公开(公告)号：US20200251310A1

公开(公告)日：2020-08-06

申请号：US16748632

申请日：2020-01-21

Applicant: Applied Materials, Inc.

Inventor： Madhu Santosh Kumar MUTYALA ,  Sanjay G. KAMATH ,  Deenesh PADHI ,  Arkajit Roy BARMAN

IPC: H01J37/32 ,  H05B1/02 ,  H01L21/67

Abstract: Embodiments described herein relate to gas line systems with a multichannel splitter spool. In these embodiments, the gas line systems will include a first gas line that is configured to supply a first gas. The first gas line is coupled to a multichannel splitter spool with a plurality of second gas lines into which the first gas flows. Each gas line of the plurality of second gas lines will have a smaller volume than the volume of the first gas line. The smaller second gas lines will be wrapped by a heater jacket. Due to the smaller volume of the second gas lines, when the first gas is flowed through the second gas lines, the heater jacket will sufficiently heat the first gas, eliminating the condensation induced particle defects that occur in conventional gas line systems when the first gas meets with a second gas in the gas line system.

公开(公告)号：US20200095677A1

公开(公告)日：2020-03-26

申请号：US16464892

申请日：2017-12-18

Applicant: Applied Materials, Inc.

Inventor： Michael Wenyoung TSIANG ,  Praket P. JHA ,  Deenesh PADHI

IPC: C23C16/44 ,  H01L21/02 ,  H01J37/32 ,  C23C16/505 ,  C23C16/40 ,  C23C16/24

Abstract: Implementations of the present disclosure provide methods for processing substrates in a processing chamber. In one implementation, the method includes (a) depositing a dielectric layer on a first substrate at a first chamber pressure using a first high-frequency RF power, (b) depositing sequentially a dielectric layer on N substrates subsequent to the first substrate at a second chamber pressure, wherein N is an integral number of 5 to 10, and wherein depositing each substrate of N substrates comprises using a second high-frequency RF power that has a power density of about 0.21 W/cm2 to about 0.35 W/cm2 lower than that of the first high-frequency RF power, (c) performing a chamber cleaning process without the presence of a substrate, and (d) repeating (a) to (c).

公开(公告)号：US20190027403A1

公开(公告)日：2019-01-24

申请号：US16140342

申请日：2018-09-24

Applicant: APPLIED MATERIALS, INC.

Inventor： Sree Rangasai V. KESAPRAGADA ,  Kevin MORAES ,  Srinivas GUGGILLA ,  He REN ,  Mehul NAIK ,  David THOMPSON ,  Weifeng YE ,  Yana CHENG ,  Yong CAO ,  Xianmin TANG ,  Paul F. MA ,  Deenesh PADHI

IPC: H01L21/768 ,  H01L21/02

CPC classification number: H01L21/76832 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/32 ,  H01L21/76826 ,  H01L21/76829 ,  H01L21/76834

Abstract: In some embodiments, a method of forming an interconnect structure includes selectively depositing a barrier layer atop a substrate having one or more exposed metal surfaces and one or more exposed dielectric surfaces, wherein a thickness of the barrier layer atop the one or more exposed metal surfaces is greater than the thickness of the barrier layer atop the one or more exposed dielectric surfaces. In some embodiments, a method of forming an interconnect structure includes depositing an etch stop layer comprising aluminum atop a substrate via a physical vapor deposition process; and depositing a barrier layer atop the etch stop layer via a chemical vapor deposition process, wherein the substrate is transferred from a physical vapor deposition chamber after depositing the etch stop layer to a chemical vapor deposition chamber without exposing the substrate to atmosphere.

公开(公告)号：US20180023193A1

公开(公告)日：2018-01-25

申请号：US15654436

申请日：2017-07-19

Applicant: Applied Materials, Inc.

Inventor： Sanjeev BALUJA ,  Kalyanjit GHOSH ,  Ren-Guan DUAN ,  Mayur G. KULKARNI ,  Gregory SIU ,  Praket P. JHA ,  Deenesh PADHI ,  Lei GUO ,  Wei Min CHAN ,  Ajit BALAKRISHNA

IPC: C23C16/44

CPC classification number: C23C16/4405 ,  C23C16/4408 ,  C23C16/45519 ,  H01J37/00

Abstract: Embodiments disclosed herein generally relate to systems and methods to prevent free radical damage to sensitive components in a process chamber and optimizing flow profiles. The processing chamber utilizes a cover substrate on lift pins and an inert bottom purge flow to shield the substrate support from halogen reactants. During a clean process, the cover substrate and the purge flow restricts halogen reactants from contacting the substrate support. The method of cleaning includes placing a cover substrate on a plurality of lift pins that extend through a substrate support in a processing chamber, raising the cover substrate via the lift pins to expose a space between the cover substrate and the substrate support, supplying a halogen containing gas into the processing chamber, supplying a second gas through an opening in the processing chamber, and flowing the second gas through the space between the cover substrate and the substrate support.

公开(公告)号：US20170125241A1

公开(公告)日：2017-05-04

申请号：US15074038

申请日：2016-03-18

Applicant: Applied Materials, Inc.

Inventor： Shaunak MUKHERJEE ,  Kang Sub YIM ,  Deenesh PADHI ,  Kevin M. CHO ,  Khoi Anh PHAN ,  Chien-An CHEN ,  Priyanka DASH

IPC: H01L21/02 ,  H01L21/32

CPC classification number: H01L21/02164 ,  H01L21/02126 ,  H01L21/02211 ,  H01L21/02214 ,  H01L21/02274 ,  H01L21/32

Abstract: Methods of single precursor deposition of hardmask and ARC layers, are described. The resultant film is a SiOC layer with higher carbon content terminated with high density silicon oxide SiO2 layer with low carbon content. The method can include delivering a first deposition precursor to a substrate, the first deposition precursor comprising an SiOC precursor and a first flow rate of an oxygen containing gas; activating the deposition species using a plasma, whereby a SiOC containing layer over an exposed surface of the substrate is deposited. Then delivering a second precursor gas to the SiOC containing layer, the second deposition gas comprising different or same SiOC precursor with a second flow rate and a second flow rate of the oxygen containing gas and activating the deposition gas using a plasma, the second deposition gas forming a SiO2 containing layer over the hardmask, the SiO2 containing layer having very low carbon.

公开(公告)号：US20160172211A1

公开(公告)日：2016-06-16

申请号：US14933826

申请日：2015-11-05

Applicant: Applied Materials, Inc.

Inventor： Alexandros T. DEMOS ,  Deenesh PADHI

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  C23C16/303 ,  C23C16/45536 ,  C23C16/482 ,  H01L21/02178 ,  H01L21/02277 ,  H01L21/0228

Abstract: Implementations described herein generally relate to methods for depositing etch stop layers, such as AlN layers, using UV assisted CVD. Methods disclosed herein generally include positioning a substrate in a process region of a process chamber; delivering an aluminum-containing precursor to the process region, the aluminum-containing precursor depositing an aluminum species onto the substrate; purging the process region of aluminum-containing precursor using an inert gas; delivering a UV responsive nitrogen-containing precursor to the process region, the UV responsive nitrogen-containing gas being activated using UV radiation to create nitrogen radicals, the nitrogen radicals reacting with the aluminum species to form an AlN layer; and purging the process region of UV responsive nitrogen-containing precursor using an inert gas.

Abstract translation: 本文描述的实施方式一般涉及使用UV辅助CVD沉积蚀刻停止层（例如AlN层）的方法。 本文公开的方法通常包括将基底定位在处理室的处理区域中; 向工艺区域输送含铝前体，所述含铝前体将铝物质沉积到所述基底上; 使用惰性气体吹扫含铝前体的工艺区域; 将UV反应性含氮前体输送到工艺区域，UV反应性含氮气体使用UV辐射活化以产生氮自由基，氮自由基与铝物质反应形成AlN层; 并使用惰性气体吹扫UV反应性含氮前体的工艺区域。

公开(公告)号：US20160071724A1

公开(公告)日：2016-03-10

申请号：US14535803

申请日：2014-11-07

Applicant: Applied Materials, Inc.

Inventor： Xiaolan BA ,  Weifeng YE ,  Mei-yee SHEK ,  Yu JIN ,  Li-Qun XIA ,  Deenesh PADHI ,  Alexandros T. DEMOS

IPC: H01L21/02 ,  C23C16/44

CPC classification number: C23C16/4408 ,  C23C16/36 ,  C23C16/45523 ,  C23C16/50 ,  C23C16/56 ,  H01L21/02167 ,  H01L21/76826 ,  H01L21/76832 ,  H01L21/76834

Abstract: Embodiments described herein generally relate to the formation of a UV compatible barrier stack. Methods described herein can include delivering a process gas to a substrate positioned in a process chamber. The process gas can be activated to form an activated process gas, the activated process gas forming a barrier layer on a surface of the substrate, the barrier layer comprising silicon, carbon and nitrogen. The activated process gas can then be purged from the process chamber. An activated nitrogen-containing gas can be delivered to the barrier layer, the activated nitrogen-containing gas having a N2:NH3 ratio of greater than about 1:1. The activated nitrogen-containing gas can then be purged from the process chamber. The above elements can be performed one or more times to deposit the barrier stack.

Abstract translation: 本文描述的实施方案通常涉及形成与UV相容的阻挡层叠体。 本文所述的方法可以包括将处理气体输送到位于处理室中的基板。 工艺气体可以被活化以形成活化的工艺气体，活化的工艺气体在衬底的表面上形成阻挡层，阻挡层包括硅，碳和氮。 然后可以从处理室清除活化的工艺气体。 可以将活化的含氮气体输送到阻挡层，活性含氮气体的N 2 :NH 3比率大于约1:1。 然后可以将活化的含氮气体从处理室清除。 上述元件可以执行一次或多次以沉积势垒堆叠。

公开(公告)号：US20140162194A1

公开(公告)日：2014-06-12

申请号：US13897270

申请日：2013-05-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Jingjing XU ,  Joe Griffith CRUZ ,  Pramit MANNA ,  Deenesh PADHI ,  Bok Hoen KIM ,  Barry L. CHIN

IPC: G03F7/16

CPC classification number: G03F7/167 ,  H01L21/02118 ,  H01L21/02277 ,  H01L21/0271

Abstract: Methods and apparatus for forming a sacrificial during a novel process sequence of lithography and photoresist patterning are provided. In one embodiment, a method of processing a substrate having a resist material and an anti-reflective coating material thereon includes depositing an organic polymer layer over the surface of the substrate inside a process chamber using a CVD technique. The CVD technique includes flowing a monomer into a processing region of the process chamber, flowing an initiator into the processing region through one or more filament wires heated to a temperature between about 200° C. and about 450° C., and forming the organic polymer layer. In addition, the organic polymer layer is ashable and can be removed from the surface of the substrate when the resist material is removed from the surface of the substrate.

Abstract translation: 提供了在光刻和光致抗蚀剂图案化的新工艺序列期间形成牺牲的方法和装置。 在一个实施例中，一种在其上处理具有抗蚀剂材料和抗反射涂层材料的衬底的方法包括：使用CVD技术在处理室内的衬底的表面上沉积有机聚合物层。 CVD技术包括使单体流入处理室的处理区域，通过加热至约200℃至约450℃之间的温度的一根或多根细丝丝将引发剂流入加工区域，并形成有机物 聚合物层。 另外，当从基板的表面去除抗蚀剂材料时，有机聚合物层是可灰化的，并且可以从基板的表面去除。

公开(公告)号：US20200211834A1

公开(公告)日：2020-07-02

申请号：US16725226

申请日：2019-12-23

Applicant: Applied Materials, Inc.

Inventor： Chuanxi YANG ,  Hang YU ,  Sanjay KAMATH ,  Deenesh PADHI ,  Honggun KIM ,  Euhngi LEE ,  Zubin HUANG ,  Diwakar N. KEDLAYA ,  Rui CHENG ,  Karthik JANAKIRAMAN

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/02 ,  C23C16/513

Abstract: Methods for forming the silicon boron nitride layer are provided. The method includes positioning a substrate on a pedestal in a process region within a process chamber, heating a pedestal retaining the substrate, and introducing a first flow of a first process gas and a second flow of a second process gas to the process region. The first flow of the first process gas contains silane, ammonia, helium, nitrogen, argon, and hydrogen. The second flow of the second process gas contains diborane and hydrogen. The method also includes forming a plasma concurrently with the first flow of the first process gas and the second flow of the second process gas to the process region and exposing the substrate to the first process gas, the second process gas, and the plasma to deposit the silicon boron nitride layer on the substrate.

公开(公告)号：US20200173022A1

公开(公告)日：2020-06-04

申请号：US16678996

申请日：2019-11-08

Applicant: Applied Materials, Inc.

Inventor： Xinhai HAN ,  Deenesh PADHI ,  Daemian Raj BENJAMIN RAJ ,  Kristopher ENSLOW ,  Wenjiao WANG ,  Masaki OGATA ,  Sai Susmita ADDEPALLI ,  Nikhil Sudhindrarao JORAPUR ,  Gregory Eugene CHICHKANOFF ,  Shailendra SRIVASTAVA ,  Jonghoon BAEK ,  Zakaria IBRAHIMI ,  Juan Carlos ROCHA-ALVAREZ ,  Tza-Jing GUNG

IPC: C23C16/455 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11578 ,  H01L27/11551 ,  C23C16/40 ,  C23C16/34 ,  H01J37/32

Abstract: Embodiments of the disclosure describe an apparatus and a method for depositing a film layer that may have minimum contribution to overlay error after a sequence of deposition and lithographic exposure processes. In one example, a method includes positioning a substrate on a substrate support in a process chamber, and flowing a deposition gas mixture comprising a silicon containing gas and a reacting gas to the process chamber through a showerhead having a convex surface facing the substrate support or a concave surface facing the substrate support in accordance with a stress profile of the substrate. A plasma is formed in the presence of the deposition gas mixture in the process chamber by applying an RF power to multiple coupling points of the showerhead that are symmetrically arranged about a center point of the showerhead. A deposition process is then performed on the substrate.