Mehtod for processing nitride semiconductor crystal surface and nitride semiconductor crystal obtained by such method
    1.
    发明申请
    Mehtod for processing nitride semiconductor crystal surface and nitride semiconductor crystal obtained by such method 审中-公开
    用于加工氮化物半导体晶体表面的Mehtod和通过这种方法获得的氮化物半导体晶体

    公开(公告)号:US20060012011A1

    公开(公告)日:2006-01-19

    申请号:US10535741

    申请日:2004-06-03

    IPC分类号: H01L21/28 H01L29/20

    摘要: A method of processing a surface of a nitride semiconductor crystal, wherein a surface of a nitride semiconductor crystal is brought into contact with a liquid containing at least Na, Li or Ca as a processing solution. In the method, the processing solution can be a liquid containing at least Na, having an Na content of 5-95 mol %. The processing solution can be a liquid containing at least Li, having an Li content of 5-100 mol %. A nitride semiconductor crystal having a maximum depth of a surface scratch of at most 0.01 μm or an average thickness of a damaged layer of at most 2 μm. Consequently, a method of processing a surface of a nitride semiconductor crystal with a decreased depth of a surface scratch or a decreased thickness of a damaged layer, and a nitride semiconductor crystal obtained with the method can be provided.

    摘要翻译: 一种处理氮化物半导体晶体的表面的方法,其中使氮化物半导体晶体的表面与至少含有Na,Li或Ca的液体作为处理溶液接触。 在该方法中,处理溶液可以是含有至少Na,Na含量为5-95mol%的液体。 处理液可以是含有Li含量为5〜100摩尔%的至少Li的液体。 具有至多0.01μm的表面划痕的最大深度或至多2μm的损伤层的平均厚度的氮化物半导体晶体。 因此,可以提供一种利用该方法获得的具有降低的表面划痕深度或损伤层厚度减小的氮化物半导体晶体的表面的处理方法。

    Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-Nitride Crystal Substrate and Semiconductor Device
    3.
    发明申请
    Group III-Nitride Crystal, Manufacturing Method Thereof, Group III-Nitride Crystal Substrate and Semiconductor Device 有权
    第III族氮化物晶体及其制造方法,III族氮化物晶体基板和半导体器件

    公开(公告)号:US20080022921A1

    公开(公告)日:2008-01-31

    申请号:US11628253

    申请日:2005-04-15

    摘要: A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

    摘要翻译: 一种制造III族氮化物晶体基板的方法,包括以下步骤:将含碱金属元素的物质,含III族元素的物质和含氮元素的物质引入反应器中,形成含有 至少反应器中的碱金属元素,III族元素和氮元素,以及来自熔体的生长III族氮化物晶体,其特征在于在干燥容器中处理含碱金属元素的物质,其中 至少在将含碱金属元素的物质引入反应器的步骤中,水分浓度被控制在至多1.0ppm。 可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法,以及III族氮化物半导体器件。

    Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device
    4.
    发明授权
    Group III-nitride crystal, manufacturing method thereof, group III-nitride crystal substrate and semiconductor device 有权
    III族氮化物晶体,其制造方法,III族氮化物晶体衬底和半导体器件

    公开(公告)号:US08038794B2

    公开(公告)日:2011-10-18

    申请号:US11628253

    申请日:2005-04-15

    IPC分类号: C30B29/38

    摘要: A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

    摘要翻译: 一种制造III族氮化物晶体基板的方法,包括以下步骤:将含碱金属元素的物质,含III族元素的物质和含氮元素的物质引入反应器中,形成含有 至少反应器中的碱金属元素,III族元素和氮元素,以及来自熔体的生长III族氮化物晶体,其特征在于在干燥容器中处理含碱金属元素的物质,其中 至少在将含碱金属元素的物质引入反应器的步骤中,水分浓度被控制在至多1.0ppm。 可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法,以及III族氮化物半导体器件。

    Group III-Nitride Crystal Substrate and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device
    5.
    发明申请
    Group III-Nitride Crystal Substrate and Manufacturing Method Thereof, and Group III-Nitride Semiconductor Device 审中-公开
    III族氮化物晶体基板及其制造方法和III-III族氮化物半导体器件

    公开(公告)号:US20070296061A1

    公开(公告)日:2007-12-27

    申请号:US11578242

    申请日:2005-03-30

    IPC分类号: H01L29/20 C03B17/00

    摘要: A method of manufacturing a group III-nitride crystal substrate including the steps of introducing an alkali-metal-element-containing substance, a group III-element-containing substance and a nitrogen-element-containing substance into a reactor, forming a melt containing at least the alkali metal element, the group III-element and the nitrogen element in the reactor, and growing group III-nitride crystal from the melt, and characterized by handling the alkali-metal-element-containing substance in a drying container in which moisture concentration is controlled to at most 1.0 ppm at least in the step of introducing the alkali-metal-element-containing substance into the reactor is provided. A group III-nitride crystal substrate attaining a small absorption coefficient and the method of manufacturing the same, as well as a group III-nitride semiconductor device can thus be provided.

    摘要翻译: 一种制造III族氮化物晶体基板的方法,包括以下步骤:将含碱金属元素的物质,含III族元素的物质和含氮元素的物质引入反应器中,形成含有 至少反应器中的碱金属元素,III族元素和氮元素,以及来自熔体的生长III族氮化物晶体,其特征在于在干燥容器中处理含碱金属元素的物质,其中 至少在将含碱金属元素的物质引入反应器的步骤中,水分浓度被控制在至多1.0ppm。 可以提供获得小吸收系数的III族氮化物晶体基板及其制造方法,以及III族氮化物半导体器件。

    Method of manufacturing group-III nitride crystal
    8.
    发明授权
    Method of manufacturing group-III nitride crystal 有权
    III族氮化物晶体的制造方法

    公开(公告)号:US07288151B2

    公开(公告)日:2007-10-30

    申请号:US10999338

    申请日:2004-11-29

    IPC分类号: C30B11/14

    摘要: There is provided a method of manufacturing a group-III nitride crystal in which a nitrogen plasma is brought into contact with a melt containing a group-III element and an alkali metal to grow the group-III nitride crystal. Furthermore, there is also provided a method of manufacturing a group-III nitride crystal in which the group-III nitride crystal is grown on a substrate placed in a melt containing a group-III element and an alkali metal, with a minimal distance between a surface of the melt and a surface of the substrate set to be at most 50 mm.

    摘要翻译: 提供了一种制造III族氮化物晶体的方法,其中使氮等离子体与含有III族元素和碱金属的熔体接触以生长III族氮化物晶体。 此外,还提供了一种III族氮化物晶体的制造方法,其中III族氮化物晶体在放置在含有III族元素和碱金属的熔体中的基板上生长,其中 熔体的表面和基板的表面设定为至多50mm。

    Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate
    10.
    发明授权
    Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate 有权
    单晶GaN衬底,生长单晶GaN的方法和制造单晶GaN衬底的方法

    公开(公告)号:US07534310B2

    公开(公告)日:2009-05-19

    申请号:US11434744

    申请日:2006-05-17

    IPC分类号: C30B29/38

    摘要: A low dislocation density GaN single crystal substrate is made by forming a seed mask having parallel stripes regularly and periodically aligning on an undersubstrate, growing a GaN crystal on a facet-growth condition, forming repetitions of parallel facet hills and facet valleys rooted upon the mask stripes, maintaining the facet hills and facet valleys, producing voluminous defect accumulating regions (H) accompanying the valleys, yielding low dislocation single crystal regions (Z) following the facets, making C-plane growth regions (Y) following flat tops between the facets, gathering dislocations on the facets into the valleys by the action of the growing facets, reducing dislocations in the low dislocation single crystal regions (Z) and the C-plane growth regions (Y), and accumulating the dislocations in cores (S) or interfaces (K) of the voluminous defect accumulating regions (H).

    摘要翻译: 低位错密度GaN单晶衬底通过形成具有平行条纹的种子掩模,并且定期地在下衬底上周期性地对准,在面生长条件下生长GaN晶体,形成平行的小平面重叠和基于掩模的小平面谷 条纹,保持小平面山丘和小平面谷,产生伴随谷的大量缺陷积聚区域(H),产生小面后的低位错单晶区域(Z),使平面生长区域(Y)在平面之后 通过生长小面的作用将小面上的面陷入谷中,减少低位错单晶区(Z)和C平面生长区(Y)中的位错,并在芯(S)或 大量缺陷积聚区(H)的界面(K)。