公开(公告)号：US20130132021A1

公开(公告)日：2013-05-23

申请号：US13680273

申请日：2012-11-19

Applicant: KLA-Tencor Corporation

Inventor： Hidong Kwak ,  Zhiming Jiang ,  Ward RDell Dixon ,  Kenneth Edward James, JR. ,  Leonid Poslavsky ,  Torsten Kaack

IPC: G01N21/27

CPC classification number: G01N21/274 ,  G01N21/211 ,  G03F7/70608

Abstract: Methods and systems for calibrating system parameter values of a target inspection system are presented. Spectral Error Based Calibration (SEBC) increases consistency among inspection systems by minimizing differences in the spectral error among different inspection systems for a given specimen or set of specimens. The system parameter values are determined such that differences between a spectral error associated with a measurement of a specimen by the target inspection system and a spectral error associated with a measurement of the same specimen by a reference inspection system are minimized. In some examples, system parameter values are calibrated without modifying specimen parameters. Small inaccuracies in specimen parameter values have little effect on the calibration because the target system and the reference system both measure the same specimen or set of specimens. By performing SEBC over a set of specimens, the resulting calibration is robust to a wide range of specimens under test.

Abstract translation: 介绍了目标检测系统校准系统参数值的方法和系统。 基于光谱误差的校准（SEBC）通过最小化给定样品或一组样品的不同检查系统之间的光谱误差的差异来提高检测系统之间的一致性。 确定系统参数值，使得由目标检查系统与样本的测量相关联的光谱误差与由参考检查系统对相同样本的测量相关联的光谱误差之间的差异最小化。 在一些示例中，系统参数值在不修改样本参数的情况下进行校准。 样本参数值的小的不准确性对校准几乎没有影响，因为目标系统和参考系统都测量相同的样本或一组样本。 通过在一组样品上执行SEBC，所得到的校准对于广泛的被测样品是稳健的。

公开(公告)号：US10088413B2

公开(公告)日：2018-10-02

申请号：US13680273

申请日：2012-11-19

Applicant: KLA-Tencor Corporation

Inventor： Hidong Kwak ,  Zhiming Jiang ,  Ward RDell Dixon ,  Kenneth Edward James, Jr. ,  Leonid Poslavsky ,  Torsten Kaack

IPC: G01N21/27 ,  G03F7/20 ,  G01N21/21

Abstract: Methods and systems for calibrating system parameter values of a target inspection system are presented. Spectral Error Based Calibration (SEBC) increases consistency among inspection systems by minimizing differences in the spectral error among different inspection systems for a given specimen or set of specimens. The system parameter values are determined such that differences between a spectral error associated with a measurement of a specimen by the target inspection system and a spectral error associated with a measurement of the same specimen by a reference inspection system are minimized. In some examples, system parameter values are calibrated without modifying specimen parameters. Small inaccuracies in specimen parameter values have little effect on the calibration because the target system and the reference system both measure the same specimen or set of specimens. By performing SEBC over a set of specimens, the resulting calibration is robust to a wide range of specimens under test.

公开(公告)号：US08711349B2

公开(公告)日：2014-04-29

申请号：US13626023

申请日：2012-09-25

Applicant: KLA-Tencor Corporation

Inventor： Xiang Gao ,  Philip D. Flanner, III ,  Leonid Poslavsky ,  Zhiming Jiang ,  Jun-Jie Ye ,  Torsten Kaack ,  Qiang Zhao

IPC: G01N21/95

CPC classification number: G01N21/9501 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/8851 ,  H01L22/12

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.

Abstract translation: 提出了基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高产量光谱仪用于在制造过程早期快速测量半导体晶圆。 基于光谱数据确定光色散度量。 基于光学色散度量值来确定带隙，带边缘和缺陷之类的带结构特性。 在一些实施例中，通过曲线拟合和色散度量值的插值来确定带结构特征。 在一些其它实施例中，通过所选色散模型的回归来确定带结构特征。 在一些实例中，还确定了指示高k电介质膜的带宽变宽的带结构特性。 基于在制造过程早期确定的带结构特性来估计成品晶圆的电性能。

公开(公告)号：US20130083320A1

公开(公告)日：2013-04-04

申请号：US13626023

申请日：2012-09-25

Applicant: KLA-TENCOR CORPORATION

Inventor： Xiang Gao ,  Philip D. Flanner, III ,  Leonid Poslavsky ,  Zhiming Jiang ,  Jun-Jie (Julien) Ye ,  Torsten Kaack ,  Qiang Zhao

IPC: G01N21/95

CPC classification number: G01N21/9501 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/8851 ,  H01L22/12

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.

Abstract translation: 提出了基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高产量光谱仪用于在制造过程早期快速测量半导体晶圆。 基于光谱数据确定光色散度量。 基于光学色散度量值来确定带隙，带边缘和缺陷之类的带结构特性。 在一些实施例中，通过曲线拟合和色散度量值的插值来确定带结构特征。 在一些其它实施例中，通过所选色散模型的回归来确定带结构特征。 在一些实例中，还确定了指示高k电介质膜的带宽变宽的带结构特性。 基于在制造过程早期确定的带结构特性来估计成品晶圆的电性能。