公开(公告)号：US10079183B2

公开(公告)日：2018-09-18

申请号：US14312568

申请日：2014-06-23

Applicant: KLA-Tencor Corporation

Inventor： Xiang Gao ,  Philip D. Flanner, III ,  Leonid Poslavsky ,  Ming Di ,  Qiang Zhao ,  Scott Penner

IPC: G01N21/21 ,  H01L21/66

CPC classification number: H01L22/12 ,  G01N21/211 ,  G01N2021/213 ,  H01L22/20

Abstract: Methods and systems of process control and yield management for semiconductor device manufacturing based on predictions of final device performance are presented herein. Estimated device performance metric values are calculated based on one or more device performance models that link parameter values capable of measurement during process to final device performance metrics. In some examples, an estimated value of a device performance metric is based on at least one structural characteristic and at least one band structure characteristic of an unfinished, multi-layer wafer. In some examples, a prediction of whether a device under process will fail a final device performance test is based on the difference between an estimated value of a final device performance metric and a specified value. In some examples, an adjustment in one or more subsequent process steps is determined based at least in part on the difference.

公开(公告)号：US20150006097A1

公开(公告)日：2015-01-01

申请号：US14312568

申请日：2014-06-23

Applicant: KLA-Tencor Corporation

Inventor： Xiang Gao ,  Philip D. Flanner, III ,  Leonid Poslavsky ,  Ming Di ,  Qiang Zhao ,  Scott Penner

IPC: H01L21/66

CPC classification number: H01L22/12 ,  G01N21/211 ,  G01N2021/213 ,  H01L22/20

Abstract: Methods and systems of process control and yield management for semiconductor device manufacturing based on predictions of final device performance are presented herein. Estimated device performance metric values are calculated based on one or more device performance models that link parameter values capable of measurement during process to final device performance metrics. In some examples, an estimated value of a device performance metric is based on at least one structural characteristic and at least one band structure characteristic of an unfinished, multi-layer wafer. In some examples, a prediction of whether a device under process will fail a final device performance test is based on the difference between an estimated value of a final device performance metric and a specified value. In some examples, an adjustment in one or more subsequent process steps is determined based at least in part on the difference.

Abstract translation: 本文介绍了基于最终设备性能预测的半导体器件制造过程控制和产量管理的方法和系统。 估计的设备性能指标值是根据一个或多个设备性能模型计算的，该模型将过程中能够测量的参数值链接到最终设备性能指标。 在一些示例中，器件性能度量的估计值基于未完成的多层晶片的至少一个结构特征和至少一个带结构特征。 在一些示例中，对正在处理的设备是否将在最终设备性能测试中失败的预测是基于最终设备性能度量的估计值与指定值之间的差异。 在一些示例中，至少部分地基于差异来确定一个或多个后续处理步骤中的调整。