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33 条记录 (耗时 0.027 秒)

    MAGNETIC MEMORY
    22.
    发明申请
    MAGNETIC MEMORY 审中-公开

    公开(公告)号：US20190088860A1

    公开(公告)日：2019-03-21

    申请号：US15913377

    申请日：2018-03-06

    申请人： KABUSHIKI KAISHA TOSHIBA

    发明人： Yoshiaki Saito ,  Tomoaki Inokuchi ,  Yushi Kato ,  Soichi Oikawa ,  Mizue Ishikawa ,  Hiroaki Yoda

    IPC分类号： H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22 ,  G11C11/16

    摘要： A magnetic memory according to an embodiment includes: first to third terminals; a nonmagnetic conductive layer including first to third regions, the second region being disposed between the first and third regions, the first region being electrically connected to the first terminal, and the third region being electrically connected to the second terminal; and a magnetoresistive element disposed to correspond to the second region, including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the second region, and a nonmagnetic layer disposed between the first and second magnetic layers, the conductive layer including at least one of an alloy including Ir and Ta, an alloy including Ir and V, an alloy including Au and V, an alloy including Au and Nb, or an alloy including Pt and V, each of the alloys having an fcc structure.

    Magnetic memory device
    23.
    发明授权
    Magnetic memory device 有权

    公开(公告)号：US10141037B2

    公开(公告)日：2018-11-27

    申请号：US15704571

    申请日：2017-09-14

    申请人： Kabushiki Kaisha Toshiba

    发明人： Yuichi Ohsawa ,  Hiroaki Yoda ,  Altansargai Buyandalai ,  Satoshi Shirotori ,  Mariko Shimizu ,  Hideyuki Sugiyama ,  Yushi Kato

    IPC分类号： G11C11/16 ,  H01L43/08 ,  H01L43/02

    摘要： According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.

    Magnetic memory device
    27.
    发明授权
    Magnetic memory device 有权

    公开(公告)号：US10453513B2

    公开(公告)日：2019-10-22

    申请号：US15918000

    申请日：2018-03-12

    申请人： Kabushiki Kaisha Toshiba

    发明人： Yushi Kato ,  Yoshiaki Saito ,  Mizue Ishikawa ,  Soichi Oikawa ,  Hiroaki Yoda

    IPC分类号： G11C11/16 ,  H01L27/22 ,  H01L43/06 ,  H01L43/08 ,  H01L43/10 ,  H01F10/32 ,  G11C11/18

    摘要： According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes first and second portions, and a third portion between the first and second portions. The conductive layer includes a first metal and boron. The first magnetic layer is separated from the third portion in a first direction crossing a second direction. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The controller supplies a current to the conductive layer. The first metal includes at least one selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

    Magnetic memory device
    28.
    发明授权
    Magnetic memory device 有权

    公开(公告)号：US10374150B2

    公开(公告)日：2019-08-06

    申请号：US15905271

    申请日：2018-02-26

    申请人： Kabushiki Kaisha Toshiba

    发明人： Yushi Kato ,  Yoshiaki Saito ,  Soichi Oikawa ,  Mizue Ishikawa ,  Hiroaki Yoda

    IPC分类号： G11C11/00 ,  H01L43/08 ,  G11C11/16 ,  H01L27/22 ,  H01L43/10

    摘要： According to one embodiment, a magnetic memory device includes a conductive layer, first and second magnetic layers, a first nonmagnetic layer and a controller. The conductive layer includes first and second portions, and a third portion positioned between the first and second portions. The conductive layer includes a first metal. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The second magnetic layer has first and second lattice lengths. The first lattice length is longer than the second lattice length. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.

    MAGNETIC MEMORY DEVICE
    30.
    发明申请
    MAGNETIC MEMORY DEVICE 审中-公开

    公开(公告)号：US20180366639A1

    公开(公告)日：2018-12-20

    申请号：US15905271

    申请日：2018-02-26

    申请人： Kabushiki Kaisha Toshiba

    发明人： Yushi Kato ,  Yoshiaki Saito ,  Soichi Oikawa ,  Mizue Ishikawa ,  Hiroaki Yoda

    IPC分类号： H01L43/08 ,  G11C11/16 ,  H01L43/10 ,  H01L27/22

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/10

    摘要： According to one embodiment, a magnetic memory device includes a conductive layer, first and second magnetic layers, a first nonmagnetic layer and a controller. The conductive layer includes first and second portions, and a third portion positioned between the first and second portions. The conductive layer includes a first metal. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The second magnetic layer has first and second lattice lengths. The first lattice length is longer than the second lattice length. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.