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    METHODS FOR MODIFYING PHOTORESIST PROFILES AND TUNING CRITICAL DIIMENSIONS
    2.
    发明申请
    METHODS FOR MODIFYING PHOTORESIST PROFILES AND TUNING CRITICAL DIIMENSIONS 审中-公开

    公开(公告)号：US20200321210A1

    公开(公告)日：2020-10-08

    申请号：US16797111

    申请日：2020-02-21

    Applicant: Applied Materials, Inc.

    Inventor： Meenakshi GUPTA ,  Rui CHENG ,  Srinivas GUGGILLA ,  Karthik JANAKIRAMAN ,  Diwakar N. KEDLAYA ,  Zubin HUANG

    IPC: H01L21/027 ,  H01L21/32 ,  H01L21/02

    Abstract: Embodiments for processing a substrate are provided and include a method of trimming photoresist to provide photoresist profiles with smooth sidewall surfaces and to tune critical dimensions (CD) for the patterned features and/or a subsequently deposited dielectric layer. The method can include depositing a sacrificial structure layer on the substrate, depositing a photoresist on the sacrificial structure layer, and patterning the photoresist to produce a crude photoresist profile on the sacrificial structure layer. The method also includes trimming the photoresist with a plasma to produce a refined photoresist profile covering a first portion of the sacrificial structure layer while a second portion of the sacrificial structure layer is exposed, etching the second portion of the sacrificial structure layer to form patterned features disposed on the substrate, and depositing a dielectric layer on the patterned features.

    CVD BASED SPACER DEPOSITION WITH ZERO LOADING
    3.
    发明申请
    CVD BASED SPACER DEPOSITION WITH ZERO LOADING 审中-公开

    公开(公告)号：US20200043722A1

    公开(公告)日：2020-02-06

    申请号：US16514534

    申请日：2019-07-17

    Applicant: Applied Materials, Inc.

    Inventor： Rui CHENG ,  Karthik JANAKIRAMAN ,  Zubin HUANG ,  Diwakar N. KEDLAYA

    IPC: H01L21/02 ,  H01L21/033

    Abstract: Embodiments of the present disclosure relate to deposition methods for dielectric layers with zero pattern loading characteristics. In one embodiment, the method includes depositing a conformal dielectric layer on the substrate having a patterned area and a blanket area by exposing the substrate to a deposition precursor and a tuning gas simultaneously without the presence of plasma in a process chamber, wherein the deposition precursor is reacted to form a chemical reaction by-product, and the chemical reaction by-product is the same as the tuning gas, and wherein the deposition precursor and the tuning gas are provided at an amount that is more than required for the deposition reaction to occur at the patterned area and the blanket area.

    FILM FORMATION VIA PULSED RF PLASMA
    5.
    发明申请
    FILM FORMATION VIA PULSED RF PLASMA 审中-公开

    公开(公告)号：US20200258720A1

    公开(公告)日：2020-08-13

    申请号：US16785331

    申请日：2020-02-07

    Applicant: Applied Materials, Inc.

    Inventor： Krishna NITTALA ,  Diwakar N. KEDLAYA ,  Karthik JANAKIRAMAN ,  Yi YANG ,  Rui CHENG

    IPC: H01J37/32 ,  H01L21/02 ,  C23C16/505 ,  C23C16/515

    Abstract: Systems and methods of using pulsed RF plasma to form amorphous and microcrystalline films are discussed herein. Methods of forming films can include (a) forming a plasma in a process chamber from a film precursor and (b) pulsing an RF power source to cause a duty cycle on time (TON) of a duty cycle of a pulse generated by the RF power source to be less than about 20% of a total cycle time (TTOT) of the duty cycle to form the film. The methods can further include (c) depositing a first film interlayer on a substrate in the process chamber; (d) subsequent to (c), purging the process chamber; and (e) subsequent to (d), introducing a hydrogen plasma to the process chamber. Further in the method, (b)-(e) are repeated to form a film. The film can have an in-film hydrogen content of less than about 10%.

    ROTATING SUBSTRATE LASER ANNEAL
    7.
    发明申请
    ROTATING SUBSTRATE LASER ANNEAL 审中-公开
    旋转底片激光天线

    公开(公告)号：US20170032865A1

    公开(公告)日：2017-02-02

    申请号：US15213844

    申请日：2016-07-19

    Applicant: Applied Materials, Inc.

    Inventor： Joseph M. RANISH ,  Shashank SHARMA ,  Diwakar N. KEDLAYA ,  Aaron Muir HUNTER

    IPC: G21K5/10

    CPC classification number: G21K5/10 ,  H01L21/67115

    Abstract: Embodiments of the present disclosure relate to thermal processing of substrates. More specifically, embodiments described herein relate to flash on spike annealing processes and apparatus suitable for performing such processes. In one embodiment, a thermal processing apparatus may include a lamp radiation source, a laser source, and a reflector plate disposed between the lamp radiation source and the laser source. One or more apertures may be formed in the reflector plate and the laser source may be positioned adjacent to the reflector plate such that a laser beam emitted from the laser source propagates through the one or more apertures. In one embodiment, the reflector plate may be substantially circular and the one or more apertures may approximate a sector of the reflector plate.

    Abstract translation: 本公开的实施例涉及基板的热处理。 更具体地说，本文描述的实施例涉及闪光退火工艺和适于执行这些工艺的装置。 在一个实施例中，热处理设备可以包括灯辐射源，激光源和设置在灯辐射源和激光源之间的反射板。 可以在反射板中形成一个或多个孔，并且激光源可以邻近反射板定位，使得从激光源发射的激光束传播通过一个或多个孔。 在一个实施例中，反射板可以是基本上圆形的并且一个或多个孔可以接近反射板的扇形。

    FIBER ARRAY LINE GENERATOR
    8.
    发明申请
    FIBER ARRAY LINE GENERATOR 审中-公开
    光纤阵列发生器

    公开(公告)号：US20150165551A1

    公开(公告)日：2015-06-18

    申请号：US14172422

    申请日：2014-02-04

    Applicant: Applied Materials, Inc.

    Inventor： Douglas E. HOLMGREN ,  Samuel C. HOWELLS ,  Aaron Muir HUNTER ,  Theodore P. MOFFITT ,  Diwakar N. KEDLAYA

    IPC: B23K26/06 ,  H01L21/67

    Abstract: Embodiments described herein relate to the rapid thermal processing of substrates. A fiber coupled laser diode array is provided in an optical system configured to generate a uniform irradiance pattern on the surface of a substrate. A plurality of individually controllable laser diodes are optically coupled via a plurality of fibers to one or more lenses. The fiber coupled laser diode array generates a Gaussian radiation profile which is defocused by the lenses to generate a uniform intensity image. In one embodiment, a field stop is disposed within the optical system.

    Abstract translation: 本文所述的实施例涉及衬底的快速热处理。 在配置成在衬底的表面上产生均匀辐照度图案的光学系统中提供光纤耦合激光二极管阵列。 多个可单独控制的激光二极管通过多个光纤光耦合到一个或多个透镜。 光纤耦合的激光二极管阵列产生高斯辐射分布，其由透镜散焦以产生均匀的强度图像。 在一个实施例中，场停止件设置在光学系统内。

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