Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
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Application No.: US15068547Application Date: 2016-03-12
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Publication No.: US09739943B2Publication Date: 2017-08-22
- Inventor: Tatsuya Usami , Keiji Sakamoto , Hiroyuki Kunishima
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2015-067928 20150330
- Main IPC: G02B6/12
- IPC: G02B6/12 ; G02B6/134 ; G02B6/122 ; G02F1/025 ; G02B6/136 ; H01L23/00

Abstract:
A rectangular optical waveguide, an optical phase shifter and an optical modulator each formed of a semiconductor layer are formed on an insulating film constituting an SOI wafer, and then a rear insulating film formed on a rear surface of the SOI wafer is removed. Moreover, a plurality of trenches each having a first depth from an upper surface of the insulating film are formed at a position not overlapping with the rectangular optical waveguide, the optical phase shifter and the optical modulator when seen in a plan view in the insulating film. As a result, since an electric charge can be easily released from the SOI wafer even when the SOI wafer is later mounted on the electrostatic chuck included in the semiconductor manufacturing apparatus, the electric charge is less likely to be accumulated on the rear surface of the SOI wafer.
Public/Granted literature
- US20160293481A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2016-10-06
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