知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

8 records (took 0.013 seconds)

    Measurement library optimization in semiconductor metrology
    1.
    发明授权
    Measurement library optimization in semiconductor metrology 有权

    公开(公告)号：US10732520B1

    公开(公告)日：2020-08-04

    申请号：US16417085

    申请日：2019-05-20

    Applicant: KLA-Tencor Corporation

    Inventor： Meng Cao ,  Lie-Quan Lee ,  Qiang Zhao ,  Heyin Li ,  Mengmeng Ye

    IPC: G06F9/00 ,  G03F9/00

    Abstract: Methods and systems for optimizing a set of measurement library control parameters for a particular metrology application are presented herein. Measurement signals are collected from one or more metrology targets by a target measurement system. Values of user selected parameters of interest are resolved by fitting a pre-computed measurement library function to the measurement signals for a given set of library control parameters. Values of one or more library control parameters are optimized such that differences between the values of the parameters of interest estimated by the library based measurement and reference values associated with trusted measurements of the parameters of interest are minimized. The optimization of the library control parameter values is performed without recalculating the pre-computed measurement library. Subsequent library based measurements are performed by the target measurement system using the optimized set of measurement library control parameters with improved measurement performance.

    Multi-model metrology
    3.
    发明授权
    Multi-model metrology 有权
    多模式计量

    公开(公告)号：US09412673B2

    公开(公告)日：2016-08-09

    申请号：US14459516

    申请日：2014-08-14

    Applicant: KLA-Tencor Corporation

    Inventor： In-Kyo Kim ,  Xin Li ,  Leonid Poslavsky ,  Liequan Lee ,  Meng Cao ,  Sungchul Yoo ,  Andrei V. Shchegrov ,  Sangbong Park

    IPC: G06F17/50 ,  H01L21/66 ,  G03F7/20

    CPC classification number: H01L22/20 ,  G03F7/70616 ,  G03F7/70625 ,  G06F17/5068 ,  H01L21/67288 ,  H01L22/12

    Abstract: Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of models having varying combinations of floating and fixed critical parameters and corresponding simulated spectra is generated. Each model is generated to determine one or more critical parameters for unknown structures based on spectra collected from such unknown structures. It is determined which one of the models best correlates with each critical parameter based on reference data that includes a plurality of known values for each of a plurality of critical parameters and corresponding known spectra. For spectra obtained from an unknown structure using a metrology tool, different ones of the models are selected and used to determine different ones of the critical parameters of the unknown structure based on determining which one of the models best correlates with each critical parameter based on the reference data.

    Abstract translation: 公开了用于在半导体晶片上表征感兴趣的多个结构的装置和方法。 产生具有浮动和固定关键参数和对应的模拟光谱的变化组合的多个模型。 生成每个模型以基于从这样的未知结构收集的光谱来确定未知结构的一个或多个关键参数。 基于包括多个关键参数和相应的已知光谱中的每一个的多个已知值的参考数据，确定哪一个模型与每个关键参数最佳相关。 对于使用计量工具从未知结构获得的光谱，选择不同的模型并且用于基于确定哪一个模型与每个关键参数最相关的来确定未知结构的关键参数的不同的参数 参考数据。

    MULTI-MODEL METROLOGY
    4.
    发明申请
    MULTI-MODEL METROLOGY 有权
    多模式计量学

    公开(公告)号：US20150058813A1

    公开(公告)日：2015-02-26

    申请号：US14459516

    申请日：2014-08-14

    Applicant: KLA-Tencor Corporation

    Inventor： In-Kyo Kim ,  Xin Li ,  Leonid Poslavsky ,  Liequan Lee ,  Meng Cao ,  Sungchul Yoo ,  Andrei V. Shchegrov ,  Sangbong Park

    IPC: G06F17/50

    CPC classification number: H01L22/20 ,  G03F7/70616 ,  G03F7/70625 ,  G06F17/5068 ,  H01L21/67288 ,  H01L22/12

    Abstract: Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of models having varying combinations of floating and fixed critical parameters and corresponding simulated spectra is generated. Each model is generated to determine one or more critical parameters for unknown structures based on spectra collected from such unknown structures. It is determined which one of the models best correlates with each critical parameter based on reference data that includes a plurality of known values for each of a plurality of critical parameters and corresponding known spectra. For spectra obtained from an unknown structure using a metrology tool, different ones of the models are selected and used to determine different ones of the critical parameters of the unknown structure based on determining which one of the models best correlates with each critical parameter based on the reference data.

    Abstract translation: 公开了用于在半导体晶片上表征感兴趣的多个结构的装置和方法。 产生具有浮动和固定关键参数和对应的模拟光谱的变化组合的多个模型。 生成每个模型以基于从这样的未知结构收集的光谱来确定未知结构的一个或多个关键参数。 基于包括多个关键参数和相应的已知光谱中的每一个的多个已知值的参考数据，确定哪一个模型与每个关键参数最佳相关。 对于使用计量工具从未知结构获得的光谱，选择不同的模型并且用于基于确定哪一个模型与每个关键参数最相关的来确定未知结构的关键参数的不同的参数 参考数据。

    Measurement library optimization in semiconductor metrology
    5.
    发明授权
    Measurement library optimization in semiconductor metrology 有权

    公开(公告)号：US10345721B1

    公开(公告)日：2019-07-09

    申请号：US15184782

    申请日：2016-06-16

    Applicant: KLA-Tencor Corporation

    Inventor： Meng Cao ,  Lie-Quan Lee ,  Qiang Zhao ,  Heyin Li ,  Mengmeng Ye

    IPC: G03F9/00

    Abstract: Methods and systems for optimizing a set of measurement library control parameters for a particular metrology application are presented herein. Measurement signals are collected from one or more metrology targets by a target measurement system. Values of user selected parameters of interest are resolved by fitting a pre-computed measurement library function to the measurement signals for a given set of library control parameters. Values of one or more library control parameters are optimized such that differences between the values of the parameters of interest estimated by the library based measurement and reference values associated with trusted measurements of the parameters of interest are minimized. The optimization of the library control parameter values is performed without recalculating the pre-computed measurement library. Subsequent library based measurements are performed by the target measurement system using the optimized set of measurement library control parameters with improved measurement performance.

    Automated Metrology System Selection
    6.
    发明申请
    Automated Metrology System Selection 审中-公开
    自动计量系统选择

    公开(公告)号：US20170023491A1

    公开(公告)日：2017-01-26

    申请号：US15166897

    申请日：2016-05-27

    Applicant: KLA-Tencor Corporation

    Inventor： Meng Cao ,  Lie-Quan Lee ,  Qiang Zhao ,  Heyin Li ,  Mengmeng Ye

    IPC: G01N21/95

    CPC classification number: G01N21/9501 ,  G01B21/04 ,  G01B2210/56 ,  G01N21/211 ,  G01N2021/213 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70633

    Abstract: Methods and systems for evaluating and ranking the measurement efficacy of multiple sets of measurement system combinations and recipes for a particular metrology application are presented herein. Measurement efficacy is based on estimates of measurement precision, measurement accuracy, correlation to a reference measurement, measurement time, or any combination thereof. The automated the selection of measurement system combinations and recipes reduces time to measurement and improves measurement results. Measurement efficacy is quantified by a set of measurement performance metrics associated with each measurement system and recipe. In one example, the sets of measurement system combinations and recipes most capable of measuring the desired parameter of interest are presented to the user in rank order based on corresponding values of one or more measurement performance metrics. A user is able to select the appropriate measurement system combination in an objective, quantitative manner.

    Abstract translation: 本文介绍了用于评估和评估特定测量应用的多组测量系统组合和配方的测量功能的方法和系统。 测量功效基于测量精度，测量精度，与参考测量的相关性，测量时间或其任何组合的估计。 自动化测量系统组合和配方的选择减少了测量时间并提高了测量结果。 通过与每个测量系统和配方相关联的一组测量性能指标量化测量功效。 在一个示例中，基于一个或多个测量性能度量的对应值，以等级顺序向用户呈现最能测量所需感兴趣参数的测量系统组合和配方的集合。 用户能够以客观，定量的方式选择合适的测量系统组合。

    MULTI-MODEL METROLOGY
    7.
    发明申请
    MULTI-MODEL METROLOGY 审中-公开

    公开(公告)号：US20160322267A1

    公开(公告)日：2016-11-03

    申请号：US15204461

    申请日：2016-07-07

    Applicant: KLA-Tencor Corporation

    Inventor： In-Kyo Kim ,  Xin Li ,  Leonid Poslavsky ,  Liequan Lee ,  Meng Cao ,  Sungchul Yoo ,  Andrei V. Shchegrov ,  Sangbong Park

    IPC: H01L21/66 ,  G06F17/50 ,  G03F7/20 ,  H01L21/67

    CPC classification number: H01L22/20 ,  G03F7/70616 ,  G03F7/70625 ,  G06F17/5068 ,  H01L21/67288 ,  H01L22/12

    Abstract: Disclosed are apparatus and methods for characterizing a plurality of structures of interest on a semiconductor wafer. A plurality of models having varying combinations of floating and fixed critical parameters and corresponding simulated spectra is generated. Each model is generated to determine one or more critical parameters for unknown structures based on spectra collected from such unknown structures. It is determined which one of the models best correlates with each critical parameter based on reference data that includes a plurality of known values for each of a plurality of critical parameters and corresponding known spectra. For spectra obtained from an unknown structure using a metrology tool, different ones of the models are selected and used to determine different ones of the critical parameters of the unknown structure based on determining which one of the models best correlates with each critical parameter based on the reference data.

Patent Agency Ranking