公开(公告)号：US10319858B2

公开(公告)日：2019-06-11

申请号：US16128152

申请日：2018-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Kyung-Seok Oh ,  Cheol Kim ,  Heon-Jong Shin ,  Jong-Ryeol Yoo ,  Hyun-Jung Lee ,  Seong-Hoon Jeong

IPC: H01L21/84 ,  H01L27/12 ,  H01L29/66 ,  H01L29/78

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.

公开(公告)号：US20160380050A1

公开(公告)日：2016-12-29

申请号：US15137946

申请日：2016-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-Young Kwak ,  Kyung-Seok Oh ,  Seung-Jae Lee ,  Sang-Jin Hyun

IPC: H01L29/06 ,  H01L21/31 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/31 ,  H01L21/823431 ,  H01L27/0886

Abstract: A semiconductor device is provided as follows. A first fin-type pattern is disposed on a substrate. A first field insulating film is adjacent to a sidewall of the first fin-type pattern. A second field insulating film is adjacent to a sidewall of the first field insulating film. The first field insulating film is interposed between the first fin-type pattern and the second field insulating film. The second field insulating film comprises a first region and a second region. The first region is closer to the sidewall of the first field insulating film. A height from a bottom of the second field insulating film to an upper surface of the second region is larger than a height from the bottom of the second field insulating film to an upper surface of the first region.

Abstract translation: 如下提供半导体器件。 第一鳍型图案设置在基板上。 第一场绝缘膜与第一鳍型图案的侧壁相邻。 第二场绝缘膜与第一场绝缘膜的侧壁相邻。 第一场绝缘膜介于第一鳍型和第二场绝缘膜之间。 第二场绝缘膜包括第一区域和第二区域。 第一区域更靠近第一场绝缘膜的侧壁。 从第二场绝缘膜的底部到第二区域的上表面的高度大于从第二场绝缘膜的底部到第一区域的上表面的高度。

公开(公告)号：US10032641B2

公开(公告)日：2018-07-24

申请号：US15137946

申请日：2016-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dae-Young Kwak ,  Kyung-Seok Oh ,  Seung-Jae Lee ,  Sang-Jin Hyun

IPC: H01L27/088 ,  H01L21/31 ,  H01L21/8234

CPC classification number: H01L21/31 ,  H01L21/823431 ,  H01L27/0886

Abstract: A semiconductor device is provided as follows. A first fin-type pattern is disposed on a substrate. A first field insulating film is adjacent to a sidewall of the first fin-type pattern. A second field insulating film is adjacent to a sidewall of the first field insulating film. The first field insulating film is interposed between the first fin-type pattern and the second field insulating film. The second field insulating film comprises a first region and a second region. The first region is closer to the sidewall of the first field insulating film. A height from a bottom of the second field insulating film to an upper surface of the second region is larger than a height from the bottom of the second field insulating film to an upper surface of the first region.

公开(公告)号：US20190252540A1

公开(公告)日：2019-08-15

申请号：US16394671

申请日：2019-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Kyung-Seok Oh ,  Cheol Kim ,  Heon-Jong Shin ,  Jong-Ryeol Yoo ,  Hyun-Jung Lee ,  Seong-Hoon Jeong

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/423 ,  H01L21/84 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/42392 ,  H01L29/66795

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.