公开(公告)号：US09553089B2

公开(公告)日：2017-01-24

申请号：US14995457

申请日：2016-01-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Gun You ,  Hyung-Jong Lee ,  Sung-Min Kim ,  Chong-Kwang Chang

IPC: H01L27/088 ,  H01L23/528 ,  H01L29/06

CPC classification number: H01L27/0886 ,  H01L23/485 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/0649

Abstract: A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along a direction in which the gate electrode extends intersects the second fin pattern being a second height, the first height being smaller than the second height.

Abstract translation: 一种半导体器件，包括由第一沟槽分隔的第一和第二鳍状图案; 与第一和第二鳍状图案相交的栅电极; 以及在所述栅极电极的至少一侧上的触点，所述触点接触所述第一鳍状图案，所述触点具有不接触所述第二鳍状图案的底表面，从所述第一沟槽的底部到最顶端的高度 在第一鳍状物的第一鳍状物与第一鳍状物的第一高度相交的区域中的第一鳍状图案和从第一沟槽的底部到第二鳍状图案的最上端的高度， 沿着栅极延伸的方向延伸的接触部将第二翅片图案与第二高度相交，第一高度小于第二高度。

公开(公告)号：US11784255B2

公开(公告)日：2023-10-10

申请号：US17119507

申请日：2020-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Kwan Yu ,  Sung-Min Kim ,  Dong-Suk Shin ,  Seung-Hun Lee ,  Dong-Won Kim

IPC: H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L27/088 ,  H01L21/8234 ,  H01L29/423 ,  H10B10/00 ,  H01L21/8238 ,  H01L21/84 ,  H01L27/12 ,  H01L27/092

CPC classification number: H01L29/785 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0642 ,  H01L29/42372 ,  H01L29/66545 ,  H01L29/66795 ,  H10B10/12 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0924 ,  H01L27/1211

Abstract: A semiconductor device may include a first active fin, a second active fin and a gate structure. The first active fin may extend in a first direction on a substrate and may include a first straight line extension portion, a second straight line extension portion, and a bent portion between the first and second straight line extension portions. The second active fin may extend in the first direction on the substrate. The gate structure may extend in a second direction perpendicular to the first direction on the substrate. The gate structure may cross one of the first and second straight line extension portions of the first active fin and may cross the second active fin.

公开(公告)号：US10658244B2

公开(公告)日：2020-05-19

申请号：US16023621

申请日：2018-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Dong-won Kim ,  Geum-jong Bae

IPC: H01L21/8234 ,  H01L21/762 ,  H01L27/088 ,  H01L29/66 ,  H01L29/78

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate including a device region defined by a trench in the substrate. The semiconductor device includes a plurality of fin-shaped active regions spaced apart from each other in the device region and extending in a first direction. The semiconductor device includes a protruding pattern extending along a bottom surface of the trench. Moreover, an interval between the protruding pattern and the plurality of fin-shaped active regions is greater than an interval between two adjacent ones of the plurality of fin-shaped active regions.

公开(公告)号：US10319858B2

公开(公告)日：2019-06-11

申请号：US16128152

申请日：2018-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Kyung-Seok Oh ,  Cheol Kim ,  Heon-Jong Shin ,  Jong-Ryeol Yoo ,  Hyun-Jung Lee ,  Seong-Hoon Jeong

IPC: H01L21/84 ,  H01L27/12 ,  H01L29/66 ,  H01L29/78

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.

公开(公告)号：US10276570B2

公开(公告)日：2019-04-30

申请号：US15944956

申请日：2018-04-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Gun You ,  Hyung-Jong Lee ,  Sung-Min Kim ,  Chong-Kwang Chang

IPC: H01L27/088 ,  H01L29/06 ,  H01L23/485 ,  H01L23/532 ,  H01L23/528

Abstract: A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along a direction in which the gate electrode extends intersects the second fin pattern being a second height, the first height being smaller than the second height.

公开(公告)号：US20190088551A1

公开(公告)日：2019-03-21

申请号：US16023621

申请日：2018-06-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Dong-won Kim ,  Geum-jong Bae

IPC: H01L21/8234 ,  H01L21/762

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate including a device region defined by a trench in the substrate. The semiconductor device includes a plurality of fin-shaped active regions spaced apart from each other in the device region and extending in a first direction. The semiconductor device includes a protruding pattern extending along a bottom surface of the trench. Moreover, an interval between the protruding pattern and the plurality of fin-shaped active regions is greater than an interval between two adjacent ones of the plurality of fin-shaped active regions.

公开(公告)号：US09941281B2

公开(公告)日：2018-04-10

申请号：US15409033

申请日：2017-01-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jung-Gun You ,  Hyung-Jong Lee ,  Sung-Min Kim ,  Chong-Kwang Chang

IPC: H01L27/088 ,  H01L23/485 ,  H01L23/528 ,  H01L23/532 ,  H01L29/06

CPC classification number: H01L27/0886 ,  H01L23/485 ,  H01L23/528 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/0649

Abstract: A semiconductor device, including first and second fin patterns separated by a first trench; a gate electrode intersecting the first and second fin patterns; and a contact on at least one side of the gate electrode, the contact contacting the first fin pattern, the contact having a bottom surface that does not contact the second fin pattern, a height from a bottom of the first trench to a topmost end of the first fin pattern in a region in which the contact intersects the first fin pattern being a first height, and a height from the bottom of the first trench to a topmost end of the second fin pattern in a region in which an extension line of the contact extending along a direction in which the gate electrode extends intersects the second fin pattern being a second height, the first height being smaller than the second height.

公开(公告)号：USD766953S1

公开(公告)日：2016-09-20

申请号：US29513854

申请日：2015-01-06

Applicant: Samsung Electronics Co., Ltd.

Designer： Han-Gyul Kim ,  Sung-Min Kim ,  Chang-Hwan Kim ,  Min-Hee Lee ,  Yun-Jae Lee