摘要:
The present invention provides compositions, kits and methods for the selective hybridization and capture of a specific target nucleic acid. The specific target nucleic acid may be present in a heterogeneous mixture of nucleic acids. Selective hybridization and capture provides a target nucleic acid that is substantially free of non-target and/or contaminating nucleic acids. Target nucleic acids that have been selectively hybridized and captured using the current invention are then used in subsequent analysis, wherein the presence of non-target and/or contaminating nucleic acids that interfere with said subsequent analysis have been substantially reduced or eliminated, thereby providing improved analysis results. The invention offers the further advantage of requiring less stringent purification and/or sterility efforts than conventionally needed in order to ensure that enzymes and other reagents used in subsequent analysis, or present in the environment in which an assay is performed, are free of bacterial or other contaminating nucleic acids.
摘要:
In a general aspect, a computer-readable storage medium stores instructions that when executed cause a processor to perform a process. The instructions can include instructions to transmit video data of a remote desktop session to a client via a first data channel using a first protocol. The instructions can also include instructions to transmit event data of the remote desktop session to the client via a second data channel using a second protocol, the second protocol being different than the first protocol.
摘要:
Embodiments disclosed herein provide systems and methods for performing video recorder failover. In a particular embodiment, a system includes a first Network Video Recorder (NVR) configured to receive a video stream and record the video stream to a first long-term storage. The system further includes a second NVR configured to receive the video stream and temporarily stores an amount of the video stream in temporary storage. In response to a detection of a failure of the first NVR, the second NVR is configured to record the video stream to the second long-term storage and transfer at least a portion of the video stream stored in the temporary storage corresponding to the amount of time between detection of the failure and when the second NVR began recording the video stream to the second long-term storage.
摘要:
The present invention provides kits containing tagged oligonucleotides for use in certain nucleic acid amplification methods to desirably reduce or eliminate false positive amplification signals resulting from contaminating biological material, e.g., nucleic acid, that may be present in one or more reagents used in an amplification reaction and/or that may be present in the environment in which an amplification reaction is performed. The kits containing tagged oligonucleotides can be used in purification and/or sterility efforts under less stringent conditions than conventionally needed to reduce or eliminate false positive results in a nucleic acid amplification method.
摘要:
In one general aspect, a computer-readable storage medium can store instructions that when executed cause a client device to perform a process. The instructions comprising instructions to define a plurality of event packets where each event packet from the plurality of event packets includes an input value from a user interface device associated with the client device, and instructions to define, at a first time, a first carrier packet including the plurality of event packets. The instructions can also include instructions to define an additional event packet representing an additional input value from the user interface device associated with the client device, and define, at a second time, a second carrier packet including the additional event packet and at least a portion of the plurality of event packets.
摘要:
Kits for amplifying DNA which include a priming oligonucleotide that hybridizes to a 3′-end of a DNA target sequence, a displacer oligonucleotide that hybridizes to a target nucleic acid containing the DNA target sequence at a position upstream from the priming oligonucleotide, and a promoter oligonucleotide that includes a region that hybridizes to a 3′-region of a DNA primer extension product that includes the priming oligonucleotide and a promoter for an RNA polymerase. The priming oligonucleotide does not include an RNA region that hybridizes to the target nucleic acid and is selectively degraded by an enzyme activity when hybridized to the target nucleic acid. The kits do not include a restriction endonuclease and oligonucleotides that include a promoter for an RNA polymerase are all modified to prevent the initiation of DNA synthesis therefrom.
摘要:
Disclosed are methods for selective amplification of target nucleic acid sequence using a tagged oligonucleotide comprising a target hybridizing sequence that hybridizes to a 3′-end of the target nucleic acid and a tag sequence situated 5′ to the target hybridizing sequence. The tagged oligonucleotide is hybridized to the target nucleic acid and, after reducing the effective concentration of unhybridized tagged oligonucleotide having an active form, a primer extension reaction is initiated to produce a primer extension product. Further amplification also utilizes a first oligonucleotide that hybridizes to the 3′ end of the complement of the target nucleic acid and a second oligonucleotide that hybridizes to the complement of the tag sequence. Also disclosed are reaction mixtures for use in the disclosed methods comprising the tagged oligonucleotide hybridized to target nucleic and substantially free of an active form of unhybridized tagged oligonucleotide.
摘要:
An integrated circuit and method for fabrication includes first and second structures, each including a set of sub-lithographic lines, and contact landing segments connected to at least one of the sub-lithographic lines at an end portion. The first and second structures are nested such that the sub-lithographic lines are disposed in a parallel manner within a width, and the contact landing segments of the first structure are disposed on an opposite side of a length of the sub-lithographic lines relative to the contact landing segments of the second structure. The contact landing segments for the first and second structures are included within the width dimension, wherein the width includes a dimension four times a minimum feature size achievable by lithography.
摘要:
A memory module including a volatile memory, a non-volatile memory, and a controller that provides address, data, and control interfaces to the memories and to a host system, such as, for example, a personal computer, is operable to interact with the host system so as to provide one or more additional layers in the memory hierarchy of the host system. In one aspect of the present invention the controller operates the volatile memory of the memory module as a cache for the non-volatile memory of the memory module. In another aspect of the present invention data representing one or more software applications and/or one or more data sets are stored in the non-volatile memory of the memory module along with security information such that a host system may quickly launch applications from the memory module rather than from a slower hard disk drive.
摘要:
The present invention provides a method of forming an ultra-thin and uniform layer of Si including the steps of providing a substrate having semiconducting regions separated by insulating regions; implanting dopants into the substrate to provide an etch differential doped portion in the semiconducting regions underlying an upper Si-containing surface of the semiconducting regions; forming a trench in the substrate including the semiconducting regions and the insulating regions; removing the etch differential doped portion from the semiconductor regions to produce a cavity underlying the upper surface of the semiconducting regions; and filling the trench with a trench dielectric, wherein the trench dielectric material encloses the cavity underlying the upper Si-containing surface of the semiconducting regions. The upper Si-containing surface of the semiconducting regions has a uniform thickness of less than about 100 Å.