公开(公告)号：US20030146397A1

公开(公告)日：2003-08-07

申请号：US10364424

申请日：2003-02-12

Applicant: Hitachi, Ltd.

Inventor： Haruo Yoda ,  Hajime Kawano

IPC: H01J037/302

CPC classification number: H01J37/3026

Abstract: A charged particle beam drawing apparatus and a pattern forming method capable of drawing fine patterns while minimizing the proximity effect, thus overcoming the drawbacks of the conventional exposure area density correcting method and supplementary exposure method. The inventive method comprises the steps of performing supplementary exposure by irradiating a drawing area on a specimen with a charged particle beam, and performing main exposure by irradiating with the charged particle beam a region made up of the drawing pattern inside the drawing area on the specimen. The supplementary exposure step includes the steps of: dividing the drawing area into a plurality of smaller regions of an equal area each while calculating an area value of the drawing pattern in each smaller region; correcting the area value of each smaller region by use of a weighted sum of the area values calculated for proximate smaller regions surrounding the smaller region in question; generating supplementary exposure geometries for the drawing area; and computing doses of exposure for the generated supplementary exposure geometries by referring to the corrected area values.

Abstract translation: 一种带电粒子束描绘装置和图案形成方法，其能够在最小化邻近效应的同时绘制精细图案，从而克服了常规曝光区域密度校正方法和补充曝光方法的缺点。 本发明的方法包括以下步骤：通过用带电粒子束照射样本上的绘图区域来进行辅助曝光，并且通过用带电粒子束照射由样本上的绘图区域内的绘图图案组成的区域来进行主曝光 。 辅助曝光步骤包括以下步骤：在每个较小区域中计算绘制图案的面积值的同时将绘图区域划分成多个相等面积的较小区域; 通过使用针对所讨论的较小区域周围的较小区域计算的面积值的加权和来校正每个较小区域的面积值; 为绘图区域生成补充曝光几何; 以及通过参考校正的面积值计算所产生的辅助曝光几何的曝光的剂量。

公开(公告)号：US20020179857A1

公开(公告)日：2002-12-05

申请号：US10152343

申请日：2002-05-22

Inventor： Akira Higuchi

IPC: H01J037/302

CPC classification number: H01J37/304 ,  H01J2237/3045 ,  H01J2237/3175

Abstract: A calibration mask having a plurality of marks previously formed thereon is loaded, and a deflector is used to control deflection of electron beams so that the electron beams are incident on a mark of the calibration mask. The electron beams, having passed through the mark, impinge on a first Faraday cup having a first mark and on a second Faraday cup having a second mark. Then, positional coordinates on an XY stage are detected when electrical quantities detected by the Faraday cups are largest. The positional coordinates on the above mentioned XY stage are detected for each of the marks of the calibration mask. Then, according to the positional coordinates on the XY stage detected in this manner and a difference in height between the marks, the inclination of the electron beams is calculated for the position input to each mark of the calibration mask. Thus, the inclination of electron beams can be accurately measured.

Abstract translation: 加载具有预先形成在其上的多个标记的校准掩模，并且使用偏转器来控制电子束的偏转，使得电子束入射到校准掩模的标记上。 已经通过标记的电子束撞击具有第一标记的第一法拉第杯，并且在具有第二标记的第二法拉第杯上。 然后，当法拉第杯检测到的电量最大时，检测XY台上的位置坐标。 针对校准掩模的每个标记检测上述XY台上的位置坐标。 然后，根据以这种方式检测的XY台上的位置坐标和标记之间的高度差，计算对于校准掩模的每个标记输入的位置的电子束的倾斜度。 因此，可以精确地测量电子束的倾斜度。

公开(公告)号：US20030183782A1

公开(公告)日：2003-10-02

申请号：US10114399

申请日：2002-04-01

Inventor： Lee H. Veneklasen ,  Mary B. Veneklasen ,  Stephen Rishton ,  Stacey J. Winter ,  Volker Boegli ,  Huei Mei Kao

IPC: H01J037/302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/31776

Abstract: Provided is a technique for generating patterns with a raster scanned beam in a photolithographic system that employs a multiple blank position flash cycle. In accordance with one embodiment of the present invention, a beam creates a shadow of a first aperture that impinges upon a region of a stop, referred to as a first blank position. The beam is deflected so that the shadow of the first aperture moves along a first direction to a flash position, in which a portion thereof superimposes a second aperture located in the stop. To complete the flash cycle, the beam is deflected so that shadow of the first aperture impinges upon a second region of the stop, referred to as second blank position. As a result, during the flash cycle, the beam is deflected in one direction to impinge upon two different blank positions.

Abstract translation: 提供了一种用于在采用多个空白位置闪光周期的光刻系统中用光栅扫描光束产生图案的技术。 根据本发明的一个实施例，光束产生撞击在被称为第一空白位置的停止区域上的第一孔的阴影。 光束被偏转，使得第一光圈的阴影沿着第一方向移动到闪光位置，在该闪光位置，其一部分叠加位于光阑中的第二孔。 为了完成闪光循环，光束被偏转，使得第一光圈的阴影撞击在停止的第二区域，称为第二空白位置。 结果，在闪光周期期间，光束在一个方向上偏转以撞击两个不同的空白位置。

公开(公告)号：US20030107009A1

公开(公告)日：2003-06-12

申请号：US10338620

申请日：2003-01-08

Applicant: ADVANTEST CORPORATION

Inventor： Hitoshi Tanaka

IPC: H01J037/302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  G03F1/20 ,  H01J37/3177 ,  H01J2237/0435

Abstract: An electron beam exposure apparatus characterized by comprising an electron gun producing an electron beam, a first shaping member for shaping the cross-sectional shape of the electron beam, a second shaping member serving as a splitting member having a splitting part including splitting openings for splitting the electron beam into electron beams of different shapes, and a blocking member for blocking at least one of the electron beams.

Abstract translation: 一种电子束曝光装置，其特征在于包括产生电子束的电子枪，用于使电子束的横截面形状成形的第一成形构件，用作分离构件的第二成形构件，具有分离部分，该分离部分包括用于分裂的分离开口 电子束变成不同形状的电子束，以及用于阻挡至少一个电子束的阻挡构件。

公开(公告)号：US20030010937A1

公开(公告)日：2003-01-16

申请号：US09905561

申请日：2001-07-13

Applicant: Applied Materials, Inc.

Inventor： Matthew J. Jolley ,  Asher Klatchko ,  Robert Marc Sills

IPC: H01J037/302

CPC classification number: G03F7/70383 ,  H01J37/3026 ,  H01J2237/3175

Abstract: A pattern generation method and system in which hierarchical image data (determining a pattern to be imaged on a target) is received at a graphics engine having a memory, at least one cell determining a repeated feature or set of features of the pattern is stored in the memory, and beam control data is generated in response to the image data. The image data includes residual data including at least two subroutine call commands for each cell stored in the memory. In response to each subroutine call command, the graphics engine retrieves a cell (identified by the command) from the memory, and asserts beam control data that determines a feature or feature set determined by the cell to be imaged at (or beginning at) a location on the target identified by the command. The subroutine call commands can be distributed throughout the image data, including in at least one cell to be cached as well as in the residual data. Preferably, the graphics engine caches each cell of the image data in the memory and generates a set of beam control data in response to each subroutine call command including by retrieving a cached cell from the memory and generating the beam control data in response to the retrieved cell. Alternatively, the graphics engine generates a cell of beam control data in response to each cell of image data, caches each such beam control data cell in the memory, and responds to each subroutine call command of the image data by retrieving a cached beam control data cell from the memory and asserting the retrieved beam control data cell as part of a set of beam control data that determines a feature or feature set (determined by the retrieved cell) to be imaged on the target. Another aspect of the invention is a method and apparatus for determining cells of hierarchical image data (to be transferred to a graphics engine) by analyzing hierarchical raw image data and transforming the raw image data into optimized hierarchical image data including the cells.

公开(公告)号：US20040135101A1

公开(公告)日：2004-07-15

申请号：US10639165

申请日：2003-08-11

Applicant: Konica Corpoaration

Inventor： Osamu Masuda ,  Kazumi Furuta

IPC: H01J037/302

CPC classification number: H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  G02B5/1857 ,  G02B5/1876 ,  G11B7/13922 ,  H01J37/3174 ,  H01J2237/30461 ,  H01J2237/31764 ,  H01J2237/31766

Abstract: A pattern drawing method of drawing a desired pattern on a base material by irradiating an electronic beam and scanning the base material with the electronic beam with a predetermined dose amount, comprising: a first step of drawing a first region on the base material by scanning with the electronic beam with a first dose amount; a second step of drawing a second region on the base material by scanning with the electronic beam with a second dose amount; and a inclining step of inclining a boundary between the first region and the second region to form an inclined surface by conducting a first scanning to scan with the electronic beam with the first dose amount and a second scanning to scan with the electronic beam with the second does amount in a mixed arrangement.

Abstract translation: 一种通过用电子束照射电子束并用电子束以预定剂量扫描基底材料来在基材上绘制所需图案的图案描绘方法，包括：第一步骤，通过扫描基底材料上的第一区域， 具有第一剂量的电子束; 第二步骤，通过用第二剂量的电子束扫描来在基材上绘制第二区域; 以及倾斜步骤，通过用电子束以第一剂量进行第一次扫描扫描以及第二次扫描，使第二区域和第二区域之间的边界倾斜以形成倾斜表面，并用第二扫描电子束扫描第二扫描 确实是混合排列的。

公开(公告)号：US20030160192A1

公开(公告)日：2003-08-28

申请号：US10255830

申请日：2002-09-27

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Ryoichi Inanami ,  Shunko Magoshi ,  Atsushi Ando

IPC: H01J037/302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3026 ,  H01J37/3174 ,  H01J2237/31764 ,  H01J2237/31788

Abstract: Provided is a charged particle beam exposure method placing an mask having openings in an exposure apparatus that including a deflector which deflects a charged particle beam on the mask, applying a first voltage to the deflector, the first voltage deflects the beam at an first opening, sequentially exposing all the character patterns which can be exposed by the beam shaped by the first opening after a stabilization time set as a function of a voltage has elapsed after applying the first voltage, applying a second voltage to the deflector after all the character patterns have been exposed by the beam shaped by the first opening, the second voltage deflects the beam at a next opening, and exposing all the character patterns which can be exposed by the beam shaped by the next opening after the stabilization time has elapsed after applying the second voltage.

Abstract translation: 本发明提供了一种带电粒子束曝光方法，该曝光方法将具有开口的掩模放置在曝光装置中，所述曝光装置包括使带电粒子束偏转在掩模上的偏转器，向偏转器施加第一电压，第一电压在第一开口处偏转光束， 在施加第一电压之后已经经过设定为电压的函数的稳定时间之后，通过由第一开口形成的光束可暴露的所有字符图案，在所有字符图案具有所有字符图案之后，向偏转器施加第二电压 由第一开口形成的光束曝光，第二电压在下一个开口处偏转光束，并且在应用第二个曝光后的稳定时间过去之后，暴露由下一个开口所形成的光束可能暴露的所有字符图案 电压。

公开(公告)号：US20030127607A1

公开(公告)日：2003-07-10

申请号：US10315228

申请日：2002-12-10

Inventor： Paul Van Der Veen

IPC: G03F007/20 ,  H01J037/302

CPC classification number: G03F7/70916 ,  G03F7/70558 ,  G03F7/70941 ,  G03F7/70983

Abstract: The transmission or reflection loss due to surface contamination of a mask is predicted as a function of position on the mask and time. At the time of an exposure compensation for the transmission or reflection loss is effected using a device capable of adjusting the beam intensity across the length of an exposure field.

Abstract translation: 由于掩模的表面污染引起的透射或反射损失被预测为掩模上的位置和时间的函数。 在曝光补偿时，使用能够调整曝光场长度上的光束强度的装置实现透射或反射损失。

公开(公告)号：US20020179855A1

公开(公告)日：2002-12-05

申请号：US10152687

申请日：2002-05-23

Applicant: Canon Kabushiki Kaisha

Inventor： Masato Muraki

IPC: H01J037/302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/302 ,  H01J37/3177 ,  H01J2237/30461

Abstract: A multi-charged-particle beam drawing apparatus and method that can correct a change in positional relationship, caused by the Coulomb effect, among charged particle beams are provided. The focal lengths of two electron lenses (21, 22) that form a condenser lens (2) are adjusted individually to change a relative positional relationship between the front focal position of the condenser lens (2) and an electron source (ES). Electron beams becoming incident on an aperture array (AA) can diverge, or be focused or collimated. Therefore, positions where intermediate images (img1-img3) are to be formed can be changed, and the change in positional relationship, caused by the Coulomb effect, among the charged particle beams can be corrected.

Abstract translation: 提供了一种能够校正由库仑效应引起的带电粒子束之间的位置关系变化的多带电粒子束描绘装置和方法。 分别调整形成聚光透镜（2）的两个电子透镜（21,22）的焦距，以改变聚光透镜（2）的前焦点与电子源（ES）之间的相对位置关系。 入射到孔径阵列（AA）上的电子束可能发散或聚焦或准直。 因此，可以改变要形成中间图像（img1-img3）的位置，并且可以校正带电粒子束之间由库仑效应引起的位置关系的变化。

公开(公告)号：US20020121615A1

公开(公告)日：2002-09-05

申请号：US09996527

申请日：2001-11-28

Applicant: Nikon Corporation

Inventor： Mamoru Nakasuji

IPC: H01J037/302

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/3174 ,  H01J2237/0264

Abstract: CPB microlithography systems are disclosed that effectively cancel the effects of floating external magnetic fields and that exhibit a high magnetic shielding ratio using small components. An exemplary system includes a search coil situated and configured to detect external magnetic field, and a compensation coil situated and configured to produce a magnetic field that, based on the detected magnetic field, cancels the external magnetic field. These coils desirably are situated downstream of an illumination lens. The external magnetic field detected by the search coil is converted to a corresponding electrical signal by an external-magnetic-field-detection circuit and routed to an external-magnetic-field-compensation circuit to which the compensation coil is connected. The external-magnetic-field-compensation circuit cancels the external magnetic field by providing an electrical current, corresponding to the detected external magnetic field, to the compensation coil. A search coil and compensation coil also can be provided in a similar manner downstream of a second projection lens, and provided with a respective external-magnetic-field-detection circuit and external-magnetic-field-compensation circuit.

Abstract translation: 公开了CPB微光刻系统，其有效地消除了浮动的外部磁场的影响，并且使用小的部件表现出高的磁屏蔽比。 示例性系统包括位于并被配置为检测外部磁场的搜索线圈，以及位于并被配置为产生基于所检测的磁场抵消外部磁场的磁场的补偿线圈。 这些线圈期望地位于照明透镜的下游。 由搜索线圈检测的外部磁场由外部磁场检测电路转换成相应的电信号，并被路由到与补偿线圈连接的外部磁场补偿电路。 外部磁场补偿电路通过向补偿线圈提供与检测到的外部磁场相对应的电流来抵消外部磁场。 搜索线圈和补偿线圈也可以以类似的方式在第二投影透镜的下游提供，并且设置有相应的外部磁场检测电路和外部磁场补偿电路。