公开(公告)号：US20200346967A1

公开(公告)日：2020-11-05

申请号：US16930480

申请日：2020-07-16

Applicant: Corning Incorporated

Inventor： Lars Martin Otfried Brusberg ,  Davide Domenico Fortusini

IPC: C03C4/00 ,  C03C4/18 ,  C03C3/091 ,  C03C3/093 ,  C03C3/083 ,  C03C3/085 ,  C03C3/087 ,  G02B6/134 ,  C03C21/00

Abstract: The low-loss ion exchanged (IOX) waveguide disclosed herein includes a glass substrate having a top surface and comprising an alkali-aluminosilicate glass with between 3 and 15 mol % of Na2O and a concentration of Fe of 20 parts per million (ppm) or less. The glass substrate includes a buried Ag—Na IOX region, wherein this region and a surrounding portion of glass substrate define the IOX waveguide. The IOX waveguide has an optical loss OL≤0.05 dB/cm and a birefringence magnitude |B|≤0.001. The glass substrate with multiple IOX waveguides can be used as an optical backplane for systems having optical functionality and can find use in data center and high-performance data transmission applications.

公开(公告)号：US10601198B2

公开(公告)日：2020-03-24

申请号：US15450282

申请日：2017-03-06

Applicant: THE UNIVERSITY OF CONNECTICUT ,  Opel Solar, Inc.

Inventor： Geoff W. Taylor

IPC: H01S5/10 ,  H01L27/144 ,  H01L33/10 ,  H01L31/0352 ,  H01S5/343 ,  G02B6/134 ,  H01S5/042 ,  H01S5/062 ,  H01S5/20 ,  H01S5/30 ,  H01L29/66 ,  H01L29/74 ,  H01L21/8252 ,  H01L29/778 ,  H01L27/06 ,  H01L27/085 ,  H01L31/111 ,  H01S5/022 ,  H01S5/125 ,  H01L29/08 ,  H01L29/15 ,  H01L29/36 ,  H01L33/06 ,  H01S5/183 ,  H01S5/187 ,  G02B6/13 ,  G02B6/293 ,  H01L31/0232 ,  H01L31/0304 ,  H01L31/11 ,  H01L31/112 ,  H01L31/18 ,  H01S5/0625 ,  H01S5/22 ,  H01L29/10

Abstract: A Dual-wavelength hybrid (DWH) device includes an n-type ohmic contact layer, cathode and anode terminal electrodes, first and second injector terminal electrodes, p-type and n-type modulation doped QW structures, and first through sixth ion implant regions. The first injector terminal electrode is formed on the third ion implant region that contacts the p-type modulation doped QW structure and the second injector terminal electrode is formed on the fourth ion implant region that contacts the n-type modulation doped QW structure. The DWH device operates in at least one of a vertical cavity mode and a whispering gallery mode. In the vertical cavity mode, the DWH device converts an in-plane optical mode signal to a vertical optical mode signal, whereas in the whispering gallery mode the DWH device converts a vertical optical mode signal to an in-plane optical mode signal.

公开(公告)号：US20200088943A1

公开(公告)日：2020-03-19

申请号：US16580298

申请日：2019-09-24

Applicant: University of Southampton

Inventor： Xia Chen ,  Milan Milosevic ,  Graham Trevor Reed ,  David John Thomson

IPC: G02B6/134 ,  C23C14/48 ,  G01M11/00

Abstract: The disclosure provides a method of forming an erasable optical coupler in a photonic device comprising a conventional optical waveguide formed in a crystalline wafer. The method comprises selectively implanting ions in a localized region of the wafer material adjacent to the conventional waveguide of the photonic device, to cause modification of the crystal lattice structure of, and a change in refractive index in, the ion implanted region of the wafer material to thereby form an ion implanted waveguide optically coupled to the adjacent conventional waveguide to couple light out therefrom, or in thereto. The crystalline wafer material and ion implanted waveguide are such that the crystal lattice structure or composition can be modified to adjust or remove the optical coupling with the conventional waveguide by further modification of the refractive index in the ion implanted region.

公开(公告)号：US20200057320A1

公开(公告)日：2020-02-20

申请号：US16609069

申请日：2018-04-12

Applicant: Ciena Corporation

Inventor： Christine Latrasse ,  Yves Painchaud ,  Michel Poulin

IPC: G02F1/025 ,  G02B6/134 ,  G02F1/225 ,  G02B6/12

Abstract: An optical modulator includes a first arm and a second arm, each arm includes an arrangement with an equal amount of p-doped material and an equal amount of n-doped material, such that mask misalignment causes a same effect in both arms; and each arm includes a plurality of segments where electrodes connect for push-pull operation of the first arm and the second arm.

公开(公告)号：US20180314083A1

公开(公告)日：2018-11-01

申请号：US15582050

申请日：2017-04-28

Applicant: Ciena Corporation

Inventor： Christine Latrasse ,  Yves Painchaud ,  Michel Poulin

IPC: G02F1/025 ,  G02B6/12 ,  G02F1/225 ,  G02B6/134

CPC classification number: G02F1/025 ,  G02B6/12002 ,  G02B6/134 ,  G02B2006/12061 ,  G02B2006/12142 ,  G02F1/2257 ,  G02F2001/0152 ,  G02F2001/212

Abstract: An optoelectronic integrated circuit includes (i) a first back-to-back-junction component (BBJC) and a second BBJC that conform to a first fabrication pattern, where the first BBJC includes a first A-type p-n junction (APNJ) in series with a first B-type p-n junction (BPNJ), where the second BBJC includes a second APNJ in series with a second BPNJ, and (ii) an optical component conforming to a second fabrication pattern that superimposes the first fabrication pattern. The APNJs and BPNJs may be identified based overlapping with separate arms of the optical component. The optical component overlaps the APNJs and BPNJs to provide modulation to optical signals using the modulation voltage from the electrodes. The first APNJ, the first BPNJ, the second APNJ, and the second BPNJ are disposed along respective directions, where metal bridges may be used, to reduce an imbalance in the modulation of the optical signals resulting from a fabrication misalignment.

公开(公告)号：US10101533B2

公开(公告)日：2018-10-16

申请号：US15826897

申请日：2017-11-30

Applicant: Elenion Technologies, LLC

Inventor： Ruizhi Shi ,  Michael J. Hochberg ,  Ari Jason Novack ,  Thomas Wetteland Baehr-Jones

IPC: G02B6/12 ,  G02B6/28 ,  G02B6/134 ,  G02B6/136 ,  G02B6/30 ,  G02B6/122

Abstract: An integrated optical device fabricated in the back end of line process located within the vertical span of the metal stack and having one or more advantages over a corresponding integrated optical device fabricated in the silicon on insulator layer.

公开(公告)号：US09864138B2

公开(公告)日：2018-01-09

申请号：US14987693

申请日：2016-01-04

Applicant: The Research Foundation for the State University of New York

Inventor： Douglas Coolbaugh ,  Thomas Adam ,  Gerald L. Leake

IPC: G02B6/13 ,  H01L31/105 ,  H01L21/02 ,  H01L27/146 ,  H01L31/028 ,  H01L21/203 ,  H01L21/205 ,  G02B6/12 ,  G02B6/132 ,  G02B6/134 ,  G02B6/136 ,  H01L31/0232

CPC classification number: G02B6/13 ,  G02B6/12002 ,  G02B6/132 ,  G02B6/1347 ,  G02B6/136 ,  G02B6/43 ,  G02B2006/121 ,  G02B2006/12104 ,  G02B2006/12123 ,  G02B2006/12169 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/2033 ,  H01L21/2053 ,  H01L27/14625 ,  H01L27/14629 ,  H01L31/022408 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/105 ,  H01L31/1808 ,  Y02E10/52 ,  Y02E10/547

Abstract: A photonic structure can include in one aspect one or more waveguides formed by patterning of waveguiding material adapted to propagate light energy. Such waveguiding material may include one or more of silicon (single-, poly-, or non-crystalline) and silicon nitride.

公开(公告)号：US20170336658A1

公开(公告)日：2017-11-23

申请号：US15584509

申请日：2017-05-02

Applicant: Acacia Communications, Inc.

Inventor： Long Chen

IPC: G02F1/025 ,  G02B6/134 ,  G02F1/015

CPC classification number: G02F1/025 ,  G02B6/00 ,  G02B6/134 ,  G02F2001/0156

Abstract: Disclosed are designs and methods of fabrication of silicon carrier-depletion based electro-optical modulators having doping configurations that produce modulators exhibiting desirable modulation efficiency, optical absorption loss and bandwidth characteristics. The disclosed method of fabrication of a modulator having such doping configurations utilizes counter doping to create narrow regions of relatively high doping levels near a waveguide center.

公开(公告)号：US09739943B2

公开(公告)日：2017-08-22

申请号：US15068547

申请日：2016-03-12

Applicant: Renesas Electronics Corporation

Inventor： Tatsuya Usami ,  Keiji Sakamoto ,  Hiroyuki Kunishima

IPC: G02B6/12 ,  G02B6/134 ,  G02B6/122 ,  G02F1/025 ,  G02B6/136 ,  H01L23/00

CPC classification number: G02B6/1347 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/136 ,  G02B2006/12061 ,  G02B2006/121 ,  G02F1/025 ,  H01L23/562

Abstract: A rectangular optical waveguide, an optical phase shifter and an optical modulator each formed of a semiconductor layer are formed on an insulating film constituting an SOI wafer, and then a rear insulating film formed on a rear surface of the SOI wafer is removed. Moreover, a plurality of trenches each having a first depth from an upper surface of the insulating film are formed at a position not overlapping with the rectangular optical waveguide, the optical phase shifter and the optical modulator when seen in a plan view in the insulating film. As a result, since an electric charge can be easily released from the SOI wafer even when the SOI wafer is later mounted on the electrostatic chuck included in the semiconductor manufacturing apparatus, the electric charge is less likely to be accumulated on the rear surface of the SOI wafer.

公开(公告)号：US20170222400A1

公开(公告)日：2017-08-03

申请号：US15450400

申请日：2017-03-06

Applicant: THE UNIVERSITY OF CONNECTICUT ,  Opel Solar, Inc.

Inventor： Geoff W. TAYLOR

IPC: H01S5/10 ,  G02B6/134 ,  G02B6/13 ,  H01S5/042 ,  H01S5/062 ,  H01L31/18 ,  H01S5/30 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/112 ,  H01L31/11 ,  H01L31/0232 ,  G02B6/293 ,  H01S5/20

CPC classification number: H01S5/1071 ,  G02B6/131 ,  G02B6/1347 ,  G02B6/29338 ,  H01L21/8252 ,  H01L27/0605 ,  H01L27/085 ,  H01L27/1443 ,  H01L29/083 ,  H01L29/1066 ,  H01L29/15 ,  H01L29/36 ,  H01L29/66401 ,  H01L29/74 ,  H01L29/7783 ,  H01L31/02327 ,  H01L31/03046 ,  H01L31/035209 ,  H01L31/035236 ,  H01L31/1105 ,  H01L31/1113 ,  H01L31/1129 ,  H01L31/1844 ,  H01L33/06 ,  H01L33/105 ,  H01S5/0228 ,  H01S5/0421 ,  H01S5/0424 ,  H01S5/0425 ,  H01S5/06203 ,  H01S5/06226 ,  H01S5/0625 ,  H01S5/1028 ,  H01S5/1032 ,  H01S5/1042 ,  H01S5/1075 ,  H01S5/125 ,  H01S5/183 ,  H01S5/187 ,  H01S5/2027 ,  H01S5/2063 ,  H01S5/2086 ,  H01S5/222 ,  H01S5/3054 ,  H01S5/309 ,  H01S5/34313

Abstract: A semiconductor device includes an n-type ohmic contact layer, cathode and anode electrodes, p-type and n-type modulation doped quantum well (QW) structures, and first and second ion implant regions. The anode electrode is formed on the first ion implant region that contacts the p-type modulation doped QW structure and the cathode electrode is formed by patterning the first and second ion implant regions and the n-type ohmic contact layer. The semiconductor device is configured to operate as at least one of a diode laser and a diode detector. As the diode laser, the semiconductor device emits photons. As the diode detector, the semiconductor device receives an input optical light and generates a photocurrent.