be plated in the at least one opening such that a height of the copper layer exceeds a height of the solder resist layer. Further, at least one dielectric layer is deposited above the copper layer, and at least one microvia drilled in the dielectric layer. The at least one microvia enables an electrical connection between at least one of the first side and the second side of the metal panel and a lower surface of the coreless substrate.
Abstract:
A microelectronic device mounting substrate includes a bond pad with a side wall and an upper surface. A dielectric first layer is disposed on the mounting substrate and a solder mask second layer is disposed on the dielectric first layer. A uniform recess is disposed through the solder mask second layer and the dielectric first layer that exposes the portion of the bond pad upper surface.
Abstract:
The present disclosure relates to fabricating substrates for use in microelectronic device packages. In at least one embodiment, two substrate cores may be attached together during build-up layer formation on each substrate core to increase substrate fabrication throughput. The embodiments of the present disclosure may allow the processing of relatively thin substrates.
Abstract:
A technique to remove dry film resist residues during solder bump formation. A resist assembly is formed on a metal pad on a substrate. The resist assembly includes a solder resist (SR) layer, a poly-electrolyte multi-layer (PEMU), and a dry film resist (DFR). A SR opening is formed in the resist assembly. A solder bump is formed on the SR opening. The PEMU is removed.
Abstract:
A technique to remove dry film resist residues during solder bump formation. A resist assembly is formed on a metal pad on a substrate. The resist assembly includes a solder resist (SR) layer, a poly-electrolyte multi-layer (PEMU), and a dry film resist (DFR). A SR opening is formed in the resist assembly. A solder bump is formed on the SR opening. The PEMU is removed.
Abstract:
In some embodiments, an improved mechanical adhesion of copper metallization to dielectric with partially cured epoxy fillers is presented. In this regard, a substrate build-up film is introduced having epoxy material and a plurality of epoxy microspheres, wherein an interior of the microspheres is not fully cured. Other embodiments are also disclosed and claimed.
Abstract:
An apparatus includes a substrate having a land side having a plurality of contact pads and a die side opposite the land side. The apparatus includes a first die and a second die wherein the first die and second die are embedded within the substrate such that the second die is located between the first die and the land side of the substrate.