发明申请
US20050059229A1 Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same
失效
制造III族氮化物晶体衬底的方法,该方法中使用的蚀刻剂,III族氮化物晶体衬底以及包含该蚀刻剂的半导体器件
- 专利标题: Method of manufacturing Group III nitride crystal substrate, etchant used in the method, Group III nitride crystal substrate, and semiconductor device including the same
- 专利标题(中): 制造III族氮化物晶体衬底的方法,该方法中使用的蚀刻剂,III族氮化物晶体衬底以及包含该蚀刻剂的半导体器件
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申请号: US10911939申请日: 2004-08-04
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公开(公告)号: US20050059229A1公开(公告)日: 2005-03-17
- 发明人: Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Takatomo Sasaki , Fumio Kawamura
- 申请人: Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Takatomo Sasaki , Fumio Kawamura
- 申请人地址: JP Katano-shi 576-0033 JP Kadoma-shi 571-8501
- 专利权人: Yusuke Mori,MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人: Yusuke Mori,MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址: JP Katano-shi 576-0033 JP Kadoma-shi 571-8501
- 优先权: JP2003-288125 20030806
- 主分类号: C30B19/02
- IPC分类号: C30B19/02 ; C30B29/40 ; H01L21/20 ; H01L21/205 ; H01L21/208 ; H01L21/28 ; H01L21/304 ; H01L21/306
摘要:
The present invention provides a Group III nitride crystal substrate whose surface has concavities and convexities reduced in size. The surfaces with concavities and convexities, such as hillocks, pits and facets, of Group III nitride crystals are brought into contact with a melt and thereby the surfaces are subjected to meltback etching or mechanochemical polishing. The melt includes at least one of alkali metal and alkaline-earth metal. Thus a Group III nitride crystal substrate that has reduced strain and a reduced number of defects, which are caused through the processing, and is excellent in surface flatness is manufactured. Furthermore, by the use of the Group III nitride crystal substrate of the present invention, for instance, semiconductor devices of high performance can be obtained.
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