MAXIMIZING POTENTIAL GOOD DIE PER WAFER, PGDW

    公开(公告)号:US20170092636A1

    公开(公告)日:2017-03-30

    申请号:US14869416

    申请日:2015-09-29

    Applicant: NXP B.V.

    CPC classification number: G03F1/44 G03F9/7084 H01L22/30 H01L27/0203

    Abstract: Consistent with an example embodiment, there is a semiconductor wafer substrate comprising a plurality of integrated circuits formed in arrays of rows and columns on the wafer substrate. A plurality of integrated circuits are in arrays of rows and columns on the wafer substrate; the rows and the columns have a first width. First and second saw lanes separate the integrated circuits, the first saw lanes are arranged parallel and equidistant with one another in a first direction defined by rows, and the second saw lanes are arranged parallel and equidistant with one another in a second direction defined by the columns. A plurality of process modules (PM) are on the wafer substrate, the PM modules defined in an at least one additional row/column having a second width. The at least one additional row/column is parallel to the plurality of device die in one direction.

    FLEXIBLE WAFER-LEVEL CHIP-SCALE PACKAGES WITH IMPROVED BOARD-LEVEL RELIABILITY
    26.
    发明申请
    FLEXIBLE WAFER-LEVEL CHIP-SCALE PACKAGES WITH IMPROVED BOARD-LEVEL RELIABILITY 审中-公开
    具有改进的板级可靠性的灵活的水平流片尺寸包

    公开(公告)号:US20160005653A1

    公开(公告)日:2016-01-07

    申请号:US14322304

    申请日:2014-07-02

    Applicant: NXP B.V.

    Abstract: Consistent with an example embodiment, there is a method for manufacturing integrated circuit (IC) devices from a wafer substrate, the wafer substrate having a front-side surface with active devices and a back-side surface. A temporary covering to the front-side of the wafer substrate is applied. The back-side of the wafer substrate having a pre-grind thickness is ground to a post-grind thickness. To a predetermined thickness, the back-side of the wafer substrate is coated with a resilient coating. The wafer is mounted onto a second carrier tape on its back-side surface. After removing the temporary carrier tape from the front-side of the wafer substrate, the wafer is sawed along active device boundaries and active devices are singulated.

    Abstract translation: 与示例性实施例一致,存在从晶片衬底制造集成电路(IC)器件的方法,晶片衬底具有带有有源器件的前侧表面和后侧表面。 施加到晶片衬底的前侧的临时覆盖。 具有预研磨厚度的晶片基板的背面研磨成后研磨厚度。 对于预定的厚度,晶片基板的背面涂覆有弹性涂层。 将晶片安装在其背面上的第二载带上。 在从晶片基板的前侧移除临时载带之后,沿着有源器件边界锯切晶片,并且将有源器件分割。

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