Abstract:
According to an embodiment, a magnetic element includes a first layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a second layer, and a third magnetic layer. The first layer includes ruthenium. The second magnetic layer is provided between the first layer and the first magnetic layer. The first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The second layer includes tantalum. The second layer contacts the first layer and is provided between the first layer and the second magnetic layer. A lattice plane spacing of the second layer in a first direction is not less than 0.23 nm and not more than 0.25 nm. The first direction is from the first layer toward the first magnetic layer. The third magnetic layer includes manganese. The third magnetic layer is provided between the second layer and the second magnetic layer.
Abstract:
According to one embodiment, a microphone package includes: a pressure sensing element including a film and a device; and a cover. The film generates strain in response to pressure. The device includes: a first electrode; a second electrode; and a first magnetic layer. The first magnetic layer is provided between the first electrode and the second electrode and has a first magnetization. The cover includes: an upper portion; and a side portion. The side portion is magnetic and provided depending on the first magnetization and the second magnetization.
Abstract:
According to one embodiment, a sensor includes a sensing element portion and a first magnetic portion. The sensing element portion includes a supporter, a deformable film portion supported by the supporter, and a first element including a magnetic layer and being provided at the film portion. The first magnetic portion is separated from the sensing element portion. The first magnetic portion includes a plurality of first holes. A width of one of the plurality of first holes along a second direction is narrower than a length of the sensing element portion along the second direction and wider than a length of the first element along the second direction. The second direction crosses a first direction from the film portion toward the first element.
Abstract:
According to one embodiment, a pressure sensor includes a film part, and a sensing unit. A circumscribing rectangle circumscribing a configuration of a film surface of the film part has a first side, a second side, a third side connected to one end of the first side and one end of the second side, a fourth side connected to one other end of the first side and one other end of the second side, and a centroid of the circumscribing rectangle. The circumscribing rectangle includes a first region enclosed by the first side, line segments connecting the centroid to the one end of the first side, and to the one other end of the first side. The sensing unit includes sensing elements provided on a portion of the film surface overlapping the first region. Each sensing element includes a first, second magnetic layers, and a spacer layer.
Abstract:
An inertial sensor includes a base portion, a weight portion, a connection portion, and a first sensing element unit. The connection portion connects the weight portion and the base portion and is capable of being deformed in accordance with a change in relative position of the weight portion with respect to the position of the base portion. The first sensing element unit is provided on a first portion of the connection portion and includes a first magnetic layer, a second magnetic layer, and a nonmagnetic first intermediate layer. The nonmagnetic first intermediate layer is provided between the first magnetic layer and the second magnetic layer.
Abstract:
According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.
Abstract:
A pressure sensor device comprises a support substrate including a thin film area which is bendable by a pressure, a sensor film comprising a first electrode provided on the thin film area, a second electrode provided on the first electrode, a reference layer provided between the first electrode and the second electrode, a free layer provided between the reference layer and the first electrode or between the reference layer and the second electrode, a spacer layer provided between the reference layer and the free layer, a shield provided on a side of the support substrate.
Abstract:
According to one embodiment, a pressure sensor includes a base and a sensor unit provided on the base. The sensor unit includes a transducing thin film having a first surface, a first strain sensing element provided on the first surface, and a second strain sensing element provided on the first surface. The first strain sensing element includes a first magnetic layer, a first film having a first oxygen concentration, a second magnetic layer provided between the first magnetic layer and the first film, and a first intermediate layer provided between the first and the second magnetic layer. The second strain sensing element includes a third magnetic layer, a second film having a second oxygen concentration different from the first concentration, a fourth magnetic layer provided between the third magnetic layer and the second film, and a second intermediate layer provided between the third and the fourth magnetic layer.
Abstract:
According to one embodiment, a strain sensor includes a substrate, a lid, a frame, and a sensing unit. The substrate has a first surface. The lid is provided on the first surface. The frame is provided between the substrate and the lid. The frame is nonconductive and includes a magnetic body. The sensing unit is provided inside the frame between the substrate and the lid, and includes a magnetoresistance effect element.
Abstract:
A blood-pressure sensor includes a substrate, a first electrode, a magnetization fixed layer, a nonmagnetic layer, a magnetization free layer, and a second electrode. The substrate is bent to generate a tensile stress at least in a first direction. The first electrode is provided on the substrate. The magnetization fixed layer has magnetization to be fixed in a second direction, and is provided on the substrate. The nonmagnetic layer is provided on the magnetization fixed layer. The magnetization free layer has a magnetization direction which is different from the first direction and from a direction perpendicular to the first direction. The second electrode is provided on the magnetization free layer.