摘要:
The present invention provides nucleic acid amplification systems and methods that desirably reduce or eliminate false positive amplification signals resulting from contaminating biological material, e.g., nucleic acid, that may be present in one or more reagents used in an amplification reaction and/or that may be present in the environment in which an amplification reaction is performed. The invention offers the further advantage of requiring less stringent purification and/or sterility efforts than conventionally needed in order to ensure that enzymes and other reagents used in amplification reactions, and the environment in which an amplification reaction is performed, are free of bacterial or other nucleic acid contamination that may yield false positive results.
摘要:
In its broad aspect, the invention provides a method for analyzing relationships among patterns within a data set having a set of samples and associated attribute values defining each attribute of each said sample. The method comprises receiving at an input at least two patterns; defining a data cluster within the data set for each of said at least two patterns, each defined data cluster having samples with attribute values associated with a corresponding pattern of said at least two patterns; grouping at least some of the samples of each defined data cluster with one another to generate a resultant data cluster; and calculating a variation between the attribute values of a first set of samples and the attribute values of a second set of samples within said resultant data cluster, the attribute values of the first set of samples and the second set of samples corresponding to the same attribute.
摘要:
A phase change memory device includes a memory cell, first word line conductor and a second word line conductor, and first and second access devices responsive to the first and second word line conductors respectively. Control circuits are arranged to access the memory cell for read operations using only the first word line conductor to establish a current path from the bit line through the memory cell to a source line through the first access device, and to access the memory cell for operations to reset the memory cell using both the first and second access devices to establish a current path from the bit line through the memory cell to two source lines.
摘要:
Kits for amplifying DNA which include a priming oligonucleotide that hybridizes to a 3′-end of a DNA target sequence, a displacer oligonucleotide that hybridizes to a target nucleic acid containing the DNA target sequence at a position upstream from the priming oligonucleotide, and a promoter oligonucleotide that includes a region that hybridizes to a 3′-region of a DNA primer extension product that includes the priming oligonucleotide and a promoter for an RNA polymerase. The priming oligonucleotide does not include an RNA region that hybridizes to the target nucleic acid and is selectively degraded by an enzyme activity when hybridized to the target nucleic acid. The kits do not include a restriction endonuclease and oligonucleotides that include a promoter for an RNA polymerase are all modified to prevent the initiation of DNA synthesis therefrom.
摘要:
A phase change memory device includes a memory cell, first word line conductor and a second word line conductor, and first and second access devices responsive to the first and second word line conductors respectively. Control circuits are arranged to access the memory cell for read operations using only the first word line conductor to establish a current path from the bit line through the memory cell to a source line through the first access device, and to access the memory cell for operations to reset the memory cell using both the first and second access devices to establish a current path from the bit line through the memory cell to two source lines.
摘要:
The present invention is directed to novel methods of synthesizing multiple copies of a target nucleic acid sequence which are autocatalytic (i.e., able to cycle automatically without the need to modify reaction conditions such as temperature, pH, or ionic strength and using the product of one cycle in the next one). In particular, the present invention discloses a method of nucleic acid amplification which is robust and efficient, while reducing the appearance of side-products. The method uses only one primer, the “priming oligonucleotide,” a promoter oligonucleotide modified to prevent polymerase extension from its 3′-terminus and, optionally, a means for terminating a primer extension reaction, to amplify RNA or DNA molecules in vitro, while reducing or substantially eliminating the formation of side-products. The method of the present invention minimizes or substantially eliminates the emergence of side-products, thus providing a high level of specificity. Furthermore, the appearance of side-products can complicate the analysis of the amplification reaction by various molecular detection techniques. The present invention minimizes or substantially eliminates this problem, thus providing an enhanced level of sensitivity.
摘要:
The present invention provides nucleic acid amplification methods that desirably reduce or eliminate false positive amplification signals resulting from contaminating biological material, e.g., nucleic acid, that may be present in one or more reagents used in an amplification reaction and/or that may be present in the environment in which an amplification reaction is performed. The invention offers the further advantage of requiring less stringent purification and/or sterility efforts than conventionally needed in order to ensure that enzymes and other reagents used in amplification reactions, and the environment in which an amplification reaction is performed, are free of bacterial or other nucleic acid contamination that may yield false positive results.
摘要:
Disclosed are a semiconductor structure and a method that allow for simultaneous voltage/current conditioning of multiple memory elements in a nonvolatile memory device with multiple memory cells. The structure and method incorporate the use of a resistor connected in series with the memory elements to limit current passing through the memory elements. Specifically, the method and structure incorporate a blanket temporary series resistor on the wafer surface above the memory cells and/or permanent series resistors within the memory cells. During the conditioning process, these resistors protect the transition metal oxide in the individual memory elements from damage (i.e., burn-out), once it has been conditioned.
摘要:
A programmable link structure for use in three dimensional integration (3DI) semiconductor devices includes a via filled at least in part with a phase change material (PCM) and a heating device proximate the PCM. The heating device is configured to switch the conductivity of a transformable portion of the PCM between a lower resistance crystalline state and a higher resistance amorphous state. Thereby, the via defines a programmable link between an input connection located at one end thereof and an output connection located at another end thereof.
摘要:
Disclosed are non-volatile memory devices that incorporate a series of single or double memory cells. The single memory cells are essentially “U” shaped. The double memory cells comprise two essentially “U” shaped memory cells. Each memory cell comprises a memory element having a bi-stable layer sandwiched between two conductive layers. A temporary conductor may be applied to a series of cells and used to bulk condition the bi-stable layers of the cells. Also, due to the “U” shape of the cells, a cross point wire array may be used to connect a series of cells. The cross point wire array allows the memory elements of each cell to be individually identified and addressed for storing information and also allows for the information stored in the memory elements in all of the cells in the series to be simultaneously erased using a block erase process.