Composite, method for growth of ii{11 {14 vi{11 {0 compounds on substrates, and process for making composition for the compounds
    13.
    发明授权
    Composite, method for growth of ii{11 {14 vi{11 {0 compounds on substrates, and process for making composition for the compounds 失效
    复合材料,II的生长方法{11 {14} {11 {0化合物在基材上,以及制备化合物组合物的方法

    公开(公告)号:US3664866A

    公开(公告)日:1972-05-23

    申请号:US3664866D

    申请日:1970-04-08

    IPC分类号: H01L21/365 B44D1/18

    摘要: A composite comprises a substrate of monocrystalline structure which is either a hexagonal, cubic, rhombohedral or orthorhombic, and a monocrystalline layer on the substrate of a JQ compound formulation wherein J is at least one element selected from the group consisting of cadmium, zinc and mercury, and wherein Q is at least one element selected from the group consisting of sulfur, tellurium, selenium and/or oxygen. An alkyl or hydride type dopant may be used to provide a homogeneously doped layer. Processes for making the layer composition and for making the composite are described.

    摘要翻译: 复合材料包括单晶结构的基底,其为六方晶系,立方晶体,菱方晶或斜方晶,以及JQ化合物制剂的基材上的单晶层,其中J为选自镉,锌和汞的至少一种元素 ,并且其中Q是选自硫,碲,硒和/或氧的至少一种元素。 可以使用烷基或氢化物型掺杂剂来提供均匀掺杂的层。 描述了用于制备层组合物和制备复合材料的方法。

    Composites, of iib-via binary film compounds on iia-viia binary compound substrate crystals and process therefor
    14.
    发明授权
    Composites, of iib-via binary film compounds on iia-viia binary compound substrate crystals and process therefor 失效
    IIA-VIIA二元化合物基体上IIB-VIA二元膜化合物的复合物及其制备方法

    公开(公告)号:US3658582A

    公开(公告)日:1972-04-25

    申请号:US3658582D

    申请日:1970-04-13

    IPC分类号: H01L21/363 H01L3/00 H01L7/34

    摘要: A composite of a substrate crystal is disclosed having a compound of the JQ type formulation where J is at least one element of group IIa and Q is at least one element of group VIIa having a film compound formed on the substrate which is of the JQ type formulation where J is at least one element of the group IIb and Q is at least one element of the group VIa. The process for making these composites shows simple and easily controllable steps and provides criteria for obtaining desired film thickness at relatively rapid deposition rates.

    摘要翻译: 公开了具有JQ型配方的化合物的基材晶体的复合物,其中J是IIa族的至少一种元素,Q是具有形成在JQ型基板上的膜化合物的Ⅶa族的至少一种元素 其中J是组IIb中的至少一种元素,Q是组VIa的至少一种元素。 制备这些复合材料的方法显示出简单且易于控制的步骤,并提供了以相对快速的沉积速率获得所需膜厚度的标准。