-
公开(公告)号：US11127895B2
公开(公告)日：2021-09-21
申请号：US16684683
申请日：2019-11-15
发明人： Satoshi Shirotori , Yuichi Ohsawa , Hideyuki Sugiyama , Altansargai Buyandalai , Mariko Shimizu , Hiroaki Yoda
摘要： According to one embodiment, a magnetic memory device includes a first insulating region, a first counter insulating region, a first conductive member, and a first magnetic element. The first conductive member is provided between the first insulating region and the first counter insulating region. The first conductive member extends in a first direction crossing a second direction. The second direction is from the first insulating region toward the first counter insulating region. The first magnetic element is provided between the first insulating region and the first counter insulating region. A third direction from the first conductive member toward the first magnetic element crosses a plane including the first and second directions. A portion of a first insulating side surface of the first insulating region opposes the first conductive member. A portion of a first counter insulating side surface of the first counter insulating region opposes the first conductive member.
-
公开(公告)号：US10438616B2
公开(公告)日：2019-10-08
申请号：US16218604
申请日：2018-12-13
发明人： Kenichiro Yamada , Shuichi Murakami , Naoyuki Narita , Katsuhiko Koui , Akihiko Takeo , Mariko Shimizu , Hitoshi Iwasaki
摘要： According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first non-magnetic layer. The stacked body includes a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and a non-magnetic intermediate layer provided between the first magnetic layer and the second magnetic layer. The first non-magnetic layer is provided between the second magnetic layer and the magnetic pole, and contacts the magnetic pole and the second magnetic layer. The first magnetic layer has a first thickness and a first saturation magnetic flux density. The second magnetic layer has a second thickness and a second saturation magnetic flux density. A second product of the second thickness and the second saturation magnetic flux density is larger than a first product of the first thickness and the first saturation magnetic flux density.
-
公开(公告)号：US10276786B2
公开(公告)日：2019-04-30
申请号：US15905907
申请日：2018-02-27
发明人： Yuichi Ohsawa , Mariko Shimizu , Satoshi Shirotori , Hideyuki Sugiyama , Altansargai Buyandalai , Hiroaki Yoda
摘要： According to one embodiment, a magnetic memory device includes a first conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a second conductive layer, a third magnetic layer, a second nonmagnetic layer, a fourth magnetic layer provided, a first compound region, and a first insulating region. The first compound region includes the first metal and at least one selected from the group consisting of oxygen, nitrogen, and fluorine. At least a portion of the first compound region is provided between the first conductive layer and the second conductive layer. The first insulating region includes at least one selected from the group consisting of Al and Si and at least one selected from the group consisting of oxygen, nitrogen, and fluorine. At least a portion of the first insulating region is provided between the first magnetic layer and the third magnetic layer.
-
公开(公告)号：US10170694B1
公开(公告)日：2019-01-01
申请号：US15911341
申请日：2018-03-05
发明人： Satoshi Shirotori , Yuichi Ohsawa , Hideyuki Sugiyama , Mariko Shimizu , Altansargai Buyandalai , Naoharu Shimomura , Katsuhiko Koui , Tomoaki Inokuchi , Hiroaki Yoda
摘要： A magnetic memory of an embodiment includes: a first conductive layer, which is nonmagnetic and includes at least a first element, the first conductive layer including a first to fifth regions; a first magnetoresistive element disposed corresponding to the third region and including a first magnetic layer, a second magnetic layer including at least a second element, a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, a second nonmagnetic layer disposed between the second magnetic layer and the first nonmagnetic layer and including at least a third element, and a third magnetic layer disposed between the second nonmagnetic layer and the first nonmagnetic layer; a second conductive layer disposed corresponding to the second region and including at least the first to third elements; and a third conductive layer disposed corresponding to the fourth region, and including at least the first to third elements.
-
公开(公告)号：US10109332B2
公开(公告)日：2018-10-23
申请号：US15704672
申请日：2017-09-14
发明人： Mariko Shimizu , Yuichi Ohsawa , Hideyuki Sugiyama , Satoshi Shirotori , Altansargai Buyandalai , Yushi Kato
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a first conductive region, a first insulating region, and a controller. The conductive layer includes a first element. The conductive layer includes a first portion, a second portion, a third portion between the first portion and the second portion, and a fourth portion between the second portion and the third portion. The first conductive region includes a second element different from the first element. The first conductive region is provided between the second magnetic layer and the third portion. The first insulating region includes a first insulating substance. The first insulating substance is an insulating compound of the second element. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation.
-
公开(公告)号：US09799354B2
公开(公告)日：2017-10-24
申请号：US15262081
申请日：2016-09-12
发明人： Shuichi Murakami , Kenichiro Yamada , Katsuhiko Koui , Mariko Shimizu , Akihiko Takeo , Naoyuki Narita , Hitoshi Iwasaki
CPC分类号： G11B5/315 , G11B5/1278 , G11B5/314 , G11B2005/0024
摘要： According to one embodiment, a magnetic recording head includes a magnetic pole, a stacked body, and a first nonmagnetic layer. The stacked body includes first magnetic layer, a second magnetic layer provided between the first magnetic layer and the magnetic pole, and an intermediate layer provided between the first magnetic layer and the second magnetic layer and being nonmagnetic. The first nonmagnetic layer is provided between the second magnetic layer and the magnetic pole. A product of a thickness and a saturation magnetic flux density of the second magnetic layer is larger than a product of a thickness and a saturation magnetic flux density of the first magnetic layer. The length of the first magnetic layer is shorter than a length of the second magnetic layer. A current flows from the second magnetic layer toward the first magnetic layer.
-
7.发明授权Magnetic recording head and magnetic recording/reproducing apparatus using the same 有权磁记录头和使用其的磁记录/再现装置公开(公告)号：US08922949B1
公开(公告)日：2014-12-30
申请号：US14099766
申请日：2013-12-06
发明人： Katsuhiko Koui , Hiromi Yuasa , Mariko Shimizu , Shuichi Murakami
IPC分类号： G11B5/02
CPC分类号： G11B5/3133 , G11B5/235 , G11B5/3106 , G11B5/3136 , G11B2005/0021
摘要： According to one embodiment, the magnetic recording head comprises a cooling/heating material between a laminated oscillator and a main magnetic pole, the cooling/heating material including the following layers laminated from the laminated oscillator side in the following order, a first thermoelectric material layer having the same junction area as that of the laminated oscillator, a first metal material layer having the same junction area as that of the laminated oscillator, a second metal material layer having the same junction area as that of the main magnetic pole, and a second thermoelectric material layer having the same junction area as that of the main magnetic pole.
摘要翻译： 根据一个实施例，磁记录头包括层压振荡器和主磁极之间的冷却/加热材料，冷却/加热材料包括以下顺序从叠层振荡器侧层压的以下层：第一热电材料层 具有与层叠振荡器相同的接合面积，具有与层叠振荡器相同的接合面积的第一金属材料层，具有与主磁极相同的接合面积的第二金属材料层，以及第二金属材料层 热电材料层具有与主磁极相同的接合面积。
-
8.发明申请公开(公告)号：US20140146420A1
公开(公告)日：2014-05-29
申请号：US14101206
申请日：2013-12-09
发明人： Mariko Shimizu , Katsuhiko Koui , Shuichi Murakami , Hiromi Yuasa
IPC分类号： G11B5/147
CPC分类号： G11B5/35 , G11B5/1278 , G11B5/314 , G11B2005/001
摘要： According to one embodiment, a magnetic head includes a spin torque oscillator formed between a main magnetic pole and auxiliary magnetic pole. The spin torque oscillator includes a transmission-type spin transfer layer, first interlayer, oscillation layer, second interlayer, and reflection-type spin transfer layer. The transmission-type spin transfer layer includes a first perpendicular magnetization film and first interface magnetic layer. The first interface magnetic layer contains at least one element selected from Fe, Co, and Ni, and at least one element selected from Cr, V, Mn, Ti, and Sc. The reflection-type spin transfer layer includes a second perpendicular magnetization film.
摘要翻译： 根据一个实施例，磁头包括形成在主磁极和辅助磁极之间的自旋扭矩振荡器。 自旋转矩振荡器包括透射型自旋转移层，第一中间层，振荡层，第二中间层和反射型自旋转移层。 透射型自旋转移层包括第一垂直磁化膜和第一界面磁性层。 第一界面磁性层含有选自Fe，Co和Ni中的至少一种元素，以及选自Cr，V，Mn，Ti和Sc中的至少一种元素。 反射型自旋转移层包括第二垂直磁化膜。
-
公开(公告)号：US12009442B2
公开(公告)日：2024-06-11
申请号：US17446591
申请日：2021-08-31
发明人： Honam Kwon , Mariko Shimizu , Kazuaki Okamoto , Kazuhiro Suzuki
IPC分类号： H01L31/00 , G01S7/481 , G01S7/4863 , H01L31/0232 , H01L31/107 , G01S17/931
CPC分类号： H01L31/02327 , G01S7/4816 , G01S7/4863 , H01L31/107 , G01S17/931
摘要： According to one embodiment, a light detector includes a junction region, a first insulating portion, and a quenching part. The junction region includes a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type. The second semiconductor region is provided on the first semiconductor region and forms a p-n junction surface with the first semiconductor region. The first insulating portion has an inclined surface inclined with respect to a first direction perpendicular to the p-n junction surface and includes void. The inclined surface is provided at a same height as at least a portion of the junction region and crosses the second direction from the junction region toward the first insulating portion. The quenching part is electrically connected to the second semiconductor region.
-
公开(公告)号：US10395709B2
公开(公告)日：2019-08-27
申请号：US16146303
申请日：2018-09-28
发明人： Mariko Shimizu , Yuichi Ohsawa , Hideyuki Sugiyama , Satoshi Shirotori , Altansargai Buyandalai , Yushi Kato
摘要： According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a first conductive region, a first insulating region, and a controller. The conductive layer includes a first element. The conductive layer includes a first portion, a second portion, a third portion between the first portion and the second portion, and a fourth portion between the second portion and the third portion. The first conductive region includes a second element different from the first element. The first conductive region is provided between the second magnetic layer and the third portion. The first insulating region includes a first insulating substance. The first insulating substance is an insulating compound of the second element. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation.
-
-
-
-
-
-
-
-
-
搜索结果
47 条记录 (耗时 0.022 秒)
