公开(公告)号：US20150006097A1

公开(公告)日：2015-01-01

申请号：US14312568

申请日：2014-06-23

Applicant: KLA-Tencor Corporation

Inventor： Xiang Gao ,  Philip D. Flanner, III ,  Leonid Poslavsky ,  Ming Di ,  Qiang Zhao ,  Scott Penner

IPC: H01L21/66

CPC classification number: H01L22/12 ,  G01N21/211 ,  G01N2021/213 ,  H01L22/20

Abstract: Methods and systems of process control and yield management for semiconductor device manufacturing based on predictions of final device performance are presented herein. Estimated device performance metric values are calculated based on one or more device performance models that link parameter values capable of measurement during process to final device performance metrics. In some examples, an estimated value of a device performance metric is based on at least one structural characteristic and at least one band structure characteristic of an unfinished, multi-layer wafer. In some examples, a prediction of whether a device under process will fail a final device performance test is based on the difference between an estimated value of a final device performance metric and a specified value. In some examples, an adjustment in one or more subsequent process steps is determined based at least in part on the difference.

Abstract translation: 本文介绍了基于最终设备性能预测的半导体器件制造过程控制和产量管理的方法和系统。 估计的设备性能指标值是根据一个或多个设备性能模型计算的，该模型将过程中能够测量的参数值链接到最终设备性能指标。 在一些示例中，器件性能度量的估计值基于未完成的多层晶片的至少一个结构特征和至少一个带结构特征。 在一些示例中，对正在处理的设备是否将在最终设备性能测试中失败的预测是基于最终设备性能度量的估计值与指定值之间的差异。 在一些示例中，至少部分地基于差异来确定一个或多个后续处理步骤中的调整。

公开(公告)号：US20130132021A1

公开(公告)日：2013-05-23

申请号：US13680273

申请日：2012-11-19

Applicant: KLA-Tencor Corporation

Inventor： Hidong Kwak ,  Zhiming Jiang ,  Ward RDell Dixon ,  Kenneth Edward James, JR. ,  Leonid Poslavsky ,  Torsten Kaack

IPC: G01N21/27

CPC classification number: G01N21/274 ,  G01N21/211 ,  G03F7/70608

Abstract: Methods and systems for calibrating system parameter values of a target inspection system are presented. Spectral Error Based Calibration (SEBC) increases consistency among inspection systems by minimizing differences in the spectral error among different inspection systems for a given specimen or set of specimens. The system parameter values are determined such that differences between a spectral error associated with a measurement of a specimen by the target inspection system and a spectral error associated with a measurement of the same specimen by a reference inspection system are minimized. In some examples, system parameter values are calibrated without modifying specimen parameters. Small inaccuracies in specimen parameter values have little effect on the calibration because the target system and the reference system both measure the same specimen or set of specimens. By performing SEBC over a set of specimens, the resulting calibration is robust to a wide range of specimens under test.

Abstract translation: 介绍了目标检测系统校准系统参数值的方法和系统。 基于光谱误差的校准（SEBC）通过最小化给定样品或一组样品的不同检查系统之间的光谱误差的差异来提高检测系统之间的一致性。 确定系统参数值，使得由目标检查系统与样本的测量相关联的光谱误差与由参考检查系统对相同样本的测量相关联的光谱误差之间的差异最小化。 在一些示例中，系统参数值在不修改样本参数的情况下进行校准。 样本参数值的小的不准确性对校准几乎没有影响，因为目标系统和参考系统都测量相同的样本或一组样本。 通过在一组样品上执行SEBC，所得到的校准对于广泛的被测样品是稳健的。

公开(公告)号：US10386729B2

公开(公告)日：2019-08-20

申请号：US14293221

申请日：2014-06-02

Applicant: KLA-Tencor Corporation

Inventor： Lie-Quan Lee ,  Leonid Poslavsky ,  Stilian Ivanov Pandev

IPC: G03F1/44 ,  G01N21/25 ,  G03F7/20

Abstract: Dynamic removal of correlation of highly-correlated parameters for optical metrology is described. An embodiment of a method includes determining a model of a structure, the model including a set of parameters; performing optical metrology measurement of the structure, including collecting spectra data on a hardware element; during the measurement of the structure, dynamically removing correlation of two or more parameters of the set of parameters, an iteration of the dynamic removal of correlation including: generating a Jacobian matrix of the set of parameters, applying a singular value decomposition of the Jacobian matrix, selecting a subset of the set of parameters, and computing a direction of the parameter search based on the subset of parameters. If the model does not converge, performing one or more additional iterations of the dynamic removal of correlation until the model converges; and if the model does converge, reporting the results of the measurement.

公开(公告)号：US09857291B2

公开(公告)日：2018-01-02

申请号：US14277898

申请日：2014-05-15

Applicant: KLA-Tencor Corporation

Inventor： Hidong Kwak ,  John Lesoine ,  Malik Sadiq ,  Lanhua Wei ,  Shankar Krishnan ,  Leonid Poslavsky ,  Mikhail M. Sushchik

IPC: G01N21/21 ,  G01N21/95 ,  G01N21/27

CPC classification number: G01N21/211 ,  G01B2210/56 ,  G01N21/274 ,  G01N21/9501 ,  G01N2021/213

Abstract: Methods and systems for matching measurement spectra across one or more optical metrology systems are presented. The values of one or more system parameters used to determine the spectral response of a specimen to a measurement performed by a target metrology system are optimized. The system parameter values are optimized such that differences between measurement spectra generated by a reference system and the target system are minimized for measurements of the same metrology targets. Methods and systems for matching spectral errors across one or more optical metrology systems are also presented. A trusted metrology system measures the value of at least one specimen parameter to minimize model errors introduced by differing measurement conditions present at the time of measurement by the reference and target metrology systems. Methods and systems for parameter optimization based on low-order response surfaces are presented to reduce the compute time required to refine system calibration parameters.

公开(公告)号：US09719932B1

公开(公告)日：2017-08-01

申请号：US14532971

申请日：2014-11-04

Applicant: KLA-Tencor Corporation

Inventor： Derrick Shaughnessy ,  Michael S. Bakeman ,  Guorong V. Zhuang ,  Andrei V. Shchegrov ,  Leonid Poslavsky

IPC: G01N21/00 ,  G01N21/67 ,  G01N21/95 ,  H01S3/0915

CPC classification number: G01N21/9501 ,  G01N2201/061 ,  G03F7/70616 ,  H01L22/12

Abstract: Methods and systems are described herein for producing high radiance illumination light for use in semiconductor metrology based on a confined, sustained plasma. One or more plasma confining circuits introduce an electric field, a magnetic field, or a combination thereof to spatially confine a sustained plasma. The confinement of the sustained plasma decreases the size of the induced plasma resulting in increased radiance. In addition, plasma confinement may be utilized to shape the plasma to improve light collection and imaging onto the specimen. The induced fields may be static or dynamic. In some embodiments, additional energy is coupled into the confined, sustained plasma to further increase radiance. In some embodiments, the pump energy source employed to sustained the plasma is modulated in combination with the plasma confining circuit to reduce plasma emission noise.

公开(公告)号：US09553033B2

公开(公告)日：2017-01-24

申请号：US14594917

申请日：2015-01-12

Applicant: KLA-Tencor Corporation

Inventor： Jonathan Iloreta ,  Matthew A. Laffin ,  Leonid Poslavsky ,  Torsten Kaack ,  Qiang Zhao ,  Lie-Quan Lee

IPC: G06F17/50 ,  H01L21/66

CPC classification number: H01L22/12

Abstract: Methods and tools for generating measurement models of complex device structures based on re-useable, parametric models are presented. Metrology systems employing these models are configured to measure structural and material characteristics associated with different semiconductor fabrication processes. The re-useable, parametric sub-structure model is fully defined by a set of independent parameters entered by a user of the model building tool. All other variables associated with the model shape and internal constraints among constituent geometric elements are pre-defined within the model. In some embodiments, one or more re-useable, parametric models are integrated into a measurement model of a complex semiconductor device. In another aspect, a model building tool generates a re-useable, parametric sub-structure model based on input from a user. The resulting models can be exported to a file that can be used by others and may include security features to control the sharing of sensitive intellectual property with particular users.

Abstract translation: 提出了基于可重复使用的参数模型生成复杂设备结构测量模型的方法和工具。 采用这些模型的计量系统被配置为测量与不同半导体制造工艺相关联的结构和材料特性。 可重复使用的参数子结构模型由模型构建工具的用户输入的一组独立参数完全定义。 与模型形状相关联的所有其他变量和组成几何元素之间的内部约束在模型中被预先定义。 在一些实施例中，将一个或多个可重复使用的参数模型集成到复合半导体器件的测量模型中。 在另一方面，模型构建工具基于来自用户的输入生成可重复使用的参数子结构模型。 所得到的模型可以导出到其他人可以使用的文件，并且可能包括用于控制与特定用户共享敏感知识产权的安全功能。

公开(公告)号：US20160322267A1

公开(公告)日：2016-11-03

申请号：US15204461

申请日：2016-07-07

Applicant: KLA-Tencor Corporation

Inventor： In-Kyo Kim ,  Xin Li ,  Leonid Poslavsky ,  Liequan Lee ,  Meng Cao ,  Sungchul Yoo ,  Andrei V. Shchegrov ,  Sangbong Park

IPC: H01L21/66 ,  G06F17/50 ,  G03F7/20 ,  H01L21/67

CPC classification number: H01L22/20 ,  G03F7/70616 ,  G03F7/70625 ,  G06F17/5068 ,  H01L21/67288 ,  H01L22/12

Abstract: Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of models having varying combinations of floating and fixed critical parameters and corresponding simulated spectra is generated. Each model is generated to determine one or more critical parameters for unknown structures based on spectra collected from such unknown structures. It is determined which one of the models best correlates with each critical parameter based on reference data that includes a plurality of known values for each of a plurality of critical parameters and corresponding known spectra. For spectra obtained from an unknown structure using a metrology tool, different ones of the models are selected and used to determine different ones of the critical parameters of the unknown structure based on determining which one of the models best correlates with each critical parameter based on the reference data.

公开(公告)号：US20160320315A1

公开(公告)日：2016-11-03

申请号：US14826079

申请日：2015-08-13

Applicant: KLA-Tencor Corporation

Inventor： Liequan Lee ,  Raphael Jean Michel Marie Getin ,  Meng Cao ,  Leonid Poslavsky ,  Torsten Rudolf Kaack ,  Hong Qiu

IPC: G01N21/95 ,  G01B11/02

CPC classification number: G01B11/02 ,  G03F7/70625 ,  G06N5/02

Abstract: A metrology system, method, and computer program product that employ automatic transitioning between utilizing a library and utilizing regression for measurement processing are provided. In use, it is determined, by the metrology system, that a predetermined condition has been met. In response to determining that the predetermined condition has been met, the metrology system automatically transitions between utilizing a library and utilizing regression for measurement processing.

Abstract translation: 提供了一种使用库之间自动转换并利用回归进行测量处理的计量系统，方法和计算机程序产品。 在使用中，由计量系统确定满足预定条件。 响应于确定已经满足预定条件，计量系统在利用库和利用用于测量处理的回归之间自动转换。

公开(公告)号：US20160290796A1

公开(公告)日：2016-10-06

申请号：US15090389

申请日：2016-04-04

Applicant: KLA-Tencor Corporation

Inventor： Ady Levy ,  Daniel Kandel ,  Michael E. Adel ,  Leonid Poslavsky ,  John Robinson ,  Tal Marciano ,  Barak Bringoltz ,  Tzahi Grunzweig ,  Dana Klein ,  Tal Itzkovich ,  Nadav Carmel ,  Nuriel Amir ,  Vidya Ramanathan ,  Janay Camp ,  Mark Wagner

IPC: G01B11/27 ,  G01N21/21

CPC classification number: G01B11/272 ,  G01N21/211 ,  G01N21/31 ,  G01N21/41 ,  G01N21/4738 ,  G01N21/4788 ,  G01N21/6489 ,  G01N21/9501 ,  G01N2021/213 ,  G03F7/705 ,  G03F7/70525 ,  G03F7/70533 ,  G03F7/70616

Abstract: A metrology performance analysis system includes a metrology tool including one or more detectors and a controller communicatively coupled to the one or more detectors. The controller is configured to receive one or more metrology data sets associated with a metrology target from the metrology tool in which the one or more metrology data sets include one or more measured metrology metrics and the one or more measured metrology metrics indicate deviations from nominal values. The controller is further configured to determine relationships between the deviations from the nominal values and one or more selected semiconductor process variations, and determine one or more root causes of the deviations from the nominal values based on the relationships between values of the one or more metrology metrics and the one or more selected semiconductor process variations.

Abstract translation: 计量性能分析系统包括包括一个或多个检测器的计量工具和通信地耦合到所述一个或多个检测器的控制器。 所述控制器被配置为从所述计量工具接收与度量目标相关联的一个或多个度量数据集，其中所述一个或多个测量数据集包括一个或多个测量的度量度量，并且所述一个或多个测量的度量度量指示与标称值的偏差 。 控制器还被配置为确定与标称值和一个或多个所选择的半导体工艺变化的偏差之间的关系，并且基于一个或多个测量值的值之间的关系确定偏离标称值的一个或多个根本原因 度量和一个或多个所选择的半导体工艺变化。

公开(公告)号：US20130116978A1

公开(公告)日：2013-05-09

申请号：US13665436

申请日：2012-10-31

Applicant: KLA-TENCOR CORPORATION

Inventor： Sungchul Yoo ,  Andrei V. Shchegrov ,  Thaddeus G. Dziura ,  InKyo Kim ,  SeungHwan Lee ,  ByeoungSu Hwang ,  Leonid Poslavsky

IPC: G06F17/50 ,  G06F17/10

CPC classification number: G06F17/50 ,  G01N21/47 ,  G01N21/956 ,  G03F7/70625 ,  G03F7/70683 ,  G06F17/10 ,  G06F17/40 ,  G06F19/00

Abstract: The disclosure is directed to improving optical metrology for a sample with complex structural attributes utilizing custom designed secondary targets. At least one parameter of a secondary target may be controlled to improve sensitivity for a selected parameter of a primary target and/or to reduce correlation of the selected parameter with other parameters of the primary target. Parameters for the primary and secondary target may be collected. The parameters may be incorporated into scatterometry model. Simulations utilizing the scatterometry model may be conducted to determine a level of sensitivity or a level of correlation for the selected parameter of the primary target. The controlled parameter of the secondary target may be modified until a selected level of sensitivity or a selected level of correlation is achieved.

Abstract translation: 本公开旨在改进具有利用定制设计的次要目标的具有复杂结构属性的样本的光学计量学。 可以控制辅助目标的至少一个参数以提高对主要目标的选定参数的灵敏度和/或减少所选参数与主要目标的其他参数的相关性。 可以收集主要和次要目标的参数。 这些参数可以并入散射测量模型中。 可以进行利用散射测量模型的模拟来确定主要目标的选定参数的灵敏度水平或相关程度。 可以修改辅助目标的受控参数，直到达到所选择的灵敏度水平或所选择的相关水平。