公开(公告)号：US10135392B2

公开(公告)日：2018-11-20

申请号：US15276940

申请日：2016-09-27

Applicant: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES

Inventor： Hongxiang Wei ,  Jiafeng Feng ,  Xiaoguang Zhang ,  Houfang Liu ,  Xiufeng Han

IPC: H03B15/00 ,  B82Y25/00 ,  H01F10/32 ,  H01L43/08 ,  H01F10/193

Abstract: The present invention relates to a spin torque oscillator with high power output and its applications. A spin torque oscillator may include a first magnetic reference layer having a fixed magnetization, a magnetic precession layer having a magnetization capable of precessing about an initial direction, and a first barrier layer interposed between the first magnetic reference layer and the magnetic precession layer. The first barrier layer is formed of an insulating material capable of inducing a negative differential resistance for the spin torque oscillator.

公开(公告)号：US20180006657A1

公开(公告)日：2018-01-04

申请号：US15276940

申请日：2016-09-27

Applicant: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES

Inventor： Hongxiang Wei ,  Jiafeng Feng ,  Xiaoguang Zhang ,  Houfang Liu ,  Xiufeng Han

IPC: H03L7/26 ,  H01L43/08

CPC classification number: H03B15/006 ,  B82Y25/00 ,  H01F10/193 ,  H01F10/3254 ,  H01F10/329 ,  H01L43/08

Abstract: The present invention relates to a spin torque oscillator with high power output and its applications. A spin torque oscillator may include a first magnetic reference layer having a fixed magnetization, a magnetic precession layer having a magnetization capable of precessing about an initial direction, and a first barrier layer interposed between the first magnetic reference layer and the magnetic precession layer. The first barrier layer is formed of an insulating material capable of inducing a negative differential resistance for the spin torque oscillator.

公开(公告)号：US09559295B2

公开(公告)日：2017-01-31

申请号：US14345655

申请日：2012-09-19

Applicant: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES

Inventor： Xiu-Feng Han ,  Hou-Fang Liu ,  Syed Rizwan ,  Da-Lai Li ,  Peng Guo ,  Guo-Qiang Yu ,  Dong-Ping Liu ,  Yi-Ran Chen

IPC: G11C11/02 ,  H01L43/10 ,  H01L43/08 ,  G11C13/00 ,  G11C11/16 ,  H01L27/22 ,  H01L43/02 ,  H01F10/32 ,  H01F10/193

CPC classification number: H01L43/10 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/22 ,  G11C13/0002 ,  G11C13/003 ,  G11C13/0069 ,  G11C2213/51 ,  G11C2213/52 ,  G11C2213/53 ,  G11C2213/55 ,  H01F10/193 ,  H01F10/1936 ,  H01F10/3218 ,  H01F10/3272 ,  H01L27/22 ,  H01L27/224 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08

Abstract: A nano multilayer film of electrical field modulation type, a field effect transistor of electrical field modulation type, an electrical field sensor of switch type, and a random access memory of electrical field drive type can obtain an electro-resistance effect in an electrical field modulation multilayer film at room temperature. The nano multilayer film includes in succession from bottom to top a bottom layer, a substrate, a bottom layer, a functional layer, a buffer layer, an insulation layer, a conductive layer, and a cap layer. The buffer layer and the insulation layer can be selectively added as required when the conductive layer is made of a magnetic metal. The effect of influencing and changing the conductivity of the metal layer and thus adjusting the change in the resistance of the devices can obtain different resistance states corresponding to different electrical fields and achieving an electro-resistance effect.

Abstract translation: 电场调制型的纳米多层膜，电场调制型的场效应晶体管，开关型的电场传感器以及电场驱动型的随机存取存储器可以在电场调制中获得电阻效应 室温多层膜。 纳米多层膜从底部到顶部依次包括底层，基底，底层，功能层，缓冲层，绝缘层，导电层和盖层。 当导电层由磁性金属制成时，可根据需要选择性地添加缓冲层和绝缘层。 影响和改变金属层的导电性并由此调节器件的电阻变化的效果可以获得与不同电场相对应的不同的电阻状态并实现电阻效应。

公开(公告)号：US09558909B2

公开(公告)日：2017-01-31

申请号：US14395765

申请日：2014-05-06

Applicant: INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES

Inventor： Jianqi Li ,  Huanfang Tian ,  Gaolong Cao ,  Chao Ma ,  Huaixin Yang

IPC: H01J37/26 ,  H01J37/06 ,  H01J37/073 ,  H01J37/28

CPC classification number: H01J37/06 ,  H01J37/073 ,  H01J37/26 ,  H01J37/28 ,  H01J37/3178 ,  H01J2237/2802

Abstract: The present invention discloses a multifunctional ultrafast electron gun of a transmission electron microscopy. The ultrafast electron gun of a transmission electron microscope comprises: a laser source, an electron gun body and a laser introducing module. The electron gun body comprises: an electron gun sleeve comprising a first section sleeve and a second section sleeve; and, a cathode, an acceleration electrode and an anode arranged in up-down order, wherein the cathode and the acceleration electrode are located within the first section sleeve and the anode is located within the second section sleeve. The laser introducing module includes an introducing module sleeve sealedly connected between the first section sleeve and the second section sleeve and provided with a laser incoming window in a side thereof; and a laser reflective mirror located in the introducing module sleeve, which is configured to face right the laser incoming window and configured adjacent to a central axis of the introducing module sleeve, and the reflective face of which is configured to make an angle of 45° with the central axis of the introducing module sleeve. The multifunctional ultrafast electron gun of a transmission electron microscopy according to the present invention achieve the best coherence performance of the electrons obtained in the case of the photoelectron emission compared with those in the prior art.

Abstract translation: 本发明公开了一种透射电子显微镜的多功能超快电子枪。 透射电子显微镜的超快电子枪包括：激光源，电子枪体和激光引入模块。 电子枪主体包括：电子枪套筒，包括第一部分套筒和第二部分套筒; 阴极，加速电极和阳极，其以上下顺序排列，其中阴极和加速电极位于第一部分套筒内，阳极位于第二部分套筒内。 激光引入模块包括密封地连接在第一部分套筒和第二部分套筒之间并在其侧面设置有激光进入窗口的引导模块套筒; 以及位于所述引导模块套筒中的激光反射镜，所述激光反射镜被配置为面对所述激光入射窗口的右侧并且被配置成与所述引入模块套筒的中心轴线相邻，并且其反射面被配置为形成45°的角度 与引入模块套筒的中心轴线。 与现有技术相比，根据本发明的透射电子显微镜的多功能超快电子枪实现了在光电子发射的情况下获得的电子的最佳相干性能。

公开(公告)号：US09537195B2

公开(公告)日：2017-01-03

申请号：US14581483

申请日：2014-12-23

Applicant: Institute of Physics, Chinese Academy of Sciences ,  Beijing Huarong Tianchuang Superconduct Technology Development Co., Ltd. ,  University of Science and Technology Beijing ,  O.Ya. Usikov Institute for Radiophysics and Electronics, National Academy of Sciences of Ukraine

Inventor： Liang Sun ,  Xu Wang ,  Jia Wang ,  Yun Wu ,  Yusheng He ,  Hong Li ,  Jiangming Huang ,  Sheng Luo ,  Valerii Skresanov ,  Oleksandr Barannyk ,  Volodymyr Glamazdin ,  Volodymyr Zolotarev ,  Myhaylo Natarov ,  Mykola Cherpak ,  Oleksandr Shubnyj

IPC: H01P1/207 ,  H01P5/10 ,  H01P1/201

CPC classification number: H01P1/207 ,  H01P1/2016 ,  H01P5/1007

Abstract: A band-pass filter having a body, a rectangular waveguide, and a dielectric insert, the dielectric insert has a dielectric plate and a high temperature superconductive film in line with a plurality of rectangular windows of the same height. The waveguide has a×b cross-section, a being length of the long side walls and b the length of the short side walls. Each long side wall has a fixing groove at the central portion and a rectangular recess in the fixing groove. The dielectric plate has two ends in the fixing grooves and is symmetric with a perpendicular bisecting plane of the long side wall. The rectangular recess is symmetric to the perpendicular bisecting plane and has the same length as that of the waveguide, with its width w satisfying t

Abstract translation: 具有主体，矩形波导和电介质插入件的带通滤波器，电介质插入件具有与多个相同高度的矩形窗口对齐的电介质板和高温超导膜。 波导具有×b横截面，长侧壁的长度和b是短侧壁的长度。 每个长侧壁在中心部分具有固定槽，并且在固定槽中具有矩形凹槽。 电介质板在固定槽中具有两端，与长边壁的垂直平分平面对称。 矩形凹槽与垂直平分平面对称，并且具有与波导相同的长度，其宽度w满足t

公开(公告)号：US09394624B2

公开(公告)日：2016-07-19

申请号：US14055853

申请日：2013-10-16

Applicant: Tsinghua University ,  Institute of Physics, Chinese Academy of Sciences

Inventor： Qi-Kun Xue ,  Ke He ,  Xu-Cun Ma ,  Xi Chen ,  Li-Li Wang ,  Cui-Zu Chang ,  Xiao Feng ,  Yao-Yi Li ,  Jin-Feng Jia

IPC: C30B23/02 ,  C30B25/18 ,  H01L43/14 ,  C30B23/00

CPC classification number: C30B25/186 ,  C30B23/002 ,  C30B23/025 ,  H01L43/14

Abstract: A method for forming a topological insulator structure is provided. A strontium titanate substrate having a surface (111) is used. The surface (111) of the strontium titanate substrate is cleaned by heat-treating the strontium titanate substrate in the molecular beam epitaxy chamber. The strontium titanate substrate is heated and Bi beam, Sb beam, Cr beam, and Te beam are formed in the molecular beam epitaxy chamber in a controlled ratio achieved by controlling flow rates of the Bi beam, Sb beam, Cr beam, and Te beam. The magnetically doped topological insulator quantum well film is formed on the surface (111) of the strontium titanate substrate. The amount of the hole type charge carriers introduced by the doping with Cr is substantially equal to the amount of the electron type charge carriers introduced by the doping with Bi.

Abstract translation: 提供一种用于形成拓扑绝缘体结构的方法。 使用具有表面（111）的钛酸锶基材。 钛酸锶基体的表面（111）通过对分子束外延室中的钛酸锶基材进行热处理来清洗。 加热钛酸锶基片，并通过控制Bi光束，Sb光束，Cr光束和Te光束的流速以控制的比例在分子束外延室中形成Bi光束，Sb光束，Cr光束和Te光束。 。 磁性掺杂拓扑绝缘体量子阱膜形成在钛酸锶基体的表面（111）上。 通过掺杂Cr引入的空穴型电荷载流子的量基本上等于通过掺杂Bi引入的电子型电荷载流子的量。

公开(公告)号：US09349946B2

公开(公告)日：2016-05-24

申请号：US14055846

申请日：2013-10-16

Applicant: Tsinghua University ,  Institute of Physics, Chinese Academy of Sciences

Inventor： Qi-Kun Xue ,  Ke He ,  Xu-Cun Ma ,  Xi Chen ,  Li-Li Wang ,  Ya-Yu Wang ,  Li Lv ,  Cui-Zu Chang ,  Xiao Feng

IPC: H01L21/00 ,  H01L43/14 ,  H01L43/06

CPC classification number: H01L43/14 ,  H01L43/065

Abstract: A method for generating quantum anomalous Hall effect is provided. A topological insulator quantum well film in 3QL to 5QL is formed on an insulating substrate. The topological insulator quantum well film is doped with a first element and a second element to form the magnetically doped topological insulator quantum well film. The doping of the first element and the second element respectively introduce hole type charge carriers and electron type charge carriers in the magnetically doped topological insulator quantum well film, to decrease the carrier density of the magnetically doped topological insulator quantum well film to be smaller than or equal to 1×1013 cm−2. One of the first element and the second element magnetically dopes the topological insulator quantum well film. An electric field is applied to the magnetically doped topological insulator quantum well film to decrease the carrier density.

Abstract translation: 提供了一种产生量子异常霍尔效应的方法。 在绝缘基板上形成3QL至5QL中的拓扑绝缘体量子阱膜。 拓扑绝缘体量子阱膜掺杂有第一元素和第二元素以形成磁掺杂拓扑绝缘子量子阱膜。 第一元件和第二元件的掺杂在磁性掺杂拓扑绝缘子量子阱膜中分别引入孔型电荷载流子和电子型电荷载流子，以将磁性掺杂拓扑绝缘体量子阱膜的载流子密度降低到或小于 等于1×1013 cm-2。 第一元素和第二元素之一磁性掺杂拓扑绝缘体量子阱膜。 将电场施加到磁性掺杂拓扑绝缘体量子阱膜以降低载流子密度。

公开(公告)号：US20140179026A1

公开(公告)日：2014-06-26

申请号：US14055846

申请日：2013-10-16

Applicant: Institute of Physics, Chinese Academy of Sciences ,  Tsinghua University

Inventor： QI-KUN XUE ,  KE HE ,  XU-CUN MA ,  XI CHEN ,  LI-LI WANG ,  YA-YU WANG ,  LI LV ,  CUI-ZU CHANG ,  XIAO FENG

IPC: H01L43/14 ,  H01L43/06

CPC classification number: H01L43/14 ,  H01L43/065

Abstract: A method for generating quantum anomalous Hall effect is provided. A topological insulator quantum well film in 3QL to 5QL is formed on an insulating substrate. The topological insulator quantum well film is doped with a first element and a second element to form the magnetically doped topological insulator quantum well film. The doping of the first element and the second element respectively introduce hole type charge carriers and electron type charge carriers in the magnetically doped topological insulator quantum well film, to decrease the carrier density of the magnetically doped topological insulator quantum well film to be smaller than or equal to 1×1013cm−2. One of the first element and the second element magnetically dopes the topological insulator quantum well film. An electric field is applied to the magnetically doped topological insulator quantum well film to decrease the carrier density.

Abstract translation: 提供了一种产生量子异常霍尔效应的方法。 在绝缘基板上形成3QL至5QL中的拓扑绝缘体量子阱膜。 拓扑绝缘体量子阱膜掺杂有第一元素和第二元素以形成磁掺杂拓扑绝缘子量子阱膜。 第一元件和第二元件的掺杂在磁性掺杂拓扑绝缘子量子阱膜中分别引入孔型电荷载流子和电子型电荷载流子，以将磁性掺杂拓扑绝缘子量子阱膜的载流子密度降低到或小于 等于1×1013cm-2。 第一元素和第二元素之一磁性掺杂拓扑绝缘体量子阱膜。 将电场施加到磁性掺杂拓扑绝缘体量子阱膜以降低载流子密度。

公开(公告)号：US20240120923A1

公开(公告)日：2024-04-11

申请号：US18482141

申请日：2023-10-06

Applicant: Institute of Physics, Chinese Academy of Sciences

Inventor： Xiufeng HAN ,  Caihua WAN ,  Mingkun ZHAO ,  Ran ZHANG

IPC: H03K19/18 ,  G06F7/46 ,  G11C11/16 ,  H01F10/32 ,  H03K19/21

CPC classification number: H03K19/18 ,  G06F7/461 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3254 ,  H03K19/21

Abstract: Provided are a spin logic device based on a magnetic tunnel junction and an electronic apparatus comprising the same. According to an embodiment, the spin logic device may comprise: a current wiring; a magnetic tunnel junction, which comprises a free magnetic layer, a fixed magnetic layer, and a potential barrier layer located therebetween, which are stacked on the current wiring; and a current source for providing an input current to the current wiring, wherein the input current comprises a first, a second, and a third in-plane currents, directions of which are different from a direction of a magnetization axis of the free magnetic layer or there is a vertical component in that direction, and the first and the second in-plane currents are logical input currents while the third in-plane current is used to control the implementation mode of the spin logic device.

公开(公告)号：US11937513B2

公开(公告)日：2024-03-19

申请号：US17079422

申请日：2020-10-24

Applicant: Institute of Physics, Chinese Academy of Sciences

Inventor： Xiufeng Han ,  Ping Tang ,  Chenyang Guo ,  Caihua Wan

IPC: H10N50/80 ,  H01F10/32 ,  H10N50/10 ,  H10N50/85

CPC classification number: H10N50/80 ,  H01F10/32 ,  H10N50/10 ,  H10N50/85

Abstract: The present disclosure relates to a magnon spin valve device, a magnon sensor, a magnon field effect transistor, a magnon tunnel junction and a magnon memory. A magnon spin valve device may comprise a first ferromagnetic insulation layer, a non-magnetic conductive layer disposed on the first ferromagnetic insulation layer, and a second ferromagnetic insulation layer disposed on the non-magnetic conductive layer.