Abstract:
An apparatus and a method to manipulate at least one beam of charged particles are provided. The apparatus comprises two rows of field source members 13 which are disposed periodically at a distance from each other such that there exist planes of symmetry S, S′ with respect to which the field source members 13 are symmetrically disposed. The field has a component which is displaceable in the x-direction. To provide such field, a pattern of source strengths according to the formula F1(x)=Fm(x)+Fc(x) is applied to the field source members, wherein Fm is a component which is substantially independent of the displacement x0 and Fc is a correction component which is dependent on x0.
Abstract translation:提供了一种操纵至少一个带电粒子束的装置和方法。 该装置包括两排场源元件13,它们周期性地彼此间隔设置,使得存在对称S,S'的平面,场源元件13对称地设置对准面。 该场具有可在x方向上移位的分量。 为了提供这样的场,根据公式F 1(x)= F m(x)+ F c(x) x)被施加到场源成员,其中F m是基本上独立于位移x 0和F C 1的分量 取决于x <0>的校正分量。
Abstract:
An electron beam apparatus prevents a rapid increase of dosage caused by stoppage or deceleration of movement and protects the specimen when the specimen is irradiated with the electron beam while the specimen and the electron beam are being relatively moved. An electron beam source outputs the electron beam. The dosage of election beam irradiated per unit area of the specimen is measured. A storage section stores a predetermined dosage per unit area in memory for the specimen. A detector detects over exposure of the electron beam when the measured dosage per unit area is greater than the dosage per unit area stored in the storage section. A controller controls the electron beam source to reduce the dosage per unit area of the electron beam lower than the dosage per unit area stored in the storage section.
Abstract:
An electron beam exposure apparatus for exposing a wafer by an electron beam, including: an electron beam generating section for generating the electron beam; a deflector for deflecting the electron beam; a deflection control section for outputting a deflection control signal for causing the deflector to deflect the electron beam; and a control signal storage section for storing a value of the deflection control signal output from the deflection control section. The control signal storage section and the deflector may be monolithically integrated on a semiconductor substrate.
Abstract:
An electron beam apparatus prevents a rapid increase of dosage caused by stoppage or deceleration of movement and protects the specimen when the specimen is irradiated with the electron beam while the specimen and the electron beam are being relatively moved. An electron beam source outputs the electron beam. The dosage of electron beam irradiated per unit area of the specimen is measured. A storage section stores a predetermined dosage per unit area in memory for the specimen. A detector detects over exposure of the electron beam when the measured dosage per unit area is greater than the dosage per unit area stored in the storage section. A controller controls the electron beam source to reduce the dosage per unit area of the electron beam lower than the dosage per unit area stored in the storage section.
Abstract:
To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and deflector, a glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.
Abstract:
Scanning beam apparatus adapted to display two views of a surface for stereoscopic viewing, wherein two series of electrical signals are obtained by scanning the surface with a normal and then tilted beam characterized by a frame store (36) to which the two series of electrical signals are supplied, the frame store including a feedback loop and input and feedback multiplying means (38, 40) and forming a recursive filter, and signal converter means for (42) including a red/green/blue look-up table memory means for generating red/green/blue signals for display by a color monitor (44). Alternate tilting of the beam is achieved by adjusting during alternate scans the currents flowing in the gun alignment coils (12) of the SEM so as to shift the beam, and simultaneously introducing an offset in the signals applied to at least one other element (14 or 16) in the beam forming and focusing assembly, to counteract the shift introduced by the alignment adjustment, whereby the point of intersection of the beam axes follows the focal plane as focus is altered. The two video signals may be correlated to produce a correlation signal whose value for each point in the surface indicates the apparent shift in position of that point as between the normal and tilted beam scans, to produce a signal indicative for the surface topography. The correlating signal may be converted to a focusing control signal and may be enhanced by process for successive approximations.
Abstract:
A blanking aperture array unit according to the present embodiment includes a chip configured to control a charged particle beam by blanking control of switching whether to irradiate a target with the charged particle beam; a substrate having the chip mounted thereon; a wire configured to electrically connect pads on the chip to the substrate and transmit a control signal for the blanking control from the substrate to the chip through the pads; and a conductive covering member having a first end connected to the substrate and a second end located on the chip, the covering member being provided from the first end to the second end to cover the wire while maintaining electrical insulation from the wire, and at least two end sides of the second end of the covering member are nearer a central portion of the chip than locations of the pads on the chip.
Abstract:
The present invention enlarges a range of movement of field of view by beam deflection with a simple deflector configuration and suppresses deterioration of a signal electron detection rate caused by the beam deflection. A scanning electron microscope according to the present invention is provided with a first deflection field setting module that sets plural deflectors to move a scanning area on a specimen by a primary electron beam to a position deviated from an axis extended from an electron source toward the center of an objective lens and a second deflection field setting module that sets the plural deflectors so that trajectories of signal electrons are corrected without changing the scanning area set by the first deflection field setting module. The control unit controls the plural deflectors by adding a setting value set by the second deflection field setting module to a setting value set by the first deflection field setting module.
Abstract:
A charged particle beam writing apparatus includes a number of shots calculation circuit to calculate the number of shots in the case where a deflection region is irradiated with a shot of a charged particle beam, a deflection position correcting circuit to correct a deflection position of the charged particle beam to be shot in the deflection region, depending on the number of shots to be shot in the deflection region, and a deflector to deflect the charged particle beam to a corrected deflected position on the target object.
Abstract:
The system described herein relates to a particle beam apparatus for analyzing and/or for processing an object and to a method for operating a particle beam apparatus. The particle beam apparatus is designed for example as an electron beam apparatus and/or an ion beam apparatus. The particle beam apparatus comprises a beam deflection device, for example an objective lens, which is provided with a first coil and a second coil. The first coil is operated with a first coil current. The second coil is operated with a second coil current. The first coil current and/or the second coil current may always be controlled in such a way that the sum of the first coil current and the second coil current (the summation current) or the difference between the first coil current and the second coil current (the difference current) is controlled to a setpoint value.