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公开(公告)号：US10103199B2
公开(公告)日：2018-10-16
申请号：US15421053
申请日：2017-01-31
Applicant: Kabushiki Kaisha Toshiba
Inventor： Tadaomi Daibou , Naoharu Shimomura , Yuuzo Kamiguchi , Hiroaki Yoda , Yuichi Ohsawa , Tomoaki Inokuchi , Satoshi Shirotori
IPC: G11C5/06 , G11C11/15 , G11C11/02 , G11C5/02 , H01L27/22 , H01L43/02 , H01L43/08 , G11C11/16 , H01L43/10
Abstract: A magnetic memory according to an embodiment includes: a conductive nonmagnetic layer including a first terminal, a second terminal, and a region between the first terminal and the second terminal; a magnetoresistive element including: a first magnetic layer; a second magnetic layer disposed between the region and the first magnetic layer; and a nonmagnetic intermediate layer disposed between the first magnetic layer and the second magnetic layer; a transistor including a third terminal, a fourth terminal, and a control terminal, the third terminal being electrically connected to the first terminal; a first wiring electrically connected to the first magnetic layer and the fourth terminal; a second wiring electrically connected to the control terminal; and a third wiring electrically connected to the second terminal.
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公开(公告)号：US10096770B2
公开(公告)日：2018-10-09
申请号：US15448892
申请日：2017-03-03
Applicant: Kabushiki Kaisha Toshiba
Inventor： Mariko Shimizu , Yuichi Ohsawa , Hiroaki Yoda , Hideyuki Sugiyama , Satoshi Shirotori , Altansargai Buyandalai
Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer, a first magnetic layer, a second magnetic layer, a first intermediate layer, a third magnetic layer, a fourth magnetic layer, a second intermediate layer, and a controller. The metal-containing layer includes first, second, third, fourth, and fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the first magnetic layer and a portion of the third portion. The first intermediate layer includes a portion provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the third magnetic layer and a portion of the fourth portion. The second intermediate layer includes a portion provided between the third and fourth magnetic layers. The controller is electrically connected with the first portion and the second portion.
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公开(公告)号：US09966122B2
公开(公告)日：2018-05-08
申请号：US15449040
申请日：2017-03-03
Applicant: Kabushiki Kaisha Toshiba
Inventor： Satoshi Shirotori , Hiroaki Yoda , Yuichi Ohsawa , Hideyuki Sugiyama , Mariko Shimizu , Altansargai Buyandalai , Naoharu Shimomura
CPC classification number: G11C11/161 , G11C11/1675 , H01L27/222 , H01L43/08 , H01L43/10
Abstract: According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.
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公开(公告)号：US20130248355A1
公开(公告)日：2013-09-26
申请号：US13621978
申请日：2012-09-18
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Yuichi Ohsawa , Junichi Ito , Shigeki Takahashi , Saori Kashiwada , Chikayoshi Kamata
IPC: C23F1/00
CPC classification number: H01L43/12 , H01F10/3254 , H01F41/308 , H01L21/32136 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a first magnetic layer, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, forming a hard mask layer on the second magnetic layer, and patterning the second magnetic layer, the tunnel barrier layer, and the first magnetic layer, with a cluster ion beam using the hard mask layer as a mask, wherein the cluster ion beam comprises cluster ions, cluster sizes of the cluster ions are distributed, and a peak value of the distribution of the cluster sizes is 2 pieces or more and 1000 pieces or less.
Abstract translation: 根据一个实施例，一种制造磁阻元件的方法，该方法包括形成第一磁性层，在第一磁性层上形成隧道势垒层，在隧道势垒层上形成第二磁性层，在第 第二磁性层，使用该硬掩模层作为掩模以簇离子束形成第二磁性层，隧道势垒层和第一磁性层，其中，簇离子束包括簇离子， 簇离子分布，簇大小分布的峰值为2片以上且1000片以下。
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公开(公告)号：US10811067B2
公开(公告)日：2020-10-20
申请号：US16119003
申请日：2018-08-31
Applicant: Kabushiki Kaisha Toshiba
Inventor： Altansargai Buyandalai , Satoshi Shirotori , Yuichi Ohsawa , Hideyuki Sugiyama , Mariko Shimizu , Hiroaki Yoda , Katsuhiko Koui
Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive layer includes first and second regions, and a third region between the first region and the second region. The second magnetic layer is provided between the third region and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first region toward the second region. The first nonmagnetic layer is provided between the first and second magnetic layers. The second region includes first to third conductive portions. A direction from the first conductive portion toward the second conductive portion is aligned with a third direction. The third direction crosses a plane including the first and second directions. The third conductive portion is between the first and second conductive portions in the third direction.
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Patent Agency Ranking
公开(公告)号：US10797229B2
公开(公告)日：2020-10-06
申请号：US16423805
申请日：2019-05-28
Applicant: Kabushiki Kaisha Toshiba
Inventor： Altansargai Buyandalai , Satoshi Shirotori , Yuichi Ohsawa , Hideyuki Sugiyama , Mariko Shimizu , Hiroaki Yoda , Tomoaki Inokuchi
Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, first to fourth magnetic layers, first and second intermediate layers, and a controller. The conductive layer includes first, to fifth portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first intermediate layer is provided between the first and second magnetic layers. The third magnetic layer is separated from the fourth portion. The fourth magnetic layer is provided between the fourth portion and the third magnetic layer. The second intermediate layer is provided between the third and fourth magnetic layers. The controller is electrically connected to the first and second portions. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.
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公开(公告)号：US10361358B2
公开(公告)日：2019-07-23
申请号：US15704867
申请日：2017-09-14
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Keiko Abe , Kazutaka Ikegami , Shinobu Fujita , Katsuhiko Koui , Tomoaki Inokuchi , Satoshi Shirotori , Yuichi Ohsawa , Hideyuki Sugiyama , Hiroaki Yoda , Naoharu Shimomura , Yuuzo Kamiguchi
Abstract: A magnetic memory includes: first to fourth wirings; first and second terminals; a first conductive layer including first to third regions, the second region being between the first region and the third region, the first region being electrically connected to the first terminal, and the third region being electrically connected to the second terminal; a first magnetoresistive element including a first and a second magnetic layer, and a first nonmagnetic layer disposed between the first and the magnetic layer; a first transistor including a third terminal electrically connected to the first magnetic layer, a fourth terminal electrically connected to the third wiring, and a first control terminal electrically connected to the first wiring; and a second transistor including a fifth terminal electrically connected to the first terminal, a sixth terminal electrically connected to the second wiring, and a second control terminal electrically connected to the first wiring.
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公开(公告)号：US20180174635A1
公开(公告)日：2018-06-21
申请号：US15703548
申请日：2017-09-13
Applicant: Kabushiki Kaisha Toshiba
Inventor： Hiroaki Yoda , Naoharu Shimomura , Yoshiaki Saito , Yuichi Ohsawa , Keiko Abe
IPC: G11C11/16
CPC classification number: G11C11/1675 , G11C11/16 , G11C11/161 , G11C11/1653 , G11C11/1659 , G11C11/1673
Abstract: A magnetic memory includes: first to third terminals; a conductive layer including first to fifth regions, the first region being electrically connected to the first terminal, the fifth region being electrically connected to the second terminal, and the third region being electrically connected to the third terminal; a first magnetoresistive element including a first magnetic layer, a second magnetic layer disposed between the second region and the first magnetic layer, and a first nonmagnetic layer disposed between the first and the second magnetic layer; a second magnetoresistive element including a third magnetic layer, a fourth magnetic layer disposed between the fourth region and the third magnetic layer, and a second nonmagnetic layer disposed between the third and the fourth magnetic layer; and a circuit flowing a write current between the first and the second terminal and between the second and the third terminal in a write operation.
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公开(公告)号：US09698340B2
公开(公告)日：2017-07-04
申请号：US15066137
申请日：2016-03-10
Applicant: Kabushiki Kaisha Toshiba
Inventor： Yuichi Ohsawa , Naoharu Shimomura , Satoshi Shirotori
CPC classification number: H01L43/08 , G11C11/161 , G11C11/1653 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01L27/222 , H01L43/12
Abstract: According to one embodiment, a magnetic memory element includes a first magnetic layer, a second magnetic layer, a nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, an electrode disposed on a side surface of the first magnetic layer, and a first insulation layer disposed between the first magnetic layer and the electrode, and including a first region with a first film thickness and a second region with a second film thickness which is less than the first film thickness.
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公开(公告)号：US20170179379A1
公开(公告)日：2017-06-22
申请号：US15451673
申请日：2017-03-07
Applicant: Kabushiki Kaisha Toshiba
Inventor： SATOSHI SHIROTORI , Hiroaki Yoda , Yuichi Ohsawa , Yuuzo Kamiguchi , Naoharu Shimomura , Tadaomi Daibou , Tomoaki Inokuchi
CPC classification number: H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01L23/528 , H01L27/228 , H01L43/02 , H01L43/10
Abstract: A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.
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