公开(公告)号：US20060012011A1

公开(公告)日：2006-01-19

申请号：US10535741

申请日：2004-06-03

申请人： Seiji Nakahata ,  Ryu Hirota ,  Keiji Ishibashi ,  Takatomo Sasaki ,  Yusuke Mori

发明人： Seiji Nakahata ,  Ryu Hirota ,  Keiji Ishibashi ,  Takatomo Sasaki ,  Yusuke Mori

IPC分类号： H01L21/28 ,  H01L29/20

CPC分类号： C30B29/403 ,  C30B29/38 ,  C30B33/00 ,  C30B33/10 ,  H01L21/30612

摘要： A method of processing a surface of a nitride semiconductor crystal, wherein a surface of a nitride semiconductor crystal is brought into contact with a liquid containing at least Na, Li or Ca as a processing solution. In the method, the processing solution can be a liquid containing at least Na, having an Na content of 5-95 mol %. The processing solution can be a liquid containing at least Li, having an Li content of 5-100 mol %. A nitride semiconductor crystal having a maximum depth of a surface scratch of at most 0.01 μm or an average thickness of a damaged layer of at most 2 μm. Consequently, a method of processing a surface of a nitride semiconductor crystal with a decreased depth of a surface scratch or a decreased thickness of a damaged layer, and a nitride semiconductor crystal obtained with the method can be provided.

摘要翻译： 一种处理氮化物半导体晶体的表面的方法，其中使氮化物半导体晶体的表面与至少含有Na，Li或Ca的液体作为处理溶液接触。 在该方法中，处理溶液可以是含有至少Na，Na含量为5-95mol％的液体。 处理液可以是含有Li含量为5〜100摩尔％的至少Li的液体。 具有至多0.01μm的表面划痕的最大深度或至多2μm的损伤层的平均厚度的氮化物半导体晶体。 因此，可以提供一种利用该方法获得的具有降低的表面划痕深度或损伤层厚度减小的氮化物半导体晶体的表面的处理方法。

公开(公告)号：US20050202400A1

公开(公告)日：2005-09-15

申请号：US10517422

申请日：2003-06-23

申请人： Tomohiro Tsuji ,  Toshihiro Mizukami ,  Aya Konishi ,  Yusuke Mori ,  Yukie Nakazawa

发明人： Tomohiro Tsuji ,  Toshihiro Mizukami ,  Aya Konishi ,  Yusuke Mori ,  Yukie Nakazawa

IPC分类号： G01N15/00 ,  G01N15/14 ,  G01N33/52 ,  C12Q1/00

CPC分类号： G01N33/52 ,  G01N2015/1477

摘要： There is provided a method for classifying and counting leukocytes with abnormal DNA amount, which comprises: (1) a step of staining cells in a sample obtained from a hematological sample by treatment with a hemolytic agent to lyse erythrocytes, with a fluorescent dye which can make a difference in the fluorescence intensity at least among mature leukocytes, leukocytes with abnormal DNA amount and immature leukocytes; (2) a step of introducing the sample containing the stained cells into a flow cytometer to measure scattered light and fluorescence of the respective cells; (3) a step of classifying leukocytes and coincidence cells/platelet clumps utilizing a difference in the intensity of a scattered light peak and a difference in the scattered light width; (4) a step of classifying and counting mature leukocytes, leukocytes with abnormal DNA amount and immature leukocytes, utilizing a difference in the scattered light intensity and a difference in the fluorescence intensity of leukocytes classified in the step (3).

摘要翻译： 提供了一种用于对异常DNA量进行白细胞分类和计数的方法，其包括：（1）通过用溶血剂处理从血液样品获得的样品中的细胞染色红细胞裂解红细胞的步骤，可以使用荧光染料 至少在成熟白细胞，具有异常DNA量的白细胞和未成熟白细胞之间的荧光强度差异; （2）将含有染色细胞的样品引入流式细胞仪中以测量各细胞的散射光和荧光的步骤; （3）利用散射光峰的强度和散射光宽度的差异来分类白细胞和符合细胞/血小板结块的步骤; （4）利用步骤（3）中分类的散射光强度和白细胞的荧光强度差异，对成熟白细胞，具有异常DNA量的白细胞和未成熟白细胞进行分类和计数的步骤。

公开(公告)号：US20050059229A1

公开(公告)日：2005-03-17

申请号：US10911939

申请日：2004-08-04

申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Takatomo Sasaki ,  Fumio Kawamura

发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Takatomo Sasaki ,  Fumio Kawamura

IPC分类号： C30B19/02 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L21/208 ,  H01L21/28 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/30612 ,  C30B19/02 ,  C30B29/40 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/30625

摘要： The present invention provides a Group III nitride crystal substrate whose surface has concavities and convexities reduced in size. The surfaces with concavities and convexities, such as hillocks, pits and facets, of Group III nitride crystals are brought into contact with a melt and thereby the surfaces are subjected to meltback etching or mechanochemical polishing. The melt includes at least one of alkali metal and alkaline-earth metal. Thus a Group III nitride crystal substrate that has reduced strain and a reduced number of defects, which are caused through the processing, and is excellent in surface flatness is manufactured. Furthermore, by the use of the Group III nitride crystal substrate of the present invention, for instance, semiconductor devices of high performance can be obtained.

摘要翻译： 本发明提供一种III型氮化物晶体基板，其表面的尺寸和凹凸减小。 将III族氮化物晶体的具有凹凸和凹凸的表面，例如小丘，凹坑和小面与熔体接触，从而对表面进行回熔蚀刻或机械化学抛光。 熔体包括碱金属和碱土金属中的至少一种。 因此，制造了通过加工而产生的应力减小和缺陷数量减少，表面平坦性优异的III族氮化物晶体基板。 此外，通过使用本发明的III族氮化物晶体基板，例如可以获得高性能的半导体器件。

公开(公告)号：US08790929B2

公开(公告)日：2014-07-29

申请号：US12497952

申请日：2009-07-06

申请人： Yusuke Mori ,  Kinya Uchihashi ,  Yasuhiro Sakai

发明人： Yusuke Mori ,  Kinya Uchihashi ,  Yasuhiro Sakai

IPC分类号： G01N33/48

CPC分类号： G01N1/38 ,  G01N15/1209 ,  G01N2015/1236

摘要： The invention provides a reagent for diluting a blood sample, comprising water, polyoxyethylene alkyl ether having a hydroxyl value of 52 to 60, and an osmo-regulator for regulating the osmotic pressure of the reagent in the range of 150 to 400 mOsm/kg, as well as a method for measuring the mean corpuscular volume of a blood sample.

摘要翻译： 本发明提供了一种用于稀释血液样品的试剂，包括水，羟值为52至60的聚氧乙烯烷基醚和用于调节试剂渗透压的渗透压调节剂，范围为150-400mOsm / kg， 以及用于测量血液样品的平均红细胞体积的方法。

公开(公告)号：US08443017B2

公开(公告)日：2013-05-14

申请号：US12758198

申请日：2010-04-12

申请人： Ryoji Suzuki ,  Yusuke Mori

发明人： Ryoji Suzuki ,  Yusuke Mori

IPC分类号： G06F7/00

CPC分类号： G11B20/10527 ,  G06F5/01 ,  G10L21/0364

摘要： A digital data processor which receives an N-bit input signal from a data source and converts the N-bit input signal into an M-bit output signal, the M-bit being larger than the N-bit. The digital data processor includes: an weighted addition circuit which is operable to perform weighted addition on at least the input signal and a signal being time-shifted with respect to the input signal and output as a weighted added input signal; an arithmetic shift circuit which is operable to perform an arithmetic rightward shift operation on the weighted added input signal for a predetermined number of shifts and output as a processed input signal; a bit extension circuit which is operable to attach a predetermined bits to an LSD side of the input signal to generate an intermediate signal of M bits; and an addition circuit which is operable to perform addition of the intermediate signal and the processed input signal so as to generate the M-bit output signal.

摘要翻译： 数字数据处理器，其从数据源接收N位输入信号，并将N位输入信号转换成M位输出信号，M位大于N位。 所述数字数据处理器包括：加权加法电路，其可操作以至少对所述输入信号执行加权相加，以及相对于所述输入信号进行时移的信号，并作为加权相加输入信号输出; 算术移位电路，其可操作以对所述加权的相加输入信号执行预定数量的移位并作为经处理的输入信号输出的算术右移移位操作; 一个扩展电路，用于将预定的比特附加到输入信号的LSD侧，以产生M比特的中间信号; 以及加法电路，其可操作以执行中间信号和经处理的输入信号的相加以便产生M位输出信号。

公开(公告)号：US08372299B2

公开(公告)日：2013-02-12

申请号：US12411266

申请日：2009-03-25

申请人： Yasunori Nakajima ,  Yusuke Mori

发明人： Yasunori Nakajima ,  Yusuke Mori

IPC分类号： C03C15/00

CPC分类号： B08B3/08 ,  B08B3/048

摘要： A method and apparatus for performing treatment of substrates with a treating liquid. A first storage unit stores an initial life count specifying an allowable number of treatments of substrates to be carried out with treating liquid after an entire liquid replacement with a new supply of the treating liquid; a second storage device stores a normal life count specifying an allowable number of treatments to be carried out with the treating liquid after reaching the initial life count and after a partial liquid replacement; and a control device repeats treatment of the substrates after the entire liquid replacement until the initial life count is reached; and after the initial life count has been reached and the partial liquid replacement has been made, repeats treatment of the substrates until the normal life count is reached, and makes the partial liquid replacement each succeeding time the normal life count is reached.

摘要翻译： 一种用处理液进行基材处理的方法和装置。 第一存储单元存储初始寿命数，其指定在处理液的新供应之后，在整个液体置换之后，用待处理液进行处理的基板的允许数量; 第二存储装置在达到初始寿命计数之后和在部分液体置换之后存储指定要用处理液进行的处理的允许数量的正常寿命计数; 并且控制装置在整个液体置换之后重复对基板的处理，直到达到初始寿命计数; 在达到初始寿命计数并进行部分液体置换之后，重复对基板的处理，直到达到正常寿命计数，并且在随后的时间达到正常寿命计数之后进行部分液体置换。

公开(公告)号：US08084281B2

公开(公告)日：2011-12-27

申请号：US12087048

申请日：2007-03-15

申请人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

发明人： Naoki Shibata ,  Koji Hirata ,  Shiro Yamazaki ,  Katsuhiro Imai ,  Makoto Iwai ,  Takatomo Sasaki ,  Yusuke Mori ,  Fumio Kawamura

IPC分类号： H01L21/00

CPC分类号： C30B9/10 ,  C30B19/02 ,  C30B19/063 ,  C30B29/403 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02661 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7783 ,  H01L29/7787 ,  H01L33/0075

摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.

摘要翻译： 本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个 选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。 在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。 在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度 在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

公开(公告)号：US07923229B2

公开(公告)日：2011-04-12

申请号：US11926918

申请日：2007-10-29

申请人： Tomohiro Tsuji ,  Toshihiro Mizukami ,  Aya Konishi ,  Yusuke Mori ,  Yukie Nakazawa

发明人： Tomohiro Tsuji ,  Toshihiro Mizukami ,  Aya Konishi ,  Yusuke Mori ,  Yukie Nakazawa

IPC分类号： C12N13/00

CPC分类号： G01N33/52 ,  G01N2015/1477

摘要： A method for classifying and counting leukocytes, which comprises steps of: staining cells in a sample obtained from a hematological sample by treatment with a hemolytic agent, with a fluorescent dye; introducing the sample containing the stained cells into a flow cytometer to measure first scattered light, second scattered light different from the first scattered light and fluorescence of the respective cells; obtaining scattered light peak intensities and scattered light widths of the respective cells based on the measured first scattered light, obtaining scattered light intensities of the respective cells based on the measured second scattered light, and obtaining fluorescence intensities of the respective cells based on the measured fluorescence light; classifying the cells into a first group and a second group based on the scattered light peak intensities and the scattered light widths, the first group including leukocytes and second group including platelet clumps; classifying the leukocytes included in the first group into at least lymphocytes, monocytes and granulocytes based on the scattered light intensities and the fluorescence intensities; and counting the classified lymphocytes, the classified monocytes and the classified granulocytes.

摘要翻译： 一种白细胞分类和计数方法，其特征在于包括以下步骤：用溶血剂用荧光染料染色从血液样品中获得的样品中的细胞; 将含有染色细胞的样品引入流式细胞仪中以测量第一散射光，与第一散射光不同的第二散射光和各细胞的荧光; 基于所测量的第一散射光获得各个单元的散射光峰强度和散射光宽度，基于测量的第二散射光获得各个单元的散射光强度，并且基于测量的荧光获得各个单元的荧光强度 光; 基于散射光峰强度和散射光宽度将细胞分类为第一组和第二组，第一组包括白细胞和第二组包括血小板聚集; 基于散射光强度和荧光强度，将第一组中包含的白细胞分类为至少淋巴细胞，单核细胞和粒细胞; 并对分类的淋巴细胞，分类的单核细胞和分类的粒细胞进行计数。

公开(公告)号：US20110048115A1

公开(公告)日：2011-03-03

申请号：US12197108

申请日：2008-08-22

申请人： MASAHIRO OTA ,  NORIAKI OYABU ,  HIROAKI ADACHI ,  MASAYUKI ABE ,  SEIZO MORITA ,  YUSUKE MORI ,  TAKATOMO SASAKI

发明人： MASAHIRO OTA ,  NORIAKI OYABU ,  HIROAKI ADACHI ,  MASAYUKI ABE ,  SEIZO MORITA ,  YUSUKE MORI ,  TAKATOMO SASAKI

IPC分类号： G01N1/00 ,  G01Q80/00

CPC分类号： G01Q30/14 ,  G01N1/36 ,  G02B21/33 ,  G02B21/34

摘要： A method for analyzing a sample in a liquid is provided, which is suitable for easily and reliably preventing a liquid for analysis from being evaporated. When the sample in the liquid is observed by using a scanning probe microscope (SPM), a sealing liquid (17) immiscible with a liquid for analysis (16) is filled around the liquid for analysis (16), in which a sample (13) and a probe (15) are immersed, so as to form a sealing state, in which the liquid for analysis (16) is isolated from an external gas. The SPM enables the probe (15) disposed on a front end of a cantilever (14) to approach a surface of the sample (13) immersed in the liquid, scans the surface of the sample, and detects an interaction between the sample (13) and the probe (15), thereby generating an image.

摘要翻译： 提供一种用于分析液体中的样品的方法，其适于容易且可靠地防止用于分析的液体蒸发。 当使用扫描探针显微镜（SPM）观察液体中的样品时，将用于分析的液体（16）不混溶的密封液体（17）填充在用于分析的液体（16）周围，其中样品（13 ）和探针（15），以便形成用于分析用液体（16）与外部气体隔离的密封状态。 SPM使得布置在悬臂（14）的前端上的探针（15）接近浸入液体中的样品（13）的表面，扫描样品的表面，并检测样品（13）之间的相互作用 ）和探头（15），从而产生图像。

公开(公告)号：US07794539B2

公开(公告)日：2010-09-14

申请号：US10599501

申请日：2005-03-31

申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Yasuhito Takahashi

发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Yasuhito Takahashi

IPC分类号： C30B9/00 ,  C30B30/04 ,  C30B28/06 ,  C30B11/00

CPC分类号： C30B9/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1092 ,  Y10T117/1096

摘要： A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for producing Group-III-element nitride crystals that includes a crystal growth process of subjecting a material solution containing a Group III element, nitrogen, and at least one of alkali metal and alkaline-earth metal to pressurizing and heating under an atmosphere of a nitrogen-containing gas so that the nitrogen and the Group III element in the material solution react with each other to grow crystals. The method further includes, prior to the crystal growth process, a material preparation process of preparing the material solution in a manner that under an atmosphere of a nitrogen-containing gas, at least one of an ambient temperature and an ambient pressure is set so as to be higher than is set as a condition for the crystal growth process so that the nitrogen is allowed to dissolve in a melt containing the Group III element and the at least one of alkali metal and alkaline-earth metal. The method according to the present invention can be performed by using, for example, the producing apparatus shown in FIG. 7.

摘要翻译： 一种生产III族元素的氮化物晶体的方法，其中获得了改善的生长速率并且可以在短时间内生长大量的高质量晶体，其中使用的制造装置以及使用该方法和装置得到的半导体元件 被提供。 该方法是生产III族元素氮化物晶体的方法，其包括使含有III族元素，氮和至少一种碱金属和碱土金属的材料溶液经受加压和加热的晶体生长过程 含氮气体的气氛使得材料溶液中的氮和III族元素彼此反应生长晶体。 该方法还包括在晶体生长过程之前，制备材料制备方法，该方法是在含氮气体的气氛中，将环境温度和环境压力中的至少一种设定为 高于设定为晶体生长过程的条件，使得氮能够溶解在含有III族元素和碱金属和碱土金属中的至少一种的熔体中。 根据本发明的方法可以通过使用例如图1所示的制造装置来执行。 7。