公开(公告)号：US20180082789A1

公开(公告)日：2018-03-22

申请号：US15708476

申请日：2017-09-19

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Hiroshi ASANO ,  Nobuyasu HAMAMORI ,  Koji MATSUSHITA

IPC: H01G4/30 ,  H01G4/12 ,  H01G4/005 ,  H01G4/14 ,  H01G4/232

CPC classification number: H01G4/30 ,  H01G2/10 ,  H01G2/14 ,  H01G4/005 ,  H01G4/12 ,  H01G4/14 ,  H01G4/232

Abstract: A multilayer ceramic electronic component includes a first organic layer located on both principal surfaces and both side surfaces in contact with a first external electrode, and a second organic layer located on the both principal surfaces and the both side surfaces in contact with a second external electrode. The first organic layer includes an organic silicon compound and covers an end of a first base electrode layer of the first external electrode, and the second organic layer includes an organic silicon compound and covers an end of a second base electrode layer of the second external electrode. A first plating layer of the first external electrode includes an end in contact with the surface of the first organic layer, and a second plating layer of the second external electrode includes an end in contact with the surface of the second organic layer.

公开(公告)号：US20180082783A1

公开(公告)日：2018-03-22

申请号：US15801240

申请日：2017-11-01

Applicant: Capacitor Sciences Incorporated

Inventor： Pavel Ivan Lazarev

IPC: H01G4/14 ,  H01G4/30

CPC classification number: H01G4/14 ,  H01G4/30 ,  H01G4/33

Abstract: The present invention relates generally to the fields of electrical engineering and electronics. More specifically, the present invention relates to passive components of electrical circuitry and more particularly to energy storage devices and method of production thereof.

公开(公告)号：US09911852B2

公开(公告)日：2018-03-06

申请号：US15171288

申请日：2016-06-02

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John B. Campi, Jr. ,  Robert J. Gauthier, Jr. ,  Rahul Mishra ,  Souvick Mitra ,  Mujahid Muhammad

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/423 ,  H01L29/06 ,  H01L29/10 ,  H01L29/08

CPC classification number: H01L29/7856 ,  B29C37/0025 ,  B29C47/065 ,  B29C47/56 ,  B29K2023/12 ,  B29K2105/16 ,  B29K2507/04 ,  B29K2995/0005 ,  B29K2995/0007 ,  B29L2009/003 ,  B29L2009/005 ,  B29L2031/34 ,  B32B3/08 ,  B32B7/02 ,  B32B27/00 ,  B32B27/08 ,  B32B27/28 ,  B32B27/306 ,  B32B27/308 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B2262/106 ,  B32B2264/105 ,  B32B2264/12 ,  B32B2270/00 ,  B32B2274/00 ,  B32B2307/202 ,  B32B2307/204 ,  B32B2307/206 ,  B32B2307/518 ,  B32B2307/732 ,  B32B2457/16 ,  H01G4/005 ,  H01G4/14 ,  H01G4/228 ,  H01G4/30 ,  H01G4/33 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823493 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0869 ,  H01L29/0882 ,  H01L29/0886 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/42392 ,  H01L29/66681 ,  H01L29/66704 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66795 ,  H01L29/7802 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/7851 ,  H01L2029/7858

Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

公开(公告)号：US20170162569A1

公开(公告)日：2017-06-08

申请号：US15441353

申请日：2017-02-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： John B. CAMPI, JR. ,  Robert J. GAUTHIER, JR. ,  Rahul MISHRA ,  Souvick MITRA ,  Mujahid MUHAMMAD

IPC: H01L27/088 ,  H01L21/265 ,  H01L21/266 ,  H01L29/423 ,  H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/10

CPC classification number: H01L29/7856 ,  B29C37/0025 ,  B29C47/065 ,  B29C47/56 ,  B29K2023/12 ,  B29K2105/16 ,  B29K2507/04 ,  B29K2995/0005 ,  B29K2995/0007 ,  B29L2009/003 ,  B29L2009/005 ,  B29L2031/34 ,  B32B3/08 ,  B32B7/02 ,  B32B27/00 ,  B32B27/08 ,  B32B27/28 ,  B32B27/306 ,  B32B27/308 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B2262/106 ,  B32B2264/105 ,  B32B2264/12 ,  B32B2270/00 ,  B32B2274/00 ,  B32B2307/202 ,  B32B2307/204 ,  B32B2307/206 ,  B32B2307/518 ,  B32B2307/732 ,  B32B2457/16 ,  H01G4/005 ,  H01G4/14 ,  H01G4/228 ,  H01G4/30 ,  H01G4/33 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/823412 ,  H01L21/823431 ,  H01L21/823475 ,  H01L21/823481 ,  H01L21/823493 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0865 ,  H01L29/0869 ,  H01L29/0882 ,  H01L29/0886 ,  H01L29/1045 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/42392 ,  H01L29/66681 ,  H01L29/66704 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66795 ,  H01L29/7802 ,  H01L29/7809 ,  H01L29/7811 ,  H01L29/7816 ,  H01L29/7825 ,  H01L29/7851 ,  H01L2029/7858

Abstract: A gate-all around fin double diffused metal oxide semiconductor (DMOS) devices and methods of manufacture are disclosed. The method includes forming a plurality of fin structures from a substrate. The method further includes forming a well of a first conductivity type and a second conductivity type within the substrate and corresponding fin structures of the plurality of fin structures. The method further includes forming a source contact on an exposed portion of a first fin structure. The method further comprises forming drain contacts on exposed portions of adjacent fin structures to the first fin structure. The method further includes forming a gate structure in a dielectric fill material about the first fin structure and extending over the well of the first conductivity type.

公开(公告)号：US09642258B2

公开(公告)日：2017-05-02

申请号：US13865841

申请日：2013-04-18

Applicant: Brewer Science Inc.

Inventor： Liyong Diao ,  Wu-Sheng Shih ,  James E. Lamb, III ,  Christopher Landorf

IPC: H01F27/28 ,  H01F5/00 ,  H05K1/16 ,  H01G4/008 ,  H01G4/14 ,  H01G4/40 ,  H05K1/09 ,  H05K1/03

CPC classification number: H05K1/162 ,  H01F5/003 ,  H01F27/2804 ,  H01G4/008 ,  H01G4/14 ,  H01G4/40 ,  H05K1/0313 ,  H05K1/097 ,  H05K1/165 ,  H05K2201/026 ,  H05K2201/0323 ,  H05K2201/10128 ,  H05K2201/10151 ,  H05K2201/10159 ,  H05K2201/10166 ,  H05K2201/10174

Abstract: The present invention provides novel tank circuits that are totally passive, and they are made of conductive-grade carbon nanotubes (CNTs) on substrates, and preferably flexible substrates. These components and structures contain no traditional electronic materials such as silicon, metal oxides, or ceramics, and they are totally organic. They may be used in applications where the resonant frequency and amplitude of the sensor can be modulated by a thermal, mechanical, or chemical signal, such as temperature, strain, pressure, vibration, or humidity. All-organic, and consequently combustible, passive RF sensors have unique applications for defense and consumer industries.

公开(公告)号：US20170058061A1

公开(公告)日：2017-03-02

申请号：US15239424

申请日：2016-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Kyung LEE ,  Jiyoung JUNG ,  Jeong II PARK ,  Ajeong CHOI

IPC: C08F130/08 ,  H01L51/05 ,  H01G4/14 ,  H01L51/00

CPC classification number: C08F130/08 ,  C08G77/14 ,  C08G77/20 ,  C08G77/442 ,  C08G83/001 ,  C09D183/10 ,  H01B3/46 ,  H01G4/14 ,  H01L51/004 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/0537

Abstract: A composition includes a product of a condensation reaction between a thermal cross-linking agent and a product of hydrolysis and condensation polymerization of a compound represented by Chemical Formula 1: In Chemical Formula 1, the definitions of the substituents are the same as in the detailed description. Further, an electronic device and a thin film transistor include a cured material of the composition.

Abstract translation: 在化学式1中，取代基的定义与详细描述相同。 此外，电子器件和薄膜晶体管包括组合物的固化材料。

公开(公告)号：US09558887B2

公开(公告)日：2017-01-31

申请号：US14408899

申请日：2013-06-21

Applicant: Monash University

Inventor： Mainak Majumder ,  Jing Fu ,  Derrek E Lobo

IPC: H01L21/768 ,  H01G4/14 ,  B32B9/04 ,  H01L21/02 ,  H01L23/532 ,  H01G11/36 ,  H01G11/86 ,  B32B9/00 ,  C01B31/04 ,  H01B1/24 ,  H01B3/00 ,  B82Y30/00 ,  B82Y40/00

CPC classification number: H01G4/14 ,  B32B9/007 ,  B32B9/04 ,  B32B2307/206 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/194 ,  H01B1/24 ,  H01B3/004 ,  H01G11/36 ,  H01G11/86 ,  H01L21/02115 ,  H01L21/76823 ,  H01L21/76838 ,  H01L23/53276 ,  H01L2924/0002 ,  Y02E60/13 ,  Y10T29/417 ,  Y10T29/49117 ,  H01L2924/00

Abstract: A method of forming a conductive portion in an insulating material. The insulating material includes carbon and at least one other constituent. The method includes exposing the insulating material to ions to preferentially remove the other constituent.

Abstract translation: 一种在绝缘材料中形成导电部分的方法。 绝缘材料包括碳和至少一种其它成分。 该方法包括将绝缘材料暴露于离子以优先除去其它成分。

公开(公告)号：US20160284472A1

公开(公告)日：2016-09-29

申请号：US14668787

申请日：2015-03-25

Applicant: SIGMA LABORATORIES OF ARIZONA, LLC

Inventor： ANGELO YIALIZIS

IPC: H01G4/12 ,  H01G4/30

CPC classification number: H01G4/14 ,  C08F122/14 ,  H01G4/005 ,  H01G4/129 ,  H01G4/232 ,  H01G4/30 ,  H01G4/304

Abstract: Prismatic polymer monolithic capacitor structure operating at temperatures exceeding 140° C. and including multiple interleaving radiation-cured polymer dielectric layers and metal layers. Method for fabrication of same. The geometry of structure is judiciously chosen to increase sheet resistance of metal electrodes while reducing the capacitor's equivalent series resistance. Metal electrode layers are provided with a thickened peripheral portion to increase strength of terminating connections and are passivated to increase corrosion resistance. Materials for polymer dielectric layers are devised to ensure that the capacitor's dissipation factor remains substantially unchanged across the whole range of operating temperatures, to procure glass transition temperature that is no less than the desired operating temperature, and to optimize the absorption of ambient moisture by the polymeric layers.

Abstract translation: 棱柱形聚合物单片电容器结构在超过140℃的温度下工作，并且包括多个交错辐射固化的聚合物电介质层和金属层。 制造方法 明智地选择结构的几何结构以增加金属电极的薄层电阻，同时降低电容器的等效串联电阻。 金属电极层设置有增厚的周边部分，以增加端接连接的强度，并被钝化以提高耐腐蚀性。 设计了用于聚合物介电层的材料，以确保电容器的损耗因数在整个工作温度范围内保持基本不变，以获得不低于所需操作温度的玻璃化转变温度，并且优化环境湿度的吸收 聚合物层。

公开(公告)号：US09406442B2

公开(公告)日：2016-08-02

申请号：US13804301

申请日：2013-03-14

Applicant: California Institute of Technology

Inventor： Harish Manohara ,  Linda Y. Del Castillo ,  Mohammed M. Mojarradi

IPC: H01G4/14 ,  H01G4/01 ,  H01G4/012 ,  H01G4/30 ,  H01G4/33 ,  H01G4/232 ,  B82Y10/00 ,  H01L49/02 ,  H01G4/38

CPC classification number: H01G4/30 ,  B82Y10/00 ,  H01G4/01 ,  H01G4/1209 ,  H01G4/14 ,  H01G4/232 ,  H01G4/242 ,  H01G4/33 ,  H01G4/38 ,  H01L28/60 ,  H01L28/86 ,  H01L28/90

Abstract: Systems and methods in accordance with embodiments of the invention implement micro- and nanoscale capacitors that incorporate a conductive element that conforms to the shape of an array elongated bodies. In one embodiment, a capacitor that incorporates a conductive element that conforms to the shape of an array of elongated bodies includes: a first conductive element that conforms to the shape of an array of elongated bodies; a second conductive element that conforms to the shape of an array of elongated bodies; and a dielectric material disposed in between the first conductive element and the second conductive element, and thereby physically separates them.

Abstract translation: 根据本发明的实施例的系统和方法实现了结合符合阵列细长体的形状的导电元件的微型和纳米级电容器。 在一个实施例中，结合符合细长主体阵列的形状的导电元件的电容器包括：符合细长体阵列的形状的第一导电元件; 第二导电元件，其符合细长体阵列的形状; 以及布置在所述第一导电元件和所述第二导电元件之间的电介质材料，从而将它们物理分离。

公开(公告)号：US09269493B2

公开(公告)日：2016-02-23

申请号：US14324641

申请日：2014-07-07

Applicant: DuPont Teijin Films U.S. Limited Partnership

Inventor： Alexis Grosrenaud ,  Lucien Schosseler

IPC: C08J5/18 ,  H01G4/14 ,  C08L67/02 ,  C08L69/00 ,  H01G4/18 ,  H01B3/42

CPC classification number: H01G4/14 ,  C08J5/18 ,  C08J2367/02 ,  C08J2367/03 ,  C08J2369/00 ,  C08L67/02 ,  C08L69/00 ,  H01B3/423 ,  H01B3/426 ,  H01G4/18 ,  Y02T10/7022 ,  Y10T29/435 ,  C08L2666/18

Abstract: A stretched film includes a dispersion of at least one polyester and/or polycarbonate in a matrix of at least one polyester and/or polycarbonate different from the first polyester and/or polycarbonate, the percentage by weight of the dispersed polyester and/or polycarbonate in the dispersion being less than 50% and the dispersed polyester and/or polycarbonate being in the form of platelets. The stretched film can be used as a dielectric in a capacitor.

Abstract translation: 拉伸膜包括至少一种聚酯和/或聚碳酸酯在至少一种不同于第一聚酯和/或聚碳酸酯的聚酯和/或聚碳酸酯的基体中的分散体，分散的聚酯和/或聚碳酸酯的重量百分数 分散体小于50％，分散的聚酯和/或聚碳酸酯是血小板形式。 拉伸膜可以用作电容器中的电介质。