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公开(公告)号：US12142306B2
公开(公告)日：2024-11-12
申请号：US18359982
申请日：2023-07-27
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Tazumi Nagasawa , Satoshi Shirotori , Akira Kikitsu , Yoshihiro Higashi
Abstract: According to one embodiment, a magnetic sensor includes first to sixth shields, first and second magnetic layers, a first member, and first to fourth terminals. The first magnetic layer is provided between the first shield and the second shield. The first magnetic layer is between the third shield and the fourth shield in the second direction. The second magnetic layer is provided between the first magnetic layer and the second shield. The second magnetic layer is between the fifth shield and the sixth shield in the second direction. The second magnetic layer is electrically connected to the fifth shield and the sixth shield. The first member includes a first region and a second region. The first region is provided between the third shield and the first magnetic layer. The second region is provided between the first magnetic layer and the fourth shield.
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公开(公告)号：US11946975B2
公开(公告)日：2024-04-02
申请号：US17445684
申请日：2021-08-23
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Hitoshi Iwasaki , Satoshi Shirotori , Akira Kikitsu , Yoshihiro Higashi
IPC: G01R31/382 , A61B5/245 , G01N27/90
CPC classification number: G01R31/382 , G01N27/9006 , A61B5/245
Abstract: According to one embodiment, a magnetic sensor includes a first sensor part. The first sensor part includes a first magnetic member, a first counter magnetic member, and a first magnetic element. A direction from the first magnetic member toward the first counter magnetic member is along a first direction. The first magnetic element includes one or a plurality of first extension parts. The first extension part includes a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The first magnetic layer includes a first portion, a first counter portion, and a first middle portion. A direction from the first portion toward the first counter portion is along the first direction. The first middle portion is between the first portion and the first counter portion. The first nonmagnetic layer is between the first counter magnetic layer and at least a portion of the first middle portion.
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公开(公告)号：US11747303B2
公开(公告)日：2023-09-05
申请号：US17395183
申请日：2021-08-05
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Hitoshi Iwasaki , Satoshi Shirotori , Akira Kikitsu , Yoshihiro Higashi
IPC: G01N27/90 , G01N33/2045
CPC classification number: G01N27/9006 , G01N33/2045
Abstract: According to one embodiment of the invention, a magnetic sensor includes a first sensor part. The first sensor part includes a first magnetic member, a first counter magnetic member, and a first magnetic element. A direction from the first magnetic member to the first counter magnetic member is along a first direction. The first magnetic element includes one or a plurality of first extending portions. A first portion of the first extending portion overlaps the first magnetic member in a second direction crossing the first direction. A first counter portion of the first extending portion overlaps the first counter magnetic member in the second direction. A first direction length along the first direction of the first extending portion is longer than a third direction length along a third direction of the first extending portion. The third direction crosses a plane including the first direction and the second direction.
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公开(公告)号：US11237230B1
公开(公告)日：2022-02-01
申请号：US17169388
申请日：2021-02-05
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Hitoshi Iwasaki , Satoshi Shirotori , Akira Kikitsu , Yoshihiro Higashi
Abstract: According to one embodiment, a magnetic sensor includes a sensor part, a first circuit, and a second circuit. The sensor part includes a magnetic element part, first and second conductive members. The magnetic element part includes first to fourth magnetic elements. The first conductive member includes first to third conductive portions, and first and second middle portions. The second conductive member includes fourth to sixth conductive portions, and third and fourth middle portions. The first circuit is electrically connected to the third and sixth conductive portions. The first circuit is configured to supply a first current between the third and sixth conductive portions. The second circuit is electrically connected to a first connection point and a second connection point. The second circuit is electrically connected to first and second connection points. The second circuit is configured to supply a second current between the first and second connection points.
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公开(公告)号：US11127895B2
公开(公告)日：2021-09-21
申请号：US16684683
申请日：2019-11-15
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Satoshi Shirotori , Yuichi Ohsawa , Hideyuki Sugiyama , Altansargai Buyandalai , Mariko Shimizu , Hiroaki Yoda
Abstract: According to one embodiment, a magnetic memory device includes a first insulating region, a first counter insulating region, a first conductive member, and a first magnetic element. The first conductive member is provided between the first insulating region and the first counter insulating region. The first conductive member extends in a first direction crossing a second direction. The second direction is from the first insulating region toward the first counter insulating region. The first magnetic element is provided between the first insulating region and the first counter insulating region. A third direction from the first conductive member toward the first magnetic element crosses a plane including the first and second directions. A portion of a first insulating side surface of the first insulating region opposes the first conductive member. A portion of a first counter insulating side surface of the first counter insulating region opposes the first conductive member.
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Patent Agency Ranking
公开(公告)号：US10276786B2
公开(公告)日：2019-04-30
申请号：US15905907
申请日：2018-02-27
Applicant: Kabushiki Kaisha Toshiba
Inventor： Yuichi Ohsawa , Mariko Shimizu , Satoshi Shirotori , Hideyuki Sugiyama , Altansargai Buyandalai , Hiroaki Yoda
Abstract: According to one embodiment, a magnetic memory device includes a first conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a second conductive layer, a third magnetic layer, a second nonmagnetic layer, a fourth magnetic layer provided, a first compound region, and a first insulating region. The first compound region includes the first metal and at least one selected from the group consisting of oxygen, nitrogen, and fluorine. At least a portion of the first compound region is provided between the first conductive layer and the second conductive layer. The first insulating region includes at least one selected from the group consisting of Al and Si and at least one selected from the group consisting of oxygen, nitrogen, and fluorine. At least a portion of the first insulating region is provided between the first magnetic layer and the third magnetic layer.
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公开(公告)号：US10170694B1
公开(公告)日：2019-01-01
申请号：US15911341
申请日：2018-03-05
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Satoshi Shirotori , Yuichi Ohsawa , Hideyuki Sugiyama , Mariko Shimizu , Altansargai Buyandalai , Naoharu Shimomura , Katsuhiko Koui , Tomoaki Inokuchi , Hiroaki Yoda
Abstract: A magnetic memory of an embodiment includes: a first conductive layer, which is nonmagnetic and includes at least a first element, the first conductive layer including a first to fifth regions; a first magnetoresistive element disposed corresponding to the third region and including a first magnetic layer, a second magnetic layer including at least a second element, a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, a second nonmagnetic layer disposed between the second magnetic layer and the first nonmagnetic layer and including at least a third element, and a third magnetic layer disposed between the second nonmagnetic layer and the first nonmagnetic layer; a second conductive layer disposed corresponding to the second region and including at least the first to third elements; and a third conductive layer disposed corresponding to the fourth region, and including at least the first to third elements.
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公开(公告)号：US10109332B2
公开(公告)日：2018-10-23
申请号：US15704672
申请日：2017-09-14
Applicant: Kabushiki Kaisha Toshiba
Inventor： Mariko Shimizu , Yuichi Ohsawa , Hideyuki Sugiyama , Satoshi Shirotori , Altansargai Buyandalai , Yushi Kato
Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a first conductive region, a first insulating region, and a controller. The conductive layer includes a first element. The conductive layer includes a first portion, a second portion, a third portion between the first portion and the second portion, and a fourth portion between the second portion and the third portion. The first conductive region includes a second element different from the first element. The first conductive region is provided between the second magnetic layer and the third portion. The first insulating region includes a first insulating substance. The first insulating substance is an insulating compound of the second element. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation.
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公开(公告)号：US20180114558A1
公开(公告)日：2018-04-26
申请号：US15848022
申请日：2017-12-20
Applicant: Kabushiki Kaisha Toshiba
Inventor： Hiroaki Yoda , Naoharu Shimomura , Yuichi Ohsawa , Tadaomi Daibou , Tomoaki Inokuchi , Satoshi Shirotori , Altansargai Buyandalai , Yuuzo Kamiguchi
CPC classification number: G11C11/1675 , G11C11/15 , G11C11/16 , G11C11/1659 , G11C11/1673 , H01L27/224 , H01L27/228 , H01L43/02 , H01L43/08
Abstract: A magnetic memory according to an embodiment includes: a conductive layer including a first and second terminals; a plurality of magnetoresistive elements separately disposed on the conductive layer between the first and second terminals, each magnetoresistive element including a reference layer, a storage layer between the reference layer and the conductive layer, and a nonmagnetic layer between the storage layer and the reference layer; and a circuit configured to apply a first potential to the reference layers of the magnetoresistive elements and to flow a first write current between the first and second terminals, and configured to apply a second potential to the reference layer or the reference layers of one or more of the magnetoresistive elements to which data is to be written, and to flow a second write current between the first and second terminals in an opposite direction to the first write current.
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公开(公告)号：US09916882B2
公开(公告)日：2018-03-13
申请号：US15262139
申请日：2016-09-12
Applicant: Kabushiki Kaisha Toshiba
Inventor： Satoshi Shirotori , Hiroaki Yoda , Yuichi Ohsawa , Yuuzo Kamiguchi , Naoharu Shimomura , Tadaomi Daibou , Tomoaki Inokuchi
CPC classification number: H01L43/08 , G11C11/161 , G11C11/1655 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C11/18 , H01L23/528 , H01L27/228 , H01L43/02 , H01L43/10
Abstract: A magnetic memory of an embodiment includes: a first to third terminals; a magnetoresistive element including a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer; a second nonmagnetic layer including a first to third portions, the first portion being located between the second and the third portions, the second and third portions being electrically connected to the second and third terminals respectively, the first magnetic layer being disposed between the first portion and the first nonmagnetic layer; and a third nonmagnetic layer including a fourth to sixth portions, the fourth portion being located between the first portion and the first magnetic layer, the fifth portion including a first region extending from the magnetoresistive element to the second terminal, the sixth portion including a second region extending from the magnetoresistive element to the third terminal.
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