公开(公告)号：US10889504B2

公开(公告)日：2021-01-12

申请号：US16344000

申请日：2018-09-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wenlin Zhang ,  Ce Ning ,  Hehe Hu ,  Zhengliang Li

IPC: C01G15/00 ,  H01L29/786

Abstract: An oxide semiconductor composition for use in thin film transistors includes indium oxide, zinc oxide, and an oxide including a doping element of scandium, such as scandium oxide. A molar percentage of the indium oxide can be larger than approximately 50%. The oxide semiconductor composition can have a formula of In2Sc2ZnO7. Manufacturing of the oxide semiconductor composition can include: mixing indium oxide powder, scandium oxide powder, and zinc oxide powder to thereby obtain an oxide shaped object; and sintering the oxide shaped object to form the oxide semiconductor composition. A thin-film transistor for use in a semiconductor device, such as a display apparatus, can include the oxide semiconductor composition, and can thereby have improved mobility of the oxide semiconductor due to the reduced oxygen vacancy therein.

公开(公告)号：US10553621B2

公开(公告)日：2020-02-04

申请号：US16302850

申请日：2018-03-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hehe Hu ,  Wei Yang ,  Xinhong Lu ,  Ke Wang ,  Yu Wen

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786 ,  H01L27/32

Abstract: Embodiment of the present disclosure provide a thin-film transistor structure, a manufacturing method thereof, a display panel and a display device. The thin-film transistor structure includes: a base substrate; and a first thin-film transistor and a second thin-film transistor formed on the base substrate, wherein a first active layer of the first thin-film transistor is doped with hydrogen; a material of a second active layer of the second thin-film transistor is metal oxide; and a first isolation barrier surrounding the first thin-film transistor and/or a second isolation barrier surrounding the second thin-film transistor are disposed on the base substrate.

公开(公告)号：US20190221673A1

公开(公告)日：2019-07-18

申请号：US16327208

申请日：2018-05-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hehe Hu

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/78642 ,  H01L29/41733 ,  H01L29/41741 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78696

Abstract: Disclosed are a thin film transistor and a manufacturing method therefor, an array substrate, a display panel and a display device. The thin film transistor includes a base substrate; a first electrode on the base substrate; a second electrode on the first electrode; an active layer provided on the base substrate and connecting the first electrode with the second electrode; and a gate electrode on the base substrate. The base substrate includes an upper surface facing towards the first electrode, the active layer includes a first side surface extending in a direction intersecting the upper surface of the base substrate, the first side surface connects the first electrode with the second electrode, and the gate electrode surrounds the first side surface.

公开(公告)号：US20240313007A1

公开(公告)日：2024-09-19

申请号：US18274897

申请日：2022-07-01

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xinhong Lu ,  Chunfang Zhang ,  Xiaoyan Zhu ,  Shuang Sun ,  Shuilang Dong ,  Jingshang Zhou ,  Qi Qi ,  Hehe Hu

IPC: H01L27/12 ,  H01L25/16

CPC classification number: H01L27/1248 ,  H01L27/1259 ,  H01L25/167

Abstract: A driving base plate includes a functional region (A) and a peripheral region (B) surrounding the functional region (A). Both the functional region (A) and the peripheral region (B) include a supporting substrate, and the functional region (A) further includes a flexible substrate and at least one protecting layer that are sequentially arranged on the supporting substrate. The region of the orthographic projection of the flexible substrate on the supporting substrate is located within the region where the supporting substrate within the functional region (A) is located, and the protecting layer covers the surface of the flexible substrate further from the supporting substrate and the side of the flexible substrate close to the peripheral region (B). The adhesive force between the flexible substrate and the supporting substrate of the driving base plate is increased, and the reliability of the products manufactured by using the driving base plate is improved.

公开(公告)号：US20240261785A1

公开(公告)日：2024-08-08

申请号：US18018795

申请日：2021-12-31

Applicant: BOE Technology Group Co., Ltd.

Inventor： Feifei Li ,  Bolin Fan ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Nianqi Yao ,  Jiayu He ,  Jie Huang ,  Kun Zhao

IPC: B01L3/00

CPC classification number: B01L3/502761 ,  B01L2200/0647 ,  B01L2200/12 ,  B01L2300/0645 ,  B01L2300/0848 ,  B01L2400/0415

Abstract: Provided is a micro-nano fluidic substrate, a chip, a preparation method, and a system. The micro-nano fluidic substrate includes: a base; an electrode layer located on the base, the electrode layer includes a first electrode, a second electrode, and a control electrode; and a film layer located on the electrode layer and far away from the base, the film layer includes a groove layer, a nano-channel and a micro-channel, the groove layer includes a first groove, the nano-channel is located in the first groove, an orthographic projection of the nano-channel on the base at least partially coincides with an orthographic projection of the control electrode on the base, and the micro-channel is in communication with the nano-channel, the micro-channel includes a first micro-channel and a second micro-channel, and the first micro-channel is in communication with the first electrode, the second micro-channel is in communication with the second electrode.

公开(公告)号：US20240243206A1

公开(公告)日：2024-07-18

申请号：US18686604

申请日：2021-08-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Guangcai Yuan ,  Lingyan Liang ,  Hongtao Cao ,  Fengjuan Liu ,  Ce Ning ,  Fei Wang ,  Hehe Hu ,  Xiaolong Wang

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/04 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L27/1222 ,  H01L29/04 ,  H01L29/66742

Abstract: A thin film transistor; includes a substrate; and a semiconductor layer provided on the substrate. The semiconductor layer includes a first surface proximate to the substrate and a second surface away from the substrate, and the semiconductor layer is made of a metal oxide semiconductor material. The semiconductor layer has a channel region; and crystals of metal oxide semiconductor are formed at least in the channel region of the semiconductor layer and proximate to the first surface or the second surface.

公开(公告)号：US20240186379A1

公开(公告)日：2024-06-06

申请号：US17798347

申请日：2021-10-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Hehe Hu ,  Fengjuan Liu ,  Guangcai Yuan ,  Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Kun Zhao

IPC: H01L29/10 ,  H01L21/385 ,  H01L29/24 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/1041 ,  H01L21/385 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

Abstract: Provided is a method for manufacturing a metal-oxide thin-film transistor (TFT). The method includes: forming, on a base substrate, an active layer including a metal oxide semiconductor, and a functional layer laminated on the active layer and containing a lanthanide element; and annealing the active layer and the functional layer, such that the lanthanide element in the functional layer is diffused into the active layer.

公开(公告)号：US20230006070A1

公开(公告)日：2023-01-05

申请号：US17782035

申请日：2021-05-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jie Huang ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jiayu He ,  Nianqi Yao ,  Kun Zhao ,  Feng Qu ,  Xiaochun Xu

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12

Abstract: A semiconductor substrate manufacturing method and a semiconductor substrate. The manufacturing method includes: forming a first semiconductor layer on the base substrate at a first temperature with a first oxide semiconductor material; forming the second semiconductor layer directly on the first semiconductor layer with a second oxide semiconductor material; and performing a patterning process such that the first semiconductor layer and the second semiconductor layer are respectively patterned into a seed layer and a first channel layer. Both the first oxide semiconductor material and the second oxide semiconductor material are capable of forming crystalline phases at a second temperature, the second temperature is less than or equal to 40° C., and the first temperature is greater than or equal to 100° C.

公开(公告)号：US11532686B2

公开(公告)日：2022-12-20

申请号：US16330719

申请日：2018-09-11

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xinhong Lu ,  Ke Wang ,  Hehe Hu ,  Ce Ning ,  Wei Yang

IPC: H01L29/78 ,  H01L27/32 ,  H01L29/786

Abstract: An array substrate includes a base substrate; a first thin film transistor on the base substrate and including a first active layer, a first gate electrode, a first source electrode and a first drain electrode; a second thin film transistor on the base substrate and including a second active layer, a second gate electrode, a second source electrode and a second drain electrode; a first gate insulating layer between the first active layer and the first gate electrode; and a second gate insulating layer between the second active layer and the second gate electrode, the second gate insulating layer being different from the first gate insulating layer. The first source electrode, the first drain electrode, and the second gate electrode are in a same layer. The first source electrode and the first drain electrode are on a side of the second gate insulating layer distal to the base substrate.

公开(公告)号：US20220344517A1

公开(公告)日：2022-10-27

申请号：US17763297

申请日：2021-04-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jie Huang ,  Zhengliang Li ,  Ce Ning ,  Hehe Hu ,  Nianqi Yao ,  Kun Zhao ,  Fengjuan Liu ,  Tianmin Zhou ,  Liping Lei

IPC: H01L29/786

Abstract: A thin film transistor includes a gate electrode, an active layer, a gate insulating layer located between the gate electrode and the active layer, and a source electrode and a drain electrode electrically connected to the active layer. The active layer includes a channel layer and at least one channel protection layer; a material of each of the channel layer and the at least one channel protection layer is a metal oxide semiconductor material. The at least one channel protection layer is a crystallizing layer, and metal elements of the at least one channel protection layer include non-rare earth metal elements including In, Ga, Zn and Sn.