公开(公告)号：US11720031B2

公开(公告)日：2023-08-08

申请号：US17487725

申请日：2021-09-28

Applicant: KLA Corporation

Inventor： Inna Steely-Tarshish ,  Stefan Eyring ,  Mark Ghinovker ,  Yoel Feler ,  Eitan Hajaj ,  Ulrich Pohlmann ,  Nadav Gutman ,  Chris Steely ,  Raviv Yohanan ,  Ira Naot

IPC: G03F7/00 ,  G01N21/47 ,  G01N21/95 ,  G03F7/20

CPC classification number: G03F7/70633 ,  G01N21/4785 ,  G01N21/4788 ,  G01N21/9501 ,  G03F7/70625

Abstract: Combined electron beam overlay and scatterometry overlay targets include first and second periodic structures with gratings. Gratings in the second periodic structure can be positioned under the gratings of the first periodic structure or can be positioned between the gratings of the first periodic structure. These overlay targets can be used in semiconductor manufacturing.

公开(公告)号：US11637030B2

公开(公告)日：2023-04-25

申请号：US16900039

申请日：2020-06-12

Applicant: KLA Corporation

Inventor： Yoram Uziel ,  Ulrich Pohlmann ,  Frank Laske ,  Nadav Gutman ,  Ariel Hildesheim ,  Aviv Balan

IPC: H01L21/68 ,  H01L21/687 ,  H01L21/67

Abstract: A first x-y translation stage, a second x-y translation stage, and a chuck are disposed in a chamber. The chuck is situated above and coupled to the second x-y translation stage, which is situated above and coupled to the first x-y translation stage. The chuck is configured to support a substrate and to be translated by the first and second x-y stages in x- and y-directions, which are substantially parallel to a surface of the chuck on which the substrate is to be mounted. A first barrier and a second barrier are also disposed in the chamber. The first barrier is coupled to the first x-y translation stage to separate a first zone of the chamber from a second zone of the chamber. The second barrier is coupled to the second x-y translation stage to separate the first zone of the chamber from a third zone of the chamber.

公开(公告)号：US20220005668A1

公开(公告)日：2022-01-06

申请号：US16918242

申请日：2020-07-01

Applicant: KLA CORPORATION

Inventor： Nadav Gutman ,  Oliver Ache ,  Carey Phelps

IPC: H01J37/22 ,  H01J37/20 ,  H01J37/244 ,  H01J37/28

Abstract: An overlay target includes a grating-over-grating structure with a bottom grating structure disposed on a specimen and a top grating structure disposed on the bottom grating structure. The overlay target further includes a calibration scan location including the bottom grating structure but not the top grating structure and an overlay scan location including the top grating structure and the bottom grating structure.

公开(公告)号：US20210405540A1

公开(公告)日：2021-12-30

申请号：US16916272

申请日：2020-06-30

Applicant: KLA Corporation

Inventor： Henning Stoschus ,  Stefan Eyring ,  Ulrich Pohlmann ,  Inna Steely-Tarshish ,  Nadav Gutman

IPC: G03F7/20 ,  G06T7/00 ,  G06K9/32

Abstract: A metrology system may include a characterization tool configured to generate metrology data for a sample based on the interaction of an illumination beam with the sample, and may also include one or more adjustable measurement parameters to control the generation of metrology data. The metrology system may include one or more processors that may receive design data associated with a plurality of regions of interest for measurement, select individualized measurement parameters of the characterization tool for the plurality of regions of interest, and direct the characterization tool to characterize the plurality of regions of interest based on the individualized measurement parameters.

公开(公告)号：US11209737B1

公开(公告)日：2021-12-28

申请号：US16916272

申请日：2020-06-30

Applicant: KLA Corporation

Inventor： Henning Stoschus ,  Stefan Eyring ,  Ulrich Pohlmann ,  Inna Steely-Tarshish ,  Nadav Gutman

IPC: G03F7/20 ,  G06K9/32 ,  G06T7/00

Abstract: A metrology system may include a characterization tool configured to generate metrology data for a sample based on the interaction of an illumination beam with the sample, and may also include one or more adjustable measurement parameters to control the generation of metrology data. The metrology system may include one or more processors that may receive design data associated with a plurality of regions of interest for measurement, select individualized measurement parameters of the characterization tool for the plurality of regions of interest, and direct the characterization tool to characterize the plurality of regions of interest based on the individualized measurement parameters.

公开(公告)号：US20210364935A1

公开(公告)日：2021-11-25

申请号：US16964734

申请日：2020-06-25

Applicant: KLA CORPORATION

Inventor： Itay Gdor ,  Yuval Lubashevsky ,  Yuri Paskover ,  Yoram Uziel ,  Nadav Gutman

IPC: G03F9/00 ,  G03F7/20

Abstract: A target for use in the measurement of misregistration between layers formed on a wafer in the manufacture of semiconductor devices, the target including a first pair of periodic structures (FPPS) and a second pair of periodic structures (SPPS), each of the FPPS and the SPPS including a first edge, a second edge, a plurality of first periodic structures formed in a first area as part of a first layer and having a first pitch along a first pitch axis, the first pitch axis not being parallel to either of the first edge or second edge, and a plurality of second periodic structures formed in a second area as part of a second layer and having the first pitch along a second pitch axis, the second pitch axis being generally parallel to the first pitch axis.

公开(公告)号：US20210207956A1

公开(公告)日：2021-07-08

申请号：US17137840

申请日：2020-12-30

Applicant: KLA Corporation

Inventor： Andrei V. Shchegrov ,  Nadav Gutman ,  Alexander Kuznetsov ,  Antonio Arion Gellineau

IPC: G01B15/00 ,  G03F7/20

Abstract: Methods and systems for performing overlay and edge placement errors based on Soft X-Ray (SXR) scatterometry measurement data are presented herein. Short wavelength SXR radiation focused over a small illumination spot size enables measurement of design rule targets or in-die active device structures. In some embodiments, SXR scatterometry measurements are performed with SXR radiation having energy in a range from 10 to 5,000 electronvolts. As a result, measurements at SXR wavelengths permit target design at process design rules that closely represents actual device overlay. In some embodiments, SXR scatterometry measurements of overlay and shape parameters are performed simultaneously from the same metrology target to enable accurate measurement of Edge Placement Errors. In another aspect, overlay of aperiodic device structures is estimated based on SXR measurements of design rule targets by calibrating the SXR measurements to reference measurements of the actual device target.