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    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
    11.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF 有权

    公开(公告)号：US20230068279A1

    公开(公告)日：2023-03-02

    申请号：US17461536

    申请日：2021-08-30

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Shih-Yao Lin ,  Hsiao Wen Lee ,  Ming-Ching Chang

    IPC分类号： H01L29/423 ,  H01L29/786 ,  H01L29/06 ,  H01L29/66 ,  H01L21/8234

    摘要： A semiconductor device includes an active gate structure extending along a first lateral direction. The semiconductor device includes an inactive gate structure also extending along the first lateral direction. The semiconductor device includes a first epitaxial structure disposed between the active gate structure and the inactive gate structure along a second lateral direction perpendicular to the first lateral direction. The active gate structure wraps around each of a plurality of channel layers that extend along the second direction, and the inactive gate structure straddles a semiconductor cladding layer that continuously extends along a first sidewall of the first epitaxial structure and across the plurality of channel layers.

    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
    12.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF 有权

    公开(公告)号：US20230065476A1

    公开(公告)日：2023-03-02

    申请号：US17461039

    申请日：2021-08-30

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Shih-Yao Lin ,  Hsiao Wen Lee ,  Chih-Han Lin

    IPC分类号： H01L29/423 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/786

    摘要： A method for making a semiconductor device includes forming a fin structure that extends along a first direction and comprises a plurality of sacrificial layers and a plurality of channel layers alternately stacked on top of one another. The method includes forming a dummy gate structure, over the fin structure, that extends along a second direction perpendicular to the first direction. The method includes forming a gate spacer extending along respective upper sidewall portions of the dummy gate structure, thereby defining a first distance between a bottom surface of the gate spacer and a top surface of a topmost one of the plurality of channel layers. The first distance is either zero or similar to a second distance that separates neighboring ones of the plurality of channel layers.

    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
    13.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF 有权

    公开(公告)号：US20230063087A1

    公开(公告)日：2023-03-02

    申请号：US17460075

    申请日：2021-08-27

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Shih-Yao Lin ,  Chen-Ping Chen ,  Chieh-Ning Feng ,  Hsiao Wen Lee ,  Chih-Han Lin

    IPC分类号： H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/8238 ,  H01L29/66

    摘要： A method includes forming a first, second, third, fourth, fifth, and sixth fin structure. The second fin structure is separated from each of the first and third fin structures by a first distance, the fifth fin structure is separated from each of the fourth and sixth fin structures by the first distance, and the third fin structure is separated from the fourth fin structure by a second distance greater than the first distance. The method includes forming a first dummy gate structure overlaying the first through third fin structures, and a second dummy gate structure overlaying the fourth through sixth fin structures; forming a number of source/drain structures that are coupled to the first, second, third, fourth, fifth, and sixth fin structures, respectively; and replacing the third fin structure with a first dielectric structure, and replacing the fourth fin structure with a second dielectric structure.

    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF
    15.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF 有权

    公开(公告)号：US20220302276A1

    公开(公告)日：2022-09-22

    申请号：US17834614

    申请日：2022-06-07

    申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

    发明人： Shih-Yao Lin ,  Chih-Han Lin ,  Hsiao Wen Lee

    IPC分类号： H01L29/423 ,  H01L29/06 ,  H01L29/66 ,  H01L29/786 ,  H01L29/78

    摘要： A semiconductor device includes a plurality of semiconductor layers vertically separated from one another. Each of the plurality of semiconductor layers extends along a first lateral direction. The semiconductor device includes a gate structure that extends along a second lateral direction and comprises at least a lower portion that wraps around each of the plurality of semiconductor layers. The lower portion of the gate structure comprises a plurality of first gate sections that are laterally aligned with the plurality of semiconductor layers, respectively, and wherein each of the plurality of first gate sections has ends that each extend along the second lateral direction and present a first curvature-based profile.