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    Calculated electrical performance metrics for process monitoring and yield management
    1.
    发明授权
    Calculated electrical performance metrics for process monitoring and yield management 有权

    公开(公告)号：US10079183B2

    公开(公告)日：2018-09-18

    申请号：US14312568

    申请日：2014-06-23

    Applicant: KLA-Tencor Corporation

    Inventor： Xiang Gao ,  Philip D. Flanner, III ,  Leonid Poslavsky ,  Ming Di ,  Qiang Zhao ,  Scott Penner

    IPC: G01N21/21 ,  H01L21/66

    CPC classification number: H01L22/12 ,  G01N21/211 ,  G01N2021/213 ,  H01L22/20

    Abstract: Methods and systems of process control and yield management for semiconductor device manufacturing based on predictions of final device performance are presented herein. Estimated device performance metric values are calculated based on one or more device performance models that link parameter values capable of measurement during process to final device performance metrics. In some examples, an estimated value of a device performance metric is based on at least one structural characteristic and at least one band structure characteristic of an unfinished, multi-layer wafer. In some examples, a prediction of whether a device under process will fail a final device performance test is based on the difference between an estimated value of a final device performance metric and a specified value. In some examples, an adjustment in one or more subsequent process steps is determined based at least in part on the difference.

    Dispersion model for band gap tracking
    2.
    发明授权
    Dispersion model for band gap tracking 有权
    带隙跟踪的色散模型

    公开(公告)号：US09595481B1

    公开(公告)日：2017-03-14

    申请号：US14464640

    申请日：2014-08-20

    Applicant: KLA-Tencor Corporation

    Inventor： Natalia Malkova ,  Leonid Poslavsky ,  Ming Di ,  Qiang Zhao ,  Dawei Hu

    IPC: H01L21/66 ,  G01R31/26 ,  G01N21/95

    CPC classification number: H01L22/12 ,  G01N21/211 ,  G01N21/8422 ,  G01N21/9501 ,  G01N2021/8438 ,  G01N2021/95676 ,  G01R31/2601

    Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

    Abstract translation: 提出了基于光谱响应数据确定沉积在衬底上的高k电介质膜的带结构特性的方法和系统。 高产量光谱仪用于在制造过程早期快速测量半导体晶圆。 提出了能够精确表征高K电介质层和嵌入式纳米结构中的缺陷的半导体结构的光学模型。 在一个示例中，光学分散模型包括具有对未完成的多层半导体晶片的层的带隙敏感的连续第一导数的连续Cody-Lorentz模型。 这些模型以物理上有意义的方式快速准确地表示实验结果。 模型参数值可以随后用于获得对制造过程的洞察和控制。

    Calculated Electrical Performance Metrics For Process Monitoring And Yield Management
    3.
    发明申请
    Calculated Electrical Performance Metrics For Process Monitoring And Yield Management 审中-公开
    用于过程监控和产量管理的计算电气性能指标

    公开(公告)号：US20150006097A1

    公开(公告)日：2015-01-01

    申请号：US14312568

    申请日：2014-06-23

    Applicant: KLA-Tencor Corporation

    Inventor： Xiang Gao ,  Philip D. Flanner, III ,  Leonid Poslavsky ,  Ming Di ,  Qiang Zhao ,  Scott Penner

    IPC: H01L21/66

    CPC classification number: H01L22/12 ,  G01N21/211 ,  G01N2021/213 ,  H01L22/20

    Abstract: Methods and systems of process control and yield management for semiconductor device manufacturing based on predictions of final device performance are presented herein. Estimated device performance metric values are calculated based on one or more device performance models that link parameter values capable of measurement during process to final device performance metrics. In some examples, an estimated value of a device performance metric is based on at least one structural characteristic and at least one band structure characteristic of an unfinished, multi-layer wafer. In some examples, a prediction of whether a device under process will fail a final device performance test is based on the difference between an estimated value of a final device performance metric and a specified value. In some examples, an adjustment in one or more subsequent process steps is determined based at least in part on the difference.

    Abstract translation: 本文介绍了基于最终设备性能预测的半导体器件制造过程控制和产量管理的方法和系统。 估计的设备性能指标值是根据一个或多个设备性能模型计算的，该模型将过程中能够测量的参数值链接到最终设备性能指标。 在一些示例中，器件性能度量的估计值基于未完成的多层晶片的至少一个结构特征和至少一个带结构特征。 在一些示例中，对正在处理的设备是否将在最终设备性能测试中失败的预测是基于最终设备性能度量的估计值与指定值之间的差异。 在一些示例中，至少部分地基于差异来确定一个或多个后续处理步骤中的调整。

    Dispersion model for band gap tracking
    4.
    发明授权
    Dispersion model for band gap tracking 有权

    公开(公告)号：US10410935B1

    公开(公告)日：2019-09-10

    申请号：US15428835

    申请日：2017-02-09

    Applicant: KLA-Tencor Corporation

    Inventor： Natalia Malkova ,  Leonid Poslavsky ,  Ming Di ,  Qiang Zhao ,  Dawei Hu

    IPC: H01L21/66 ,  G01N21/27 ,  G01R31/28 ,  G01R31/308

    Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

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