TAGGED OLIGONUCLEOTIDES AND THEIR USE IN NUCLEIC ACID AMPLIFICATION METHODS
    21.
    发明申请
    TAGGED OLIGONUCLEOTIDES AND THEIR USE IN NUCLEIC ACID AMPLIFICATION METHODS 有权
    标记的寡核苷酸及其在核酸扩增方法中的应用

    公开(公告)号:US20130029344A1

    公开(公告)日:2013-01-31

    申请号:US13612601

    申请日:2012-09-12

    IPC分类号: C12Q1/68 C12N9/12

    摘要: The present invention provides nucleic acid amplification systems and methods that desirably reduce or eliminate false positive amplification signals resulting from contaminating biological material, e.g., nucleic acid, that may be present in one or more reagents used in an amplification reaction and/or that may be present in the environment in which an amplification reaction is performed. The invention offers the further advantage of requiring less stringent purification and/or sterility efforts than conventionally needed in order to ensure that enzymes and other reagents used in amplification reactions, and the environment in which an amplification reaction is performed, are free of bacterial or other nucleic acid contamination that may yield false positive results.

    摘要翻译: 本发明提供了核酸扩增系统和方法,其期望地减少或消除由可能存在于扩增反应中使用的一种或多种试剂中的生物材料例如核酸引起的假阳性扩增信号和/或可能是 存在于进行扩增反应的环境中。 本发明提供了进一步的优点,即需要比常规所需的更少的纯化和/或不育努力,以确保用于扩增反应的酶和其它试剂以及进行扩增反应的环境不含细菌或其它 可能产生假阳性结果的核酸污染物。

    System and method for detecting and analyzing pattern relationships
    22.
    发明授权
    System and method for detecting and analyzing pattern relationships 有权
    用于检测和分析模式关系的系统和方法

    公开(公告)号:US07996404B2

    公开(公告)日:2011-08-09

    申请号:US12320538

    申请日:2009-01-28

    IPC分类号: G06F17/30

    CPC分类号: G06F17/30539 G06F17/30598

    摘要: In its broad aspect, the invention provides a method for analyzing relationships among patterns within a data set having a set of samples and associated attribute values defining each attribute of each said sample. The method comprises receiving at an input at least two patterns; defining a data cluster within the data set for each of said at least two patterns, each defined data cluster having samples with attribute values associated with a corresponding pattern of said at least two patterns; grouping at least some of the samples of each defined data cluster with one another to generate a resultant data cluster; and calculating a variation between the attribute values of a first set of samples and the attribute values of a second set of samples within said resultant data cluster, the attribute values of the first set of samples and the second set of samples corresponding to the same attribute.

    摘要翻译: 在其广泛的方面,本发明提供了一种用于分析具有一组样本的数据集中的模式之间的关系的方法,以及定义每个所述样本的每个属性的相关属性值。 该方法包括在输入端处接收至少两个图案; 为所述至少两个图案中的每一个定义数据集内的数据簇,每个定义的数据集具有具有与所述至少两个图案的对应图案相关联的属性值的样本; 将每个定义的数据集群的至少一些样本彼此分组以生成结果数据集群; 以及计算第一组样本的属性值与所述结果数据簇中第二组样本的属性值之间的变化,第一组样本的属性值和对应于相同属性的第二组样本 。

    Phase Change Memory With Dual Word Lines and Source Lines and Method of Operating Same
    23.
    发明申请
    Phase Change Memory With Dual Word Lines and Source Lines and Method of Operating Same 有权
    具有双字线和源极线的相变存储器及其操作方法相同

    公开(公告)号:US20100195378A1

    公开(公告)日:2010-08-05

    申请号:US12759479

    申请日:2010-04-13

    IPC分类号: G11C11/00

    摘要: A phase change memory device includes a memory cell, first word line conductor and a second word line conductor, and first and second access devices responsive to the first and second word line conductors respectively. Control circuits are arranged to access the memory cell for read operations using only the first word line conductor to establish a current path from the bit line through the memory cell to a source line through the first access device, and to access the memory cell for operations to reset the memory cell using both the first and second access devices to establish a current path from the bit line through the memory cell to two source lines.

    摘要翻译: 相变存储器件包括存储单元,第一字线导体和第二字线导体,以及分别响应于第一和第二字线导体的第一和第二存取器件。 控制电路被布置为仅使用第一字线导体访问存储器单元用于读取操作,以建立从位线到存储器单元到通过第一存取设备到源极线的电流路径,以及访问存储器单元以进行操作 使用第一和第二接入设备来复位存储器单元以建立从位线到存储器单元到两条源极线的电流路径。

    KITS FOR AMPLIFYING DNA
    24.
    发明申请
    KITS FOR AMPLIFYING DNA 有权
    用于放大DNA的试剂盒

    公开(公告)号:US20100159561A1

    公开(公告)日:2010-06-24

    申请号:US12716052

    申请日:2010-03-02

    IPC分类号: C12N9/12 C07H21/00

    摘要: Kits for amplifying DNA which include a priming oligonucleotide that hybridizes to a 3′-end of a DNA target sequence, a displacer oligonucleotide that hybridizes to a target nucleic acid containing the DNA target sequence at a position upstream from the priming oligonucleotide, and a promoter oligonucleotide that includes a region that hybridizes to a 3′-region of a DNA primer extension product that includes the priming oligonucleotide and a promoter for an RNA polymerase. The priming oligonucleotide does not include an RNA region that hybridizes to the target nucleic acid and is selectively degraded by an enzyme activity when hybridized to the target nucleic acid. The kits do not include a restriction endonuclease and oligonucleotides that include a promoter for an RNA polymerase are all modified to prevent the initiation of DNA synthesis therefrom.

    摘要翻译: 用于扩增DNA的试剂盒,其包含与DNA靶序列的3'端杂交的引物寡核苷酸,与引物寡核苷酸上游位置含有DNA靶序列的靶核酸杂交的置换者寡核苷酸,以及启动子 包括与包含引发寡核苷酸的DNA引物延伸产物的3'区域和RNA聚合酶的启动子杂交的区域的寡核苷酸。 引发寡核苷酸不包括与靶核酸杂交的RNA区域,并且当与靶核酸杂交时被选择性地被酶活性降解。 试剂盒不包括限制性内切核酸酶,并且包括RNA聚合酶的启动子的寡核苷酸都被修饰以防止从其中开始DNA合成。

    PHASE CHANGE MEMORY WITH DUAL WORD LINES AND SOURCE LINES AND METHOD OF OPERATING SAME
    25.
    发明申请
    PHASE CHANGE MEMORY WITH DUAL WORD LINES AND SOURCE LINES AND METHOD OF OPERATING SAME 有权
    具有双字线和源线的相位改变记忆和操作方法

    公开(公告)号:US20090034323A1

    公开(公告)日:2009-02-05

    申请号:US11833143

    申请日:2007-08-02

    IPC分类号: G11C11/00

    摘要: A phase change memory device includes a memory cell, first word line conductor and a second word line conductor, and first and second access devices responsive to the first and second word line conductors respectively. Control circuits are arranged to access the memory cell for read operations using only the first word line conductor to establish a current path from the bit line through the memory cell to a source line through the first access device, and to access the memory cell for operations to reset the memory cell using both the first and second access devices to establish a current path from the bit line through the memory cell to two source lines.

    摘要翻译: 相变存储器件包括存储单元,第一字线导体和第二字线导体,以及分别响应于第一和第二字线导体的第一和第二存取器件。 控制电路被布置为仅使用第一字线导体访问存储器单元用于读取操作,以建立从位线到存储器单元到通过第一存取设备到源极线的电流路径,以及访问存储器单元以进行操作 使用第一和第二接入设备来复位存储器单元以建立从位线到存储器单元到两条源极线的电流路径。

    Single-primer nucleic acid amplification methods
    26.
    发明授权
    Single-primer nucleic acid amplification methods 有权
    单引物核酸扩增方法

    公开(公告)号:US07374885B2

    公开(公告)日:2008-05-20

    申请号:US11213519

    申请日:2005-08-26

    IPC分类号: C12Q1/68 C12P19/34

    摘要: The present invention is directed to novel methods of synthesizing multiple copies of a target nucleic acid sequence which are autocatalytic (i.e., able to cycle automatically without the need to modify reaction conditions such as temperature, pH, or ionic strength and using the product of one cycle in the next one). In particular, the present invention discloses a method of nucleic acid amplification which is robust and efficient, while reducing the appearance of side-products. The method uses only one primer, the “priming oligonucleotide,” a promoter oligonucleotide modified to prevent polymerase extension from its 3′-terminus and, optionally, a means for terminating a primer extension reaction, to amplify RNA or DNA molecules in vitro, while reducing or substantially eliminating the formation of side-products. The method of the present invention minimizes or substantially eliminates the emergence of side-products, thus providing a high level of specificity. Furthermore, the appearance of side-products can complicate the analysis of the amplification reaction by various molecular detection techniques. The present invention minimizes or substantially eliminates this problem, thus providing an enhanced level of sensitivity.

    摘要翻译: 本发明涉及合成目标核酸序列的多个拷贝的新型方法,所述目标核酸序列是自动催化的(即,能够自动循环而不需要修饰诸如温度,pH或离子强度的反应条件,并且使用一种 循环在下一个)。 特别地,本发明公开了一种鲁棒有效的核酸扩增方法,同时减少副产物的外观。 该方法仅使用一种引物,即引物寡核苷酸,经修饰的启动子寡核苷酸,用于防止聚合酶从其3'末端延伸,以及任选的终止引物延伸反应的手段,以在体外扩增RNA或DNA分子,同时 减少或基本上消除副产物的形成。 本发明的方法使副产物的出现最小化或基本上消除,从而提供高水平的特异性。 此外,副产物的出现可能通过各种分子检测技术使扩增反应的分析复杂化。 本发明使这个问题最小化或基本消除,从而提供了增强的灵敏度。

    Tagged oligonucleotides and their use in nucleic acid amplification methods
    27.
    发明申请
    Tagged oligonucleotides and their use in nucleic acid amplification methods 有权
    标记的寡核苷酸及其在核酸扩增方法中的应用

    公开(公告)号:US20070281317A1

    公开(公告)日:2007-12-06

    申请号:US11810834

    申请日:2007-06-06

    IPC分类号: C12Q1/68 C12P19/34

    摘要: The present invention provides nucleic acid amplification methods that desirably reduce or eliminate false positive amplification signals resulting from contaminating biological material, e.g., nucleic acid, that may be present in one or more reagents used in an amplification reaction and/or that may be present in the environment in which an amplification reaction is performed. The invention offers the further advantage of requiring less stringent purification and/or sterility efforts than conventionally needed in order to ensure that enzymes and other reagents used in amplification reactions, and the environment in which an amplification reaction is performed, are free of bacterial or other nucleic acid contamination that may yield false positive results.

    摘要翻译: 本发明提供了核酸扩增方法,其期望地减少或消除由污染生物材料(例如核酸)产生的假阳性扩增信号,所述核酸可以存在于用于扩增反应的一种或多种试剂中和/或可存在于 进行扩增反应的环境。 本发明提供了进一步的优点,即需要比常规所需的更少的纯化和/或不育努力,以确保用于扩增反应的酶和其它试剂以及进行扩增反应的环境不含细菌或其它 可能产生假阳性结果的核酸污染物。

    Simultaneous conditioning of a plurality of memory cells through series resistors
    28.
    发明申请
    Simultaneous conditioning of a plurality of memory cells through series resistors 审中-公开
    通过串联电阻同时调节多个存储单元

    公开(公告)号:US20070235811A1

    公开(公告)日:2007-10-11

    申请号:US11400596

    申请日:2006-04-07

    IPC分类号: H01L21/336

    摘要: Disclosed are a semiconductor structure and a method that allow for simultaneous voltage/current conditioning of multiple memory elements in a nonvolatile memory device with multiple memory cells. The structure and method incorporate the use of a resistor connected in series with the memory elements to limit current passing through the memory elements. Specifically, the method and structure incorporate a blanket temporary series resistor on the wafer surface above the memory cells and/or permanent series resistors within the memory cells. During the conditioning process, these resistors protect the transition metal oxide in the individual memory elements from damage (i.e., burn-out), once it has been conditioned.

    摘要翻译: 公开了一种半导体结构和方法,其允许在具有多个存储器单元的非易失性存储器件中同时对多个存储器元件进行电压/电流调节。 该结构和方法结合使用与存储器元件串联连接的电阻器来限制电流通过存储器元件。 具体地,该方法和结构在存储器单元上方的晶片表面上和/或存储器单元内的永久串联电阻器上并入一个橡皮布暂时串联电阻器。 在调节过程中,一旦调节了这些电阻,这些电阻就可以保护各个存储元件中的过渡金属氧化物免受损坏(即烧坏)。

    MEMORY DEVICE AND METHOD OF MANUFACTURING THE DEVICE BY SIMULTANEOUSLY CONDITIONING TRANSITION METAL OXIDE LAYERS IN A PLURALITY OF MEMORY CELLS
    30.
    发明申请
    MEMORY DEVICE AND METHOD OF MANUFACTURING THE DEVICE BY SIMULTANEOUSLY CONDITIONING TRANSITION METAL OXIDE LAYERS IN A PLURALITY OF MEMORY CELLS 有权
    存储器件和通过在大量存储器单元中同时调节过渡金属氧化物层来制造器件的方法

    公开(公告)号:US20070212810A1

    公开(公告)日:2007-09-13

    申请号:US11748579

    申请日:2007-05-15

    IPC分类号: H01L21/00

    摘要: Disclosed are non-volatile memory devices that incorporate a series of single or double memory cells. The single memory cells are essentially “U” shaped. The double memory cells comprise two essentially “U” shaped memory cells. Each memory cell comprises a memory element having a bi-stable layer sandwiched between two conductive layers. A temporary conductor may be applied to a series of cells and used to bulk condition the bi-stable layers of the cells. Also, due to the “U” shape of the cells, a cross point wire array may be used to connect a series of cells. The cross point wire array allows the memory elements of each cell to be individually identified and addressed for storing information and also allows for the information stored in the memory elements in all of the cells in the series to be simultaneously erased using a block erase process.

    摘要翻译: 公开了包含一系列单个或双重存储器单元的非易失性存储器件。 单个存储器单元基本上是“U”形的。 双重存储单元包括两个基本上“U”形的存储单元。 每个存储单元包括具有夹在两个导电层之间的双稳态层的存储元件。 临时导体可以应用于一系列的电池并且用于批量地调节电池的双稳态层。 此外,由于电池的“U”形状,可以使用交叉点线阵列来连接一系列电池。 交叉点线阵列允许每个单元的存储元件被单独识别和寻址用于存储信息,并且还允许使用块擦除处理同时擦除存储在串联中的所有单元中的存储器元件中的信息。