- 专利标题： Semiconductor devices and methods of manufacturing thereof
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申请号： US17873978申请日： 2022-07-26
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公开(公告)号： US11923440B2公开(公告)日： 2024-03-05
- 发明人: Shih-Yao Lin , Chen-Ping Chen , Kuei-Yu Kao , Hsiao Wen Lee , Chih-Han Lin
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsinchu
- 代理机构： FOLEY & LARDNER LLP
- 分案原申请号： US17081877 2020.10.27
- 主分类号： H01L29/94
- IPC分类号： H01L29/94 ; H01L21/8234 ; H01L27/088 ; H01L29/06 ; H01L29/66 ; H01L29/76 ; H01L29/78
摘要：
A method of fabricating a semiconductor device is disclosed. The method includes forming semiconductor fins on a substrate. A first dummy gate is formed over the semiconductor fins. A recess is formed in the first dummy gate, and the recess is disposed between the semiconductor fins. A dummy fin material is formed in the recess. A portion of the dummy fin material is removed to expose an upper surface of the first dummy gate and to form a dummy fin. A second dummy gate is formed on the exposed upper surface of the first dummy gate.
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