公开(公告)号：US20220108742A1

公开(公告)日：2022-04-07

申请号：US17062148

申请日：2020-10-02

Applicant: QUALCOMM Incorporated

Inventor： Xia LI ,  Zhongze WANG ,  Xiaonan CHEN ,  Xiaochun ZHU

IPC: G11C11/4094 ,  G11C11/4091 ,  G11C11/4099 ,  G11C11/404 ,  G11C5/06

Abstract: Certain aspects of the present disclosure provide a circuit for in-memory computation. The circuit generally includes a memory cell having a bit-line and a complementary bit-line, a first capacitive element coupled to the bit-line, a second capacitive element coupled to the complementary bit-line, a processing circuit, a first switch coupled between a first input of the processing circuit and the bit-line, and a second switch coupled between a second input of the processing circuit and the complementary bit-line

公开(公告)号：US20160126453A1

公开(公告)日：2016-05-05

申请号：US14994212

申请日：2016-01-13

Applicant: QUALCOMM Incorporated

Inventor： Wei-Chuan CHEN ,  Kangho LEE ,  Xiaochun ZHU ,  Seung H. KANG

IPC: H01L43/02 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Perpendicular magnetic anisotropy (PMA) type magnetic random access memory cells are constructed with a composite PMA layer to provide a magnetic tunnel junction (MTJ) with an acceptable thermal barrier. A PMA coupling layer is deposited between a first PMA layer and a second PMA layer to form the composite PMA layer. The composite PMA layer may be incorporated in PMA type MRAM cells or in-plane type MRAM cells.

Abstract translation: 垂直磁各向异性（PMA）型磁性随机存取存储单元由复合PMA层构成，以提供具有可接受热障的磁隧道结（MTJ）。 PMA耦合层沉积在第一PMA层和第二PMA层之间以形成复合PMA层。 复合PMA层可以并入PMA型MRAM细胞或平面内MRAM细胞中。

公开(公告)号：US20160072043A1

公开(公告)日：2016-03-10

申请号：US14483104

申请日：2014-09-10

Applicant: QUALCOMM Incorporated

Inventor： Chando PARK ,  Kangho LEE ,  Jimmy KAN ,  Matthias Georg Gottwald ,  Xiaochun ZHU ,  Seung Hyuk KANG

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01L43/08 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) device includes a pinned layer, a tunnel barrier layer on the pinned layer, and a free layer on the tunnel barrier layer. The MTJ device also includes a perpendicular magnetic anisotropic (PMA) enhancement layer on the free layer, a capping layer on the PMA enhancement layer, and a conductive path electrically shorting the capping layer, the PMA enhancement layer and the free layer. A method of fabricating a perpendicular magnetic tunnel junction (pMTJ) device includes forming a capping layer, a perpendicular magnetic anisotropic (PMA) enhancement layer and a free layer. The method also includes forming a conductive layer to short the capping layer, the PMA enhancement layer and the free layer.

Abstract translation: 磁性隧道结（MTJ）装置包括钉扎层，钉扎层上的隧道势垒层和隧道势垒层上的自由层。 MTJ装置还包括在自由层上的垂直磁各向异性（PMA）增强层，PMA增强层上的覆盖层以及电封闭封盖层，PMA增强层和自由层的导电路径。 制造垂直磁性隧道结（pMTJ）器件的方法包括形成覆盖层，垂直磁性各向异性（PMA）增强层和自由层。 该方法还包括形成导电层以缩短封盖层，PMA增强层和自由层。

公开(公告)号：US20170010864A1

公开(公告)日：2017-01-12

申请号：US14882255

申请日：2015-10-13

Applicant: QUALCOMM Incorporated

Inventor： David JACOBSON ,  Xiaochun ZHU ,  Wenqing WU ,  Kendrick Hoy Leong YUEN ,  Seung KANG

IPC: G06F7/58 ,  H03M7/30 ,  G06F5/01

CPC classification number: G06F7/588 ,  G06F5/01 ,  G06F2205/00 ,  G06F2207/581 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1695 ,  G11C11/1697 ,  H03M7/30

Abstract: An entropy source and a random number (RN) generator are disclosed. In one aspect, a low-energy entropy source includes a magneto-resistive (MR) element and a sensing circuit. The MR element is applied a static current and has a variable resistance determined based on magnetization of the MR element. The sensing circuit senses the resistance of the MR element and provides random values based on the sensed resistance of the MR element. In another aspect, a RN generator includes an entropy source and a post-processing module. The entropy source includes at least one MR element and provides first random values based on the at least one MR element. The post-processing module receives and processes the first random values (e.g., based on a cryptographic hash function, an error detection code, a stream cipher algorithm, etc.) and provides second random values having improved randomness characteristics.

Abstract translation: 公开了熵源和随机数（RN）生成器。 一方面，低能量熵源包括磁阻（MR）元件和感测电路。 MR元件施加静态电流，并具有基于MR元件的磁化确定的可变电阻。 感测电路感测MR元件的电阻，并根据检测到的MR元件的电阻提供随机值。 另一方面，RN发生器包括熵源和后处理模块。 熵源包括至少一个MR元素，并且基于至少一个MR元素提供第一随机值。 后处理模块接收并处理第一随机值（例如，基于加密散列函数，错误检测码，流密码算法等）并提供具有改进的随机特性的第二随机值。

公开(公告)号：US20160092355A1

公开(公告)日：2016-03-31

申请号：US14963201

申请日：2015-12-08

Applicant: QUALCOMM INCORPORATED

Inventor： Xiangyu DONG ,  Xiaochun ZHU ,  Jungwon SUH

IPC: G06F12/08

CPC classification number: G06F12/0802 ,  G06F12/08 ,  G06F12/0855 ,  G06F12/0864 ,  G06F2212/1016 ,  G06F2212/22 ,  G06F2212/222 ,  G06F2212/60 ,  G11C7/1015 ,  G11C7/1039 ,  G11C7/1084 ,  G11C11/165 ,  G11C11/1653 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C13/0002 ,  G11C2207/2245 ,  G11C2207/2272 ,  G11C2207/2281 ,  G11C2207/229

Abstract: A method of reading from and writing to a resistive memory cache includes receiving a write command and dividing the write command into multiple write sub-commands. The method also includes receiving a read command and executing the read command before executing a next write sub-command.