公开(公告)号：US08711349B2

公开(公告)日：2014-04-29

申请号：US13626023

申请日：2012-09-25

Applicant: KLA-Tencor Corporation

Inventor： Xiang Gao ,  Philip D. Flanner, III ,  Leonid Poslavsky ,  Zhiming Jiang ,  Jun-Jie Ye ,  Torsten Kaack ,  Qiang Zhao

IPC: G01N21/95

CPC classification number: G01N21/9501 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/8851 ,  H01L22/12

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical dispersion metrics are determined based on the spectral data. Band structure characteristics such as band gap, band edge, and defects are determined based on optical dispersion metric values. In some embodiments a band structure characteristic is determined by curve fitting and interpolation of dispersion metric values. In some other embodiments, band structure characteristics are determined by regression of a selected dispersion model. In some examples, band structure characteristics indicative of band broadening of high-k dielectric films are also determined. The electrical performance of finished wafers is estimated based on the band structure characteristics identified early in the manufacturing process.

Abstract translation: 提出了基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高产量光谱仪用于在制造过程早期快速测量半导体晶圆。 基于光谱数据确定光色散度量。 基于光学色散度量值来确定带隙，带边缘和缺陷之类的带结构特性。 在一些实施例中，通过曲线拟合和色散度量值的插值来确定带结构特征。 在一些其它实施例中，通过所选色散模型的回归来确定带结构特征。 在一些实例中，还确定了指示高k电介质膜的带宽变宽的带结构特性。 基于在制造过程早期确定的带结构特性来估计成品晶圆的电性能。