公开(公告)号：US12020903B2

公开(公告)日：2024-06-25

申请号：US17991024

申请日：2022-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee Kim ,  Byunghun Han ,  Hyeongmo Kang ,  Donghyeon Na ,  Dougyong Sung ,  Seungbo Shim ,  Minjae Lee ,  Myungsun Choi ,  Minyoung Hur

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/683 ,  H03H7/38

CPC classification number: H01J37/32183 ,  H01J37/32091 ,  H01L21/3065 ,  H01L21/6833 ,  H03H7/38 ,  H01J2237/334

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

公开(公告)号：US11545341B2

公开(公告)日：2023-01-03

申请号：US16891157

申请日：2020-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee Kim ,  Byunghun Han ,  Hyeongmo Kang ,  Donghyeon Na ,  Dougyong Sung ,  Seungbo Shim ,  Minjae Lee ,  Myungsun Choi ,  Minyoung Hur

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065 ,  H03H7/38

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

公开(公告)号：US11251022B2

公开(公告)日：2022-02-15

申请号：US16871427

申请日：2020-05-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kangmin Jeon ,  Dougyong Sung ,  Jongwoo Sun ,  Minkyu Sung ,  Kimoon Jung ,  Seongha Jeong ,  Ungyo Jung ,  Jewoo Han

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/311 ,  H01L21/67

Abstract: A gas supply assembly for a substrate processing apparatus includes a gas introduction part, a gas distribution plate connected to the gas introduction part, the gas distribution plate including a plurality of through holes, and a shower head disposed under the gas distribution plate, the shower head including a plurality of distribution holes in fluid communication with the plurality of through holes. One through hole is in fluid communication with at least two distribution holes, and each of the plurality of distribution holes has a first diameter and a second diameter differing from each other in the shower head.

公开(公告)号：US10971333B2

公开(公告)日：2021-04-06

申请号：US15723837

申请日：2017-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hyub Lee ,  Dougyong Sung ,  Je-Hun Woo ,  Bongseong Kim ,  Juho Lee ,  Yun-Kwang Jeon ,  Junghyun Cho

IPC: H01J37/32 ,  H01L21/67

Abstract: Embodiments of the inventive concepts provide antennas, plasma generating circuits, plasma processing apparatus, and methods for manufacturing semiconductor devices using the same. The circuits include radio-frequency power sources generating radio-frequency powers, antennas receiving the radio-frequency powers to generate plasma and having a first mutual inductance, and inductors connecting the antennas to the radio-frequency power sources, respectively. The inductors have a second mutual inductance reducing and/or canceling the first mutual inductance.

公开(公告)号：US10892145B2

公开(公告)日：2021-01-12

申请号：US16445423

申请日：2019-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sejin Oh ,  Kyohyeok Kim ,  Jongwoo Sun ,  Dougyong Sung ,  Sung-Ki Lee ,  Jaehyun Lee

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/306 ,  H01L21/027 ,  H01J37/32 ,  H01J37/22 ,  G01N21/94

Abstract: A substrate processing method includes providing a substrate into a process chamber; introducing a reference light into the process chamber; generating a plasma light in the process chamber while performing an etching process on the substrate; receiving the reference light and the plasma light; and detecting an etching end point by analyzing the plasma light and the reference light. Detecting the etching end point includes a compensation adjustment based on a change rate of an absorption signal of the reference light with respect to a change rate of an emission signal of the plasma light.

公开(公告)号：US20250046587A1

公开(公告)日：2025-02-06

申请号：US18636099

申请日：2024-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taehyun Kim ,  Chansoo Kang ,  Minju Kim ,  Daewon Kang ,  Dougyong Sung ,  Jungmo Yang ,  Sejin Oh

IPC: H01J37/32 ,  H01L21/67

Abstract: The present disclosure relates to plasma diagnostic devices. An example plasma diagnostic device includes a pinhole through which a first optical signal passes, an optical device in which the first optical signal is incident and the first optical signal is converted into a second optical signal, a filter configured to filter the second optical signal and to output a third optical signal of a specific wavelength band, and a sensor configured to monitor a distribution of the first optical signal, the second optical signal, and the third optical signal.

公开(公告)号：US11658039B2

公开(公告)日：2023-05-23

申请号：US17370705

申请日：2021-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyuho Kim ,  Nam Kyun Kim ,  Sungjun Ann ,  Myungsun Choi ,  Dougyong Sung ,  Seungbo Shim

IPC: H01L21/311 ,  H01L21/683 ,  H01J37/32

CPC classification number: H01L21/31116 ,  H01J37/3244 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/6833 ,  H01J2237/3347

Abstract: Disclosed are plasma etching apparatuses, plasma etching methods, and semiconductor device fabrication methods. The plasma etching apparatus comprises a chamber, an electrostatic chuck in a lower portion of the chamber, a radio-frequency power supply that has a connection with the electrostatic chuck and provides the electrostatic chuck with a radio-frequency power to generate a plasma in the chamber, and a controller that has a connection with the radio-frequency power supply and controls the radio-frequency power.

公开(公告)号：US11605529B2

公开(公告)日：2023-03-14

申请号：US17215232

申请日：2021-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hakyoung Kim ,  Kyeongtea Bang ,  Dougyong Sung

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a chamber; a support member in the chamber; a window plate at an upper portion of the chamber and including a window plate body and a fastening hole, wherein the fastening hole includes a lower fastening hole portion and an upper fastening hole portion. and a gas injector including a first body having a plurality of distribution nozzles and a second body having an accommodating groove to which the first body is fastened and a plurality of injection nozzles. The second body includes a first portion disposed inside the upper fastening hole portion, a second portion disposed inside the lower fastening hole portion, and a third portion disposed below the window plate. The second portion of the second body includes a gas hole extending from the accommodating groove to an external side surface of the second portion of the second body.

公开(公告)号：US11075089B2

公开(公告)日：2021-07-27

申请号：US16812953

申请日：2020-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyong Park ,  Namjun Kang ,  Dougyong Sung ,  Seungbo Shim ,  Junghyun Cho ,  Myungsun Choi

IPC: H01L21/3065 ,  H01L21/311 ,  H01L21/67 ,  H01L27/11582 ,  H01L49/02 ,  H01J37/32

Abstract: Disclosed are a method of plasma etching and a method of fabricating a semiconductor device including the same. The method of plasma etching includes loading a substrate including an etch target onto a first electrode in a chamber, the chamber including the first electrode and a second electrode arranged to face each other, and etching the target. The etching the target includes applying a plurality of RF powers to one of the first and second electrodes. The plurality of RF powers may include a first RF power having a first frequency in a range from about 40 MHz to about 300 MHz, a second RF power having a second frequency in a range from about 100 kHz to about 10 MHz, and a third RF power having a third frequency in a range from about 10 kHz to about 5 MHz.

公开(公告)号：US10854485B2

公开(公告)日：2020-12-01

申请号：US16703270

申请日：2019-12-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minsung Kim ,  Myoung Soo Park ,  Dongyun Yeo ,  Dougyong Sung ,  Suho Lee ,  Yun-Kwang Jeon

IPC: H01L21/67 ,  H01L21/683 ,  H01L21/3065 ,  H01L21/311 ,  H02N13/00 ,  H01J37/32 ,  H01L21/324 ,  H01L21/3213

Abstract: An electrostatic chuck, a substrate processing apparatus, and a method of manufacturing a semiconductor device are provided. The electrostatic chuck comprises a chuck base, an insulation plate on the chuck base, a first heater comprising a cell heater in the insulation plate, and a heater controller configured to control the cell heater. The heater controller obtains a resistance of the cell heater and compares the resistance with a threshold value to control a heating power provided to the cell heater.