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公开(公告)号：US09999356B2
公开(公告)日：2018-06-19
申请号：US14813783
申请日：2015-07-30
Applicant: Kabushiki Kaisha Toshiba
Inventor： Alexander Devin Giddings , Hideaki Fukuzawa , Yoshihiko Fuji , Hiromi Yuasa , Michiko Hara , Shuichi Murakami
CPC classification number: A61B5/021 , A61B5/02108 , G01B7/24 , G01L1/125
Abstract: A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.
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公开(公告)号：US20150338292A1
公开(公告)日：2015-11-26
申请号：US14813783
申请日：2015-07-30
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Alexander Devin Giddings , Hideaki Fukuzawa , Yoshihiko Fuji , Hiromi Yuasa , Mlchiko Hara , Shuichi Murakami
CPC classification number: A61B5/021 , A61B5/02108 , G01B7/24 , G01L1/125
Abstract: A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.
Abstract translation: 应变传感器元件包括具有无磁性层，间隔层和磁性参考层的层压膜。 自由层具有可变的磁化方向和面外磁化方向。 参考层具有可变的磁化方向，该自由层的磁化强度比自由层的磁化强。 间隔层设置在自由层和参考层之间。 一对电极设置有层叠膜的平面。 基板设置有对电极中的任一个并且可以变形。 当衬底失真时，自由层的磁化的旋转角度与参考层的磁化的旋转角度不同。 电阻根据自由层和参考层之间的磁化角度而改变，这允许元件作为应变传感器工作。
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公开(公告)号：US09087533B2
公开(公告)日：2015-07-21
申请号：US14569356
申请日：2014-12-12
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Mariko Shimizu , Katsuhiko Koui , Shuichi Murakami , Hiromi Yuasa
IPC: G11B5/35
CPC classification number: G11B5/35 , G11B5/1278 , G11B5/314 , G11B2005/001
Abstract: According to one embodiment, a magnetic head includes a spin torque oscillator formed between a main magnetic pole and auxiliary magnetic pole. The spin torque oscillator includes a transmission-type spin transfer layer, first interlayer, oscillation layer, second interlayer, and reflection-type spin transfer layer. The transmission-type spin transfer layer includes a first perpendicular magnetization film and first interface magnetic layer. The first interface magnetic layer contains at least one element selected from Fe, Co, and Ni, and at least one element selected from Cr, V, Mn, Ti, and Sc. The reflection-type spin transfer layer includes a second perpendicular magnetization film.
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公开(公告)号：US09066661B2
公开(公告)日：2015-06-30
申请号：US14219878
申请日：2014-03-19
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Alexander Devin Giddings , Hideaki Fukuzawa , Yoshihiko Fuji , Hiromi Yuasa , Mlchiko Hara , Shuichi Murakami
CPC classification number: A61B5/021 , A61B5/02108 , G01B7/24 , G01L1/125
Abstract: A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.
Abstract translation: 应变传感器元件包括具有无磁性层，间隔层和磁性参考层的层压膜。 自由层具有可变的磁化方向和面外磁化方向。 参考层具有可变的磁化方向，该自由层的磁化强度比自由层的磁化强。 间隔层设置在自由层和参考层之间。 一对电极设置有层叠膜的平面。 基板设置有对电极中的任一个并且可以变形。 当衬底失真时，自由层的磁化的旋转角度与参考层的磁化的旋转角度不同。 电阻根据自由层和参考层之间的磁化角度而改变，这允许元件作为应变传感器工作。
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5.发明申请公开(公告)号：US20150162031A1
公开(公告)日：2015-06-11
申请号：US14569103
申请日：2014-12-12
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Mariko Shimizu , Katsuhiko Koui , Shuichi Murakami , Hiromi Yuasa
IPC: G11B5/35
CPC classification number: G11B5/35 , G11B5/1278 , G11B5/314 , G11B2005/001
Abstract: According to one embodiment, a magnetic head includes a spin torque oscillator formed between a main magnetic pole and auxiliary magnetic pole. The spin torque oscillator includes a transmission-type spin transfer layer, first interlayer, oscillation layer, second interlayer, and reflection-type spin transfer layer. The transmission-type spin transfer layer includes a first perpendicular magnetization film and first interface magnetic layer. The first interface magnetic layer contains at least one element selected from Fe, Co, and Ni, and at least one element selected from Cr, V, Mn, Ti, and Sc. The reflection-type spin transfer layer includes a second perpendicular magnetization film.
Abstract translation: 根据一个实施例，磁头包括形成在主磁极和辅助磁极之间的自旋扭矩振荡器。 自旋转矩振荡器包括透射型自旋转移层，第一中间层，振荡层，第二中间层和反射型自旋转移层。 透射型自旋转移层包括第一垂直磁化膜和第一界面磁性层。 第一界面磁性层含有选自Fe，Co和Ni中的至少一种元素，以及选自Cr，V，Mn，Ti和Sc中的至少一种元素。 反射型自旋转移层包括第二垂直磁化膜。
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Patent Agency Ranking
6.发明授权Method of manufacturing a CPP device with a plurality of metal oxide templates in a confining current path (CCP) spacer 有权在约束电流路径（CCP）间隔物中制造具有多个金属氧化物模板的CPP器件的方法公开(公告)号：US09478355B2
公开(公告)日：2016-10-25
申请号：US14628508
申请日：2015-02-23
Applicant: TDK Corporation , Kabushiki Kaisha Toshiba
Inventor： Kunliang Zhang , Min Li , Yue Liu , Hideaki Fukuzawa , Hiromi Yuasa
IPC: H01F41/30 , G11B5/31 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/09 , G11B5/39 , H01F10/32 , H01L43/08
CPC classification number: H01F41/307 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G11B5/3106 , G11B5/313 , G11B5/3929 , G11B2005/3996 , H01F10/3259 , H01F10/3268 , H01L43/08 , Y10T29/49032 , Y10T29/49043 , Y10T29/49227
Abstract: A method is described for forming a confining current path (CCP) spacer in a CPP-GMR sensor. A first Cu spacer, an amorphous metal/alloy layer such as Hf, a second Cu spacer, and an oxidizable layer such as Al, Mg, or AlCu are sequentially deposited on a ferromagnetic layer. A pre-ion treatment (PIT) and ion assisted oxidation (IAO) transform the amorphous layer into a first metal oxide template and the oxidizable layer into a second metal oxide template both having Cu metal paths therein. A third Cu layer is deposited on the second metal oxide template. The amorphous layer promotes smoothness and smaller grain size in the oxidizable layer to minimize variations in the metal paths and thereby improves dR/R, R, and dR uniformity by 50% or more.
Abstract translation: 描述了一种用于在CPP-GMR传感器中形成约束电流路径（CCP）间隔物的方法。 第一Cu间隔物，非晶金属/合金层如Hf，第二Cu间隔物和可氧化层如Al，Mg或AlCu依次沉积在铁磁层上。 预离子处理（PIT）和离子辅助氧化（IAO）将非晶层转化为第一金属氧化物模板，并将可氧化层转变成其中具有Cu金属路径的第二金属氧化物模板。 在第二金属氧化物模板上沉积第三Cu层。 无定形层促进可氧化层中的平滑度和较小的晶粒尺寸以最小化金属路径的变化，从而将dR / R，R和DR均匀度提高50％以上。
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公开(公告)号：US09131856B2
公开(公告)日：2015-09-15
申请号：US14219860
申请日：2014-03-19
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Alexander Devin Giddings , Hideaki Fukuzawa , Yoshihiko Fuji , Hiromi Yuasa , Michiko Hara , Shuichi Murakami
CPC classification number: A61B5/021 , A61B5/02108 , G01B7/24 , G01L1/125
Abstract: A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.
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公开(公告)号：US20150162032A1
公开(公告)日：2015-06-11
申请号：US14569356
申请日：2014-12-12
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Mariko Shimizu , Katsuhiko Koui , Shuichi Murakami , Hiromi Yuasa
IPC: G11B5/35
CPC classification number: G11B5/35 , G11B5/1278 , G11B5/314 , G11B2005/001
Abstract: According to one embodiment, a magnetic head includes a spin torque oscillator formed between a main magnetic pole and auxiliary magnetic pole. The spin torque oscillator includes a transmission-type spin transfer layer, first interlayer, oscillation layer, second interlayer, and reflection-type spin transfer layer. The transmission-type spin transfer layer includes a first perpendicular magnetization film and first interface magnetic layer. The first interface magnetic layer contains at least one element selected from Fe, Co, and Ni, and at least one element selected from Cr, V, Mn, Ti, and Sc. The reflection-type spin transfer layer includes a second perpendicular magnetization film.
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公开(公告)号：US10342439B2
公开(公告)日：2019-07-09
申请号：US15974030
申请日：2018-05-08
Applicant: KABUSHIKI KAISHA TOSHIBA
Inventor： Alexander Devin Giddings , Hideaki Fukuzawa , Yoshihiko Fuji , Hiromi Yuasa , Michiko Hara , Shuichi Murakami
Abstract: A strain sensor element comprises a laminated film which has a magnetic free layer, a spacer layer, and a magnetic reference layer. The free layer has a variable magnetization direction and a out-of-plane magnetization direction. The reference layer has a variable magnetization direction which is pinned more strongly than the magnetization of the free layer. The spacer layer provided between the free layer and the reference layer. A pair of electrodes is provided with a plane of the laminated film. A substrate is provided with either of the pair electrodes and can be strained. The rotation angle of the magnetization of the free layer is different from the rotation angle of the magnetization of the reference layer when the substrate is distorted. Electrical resistance is changed depending on the magnetization angle between the free layer and the reference layer, which allows the element to operate as a strain sensor.
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公开(公告)号：US10082430B2
公开(公告)日：2018-09-25
申请号：US15671592
申请日：2017-08-08
Applicant: Kabushiki Kaisha Toshiba
Inventor： Hideaki Fukuzawa , Akihiko Enamito , Osamu Nishimura , Michiko Hara , Hiromi Yuasa , Yoshihiko Fuji , Masayuki Kii , Eizo Fujisawa
Abstract: According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.
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