公开(公告)号：US20210133549A1

公开(公告)日：2021-05-06

申请号：US16669855

申请日：2019-10-31

Applicant: QUALCOMM Incorporated

Inventor： Zhongze WANG ,  Xia LI ,  Xiaochun ZHU

IPC: G06N3/063 ,  G11C11/412 ,  G11C11/419

Abstract: Certain aspects provide a circuit for in-memory computation. The circuit generally includes a first memory cell, and a first computation circuit. The first computation circuit may include a first switch having a control input coupled to an output of the first memory cell, a second switch coupled between a node of the first computation circuit and the first switch, a control input of the second switch being coupled to a discharge word-line (DCWL), a capacitive element coupled between the node and a reference potential node, a third switch coupled between the node and a read bit-line (RBL), and a fourth switch coupled between the node and an activation (ACT) line.

公开(公告)号：US20150303373A1

公开(公告)日：2015-10-22

申请号：US14255624

申请日：2014-04-17

Applicant: QUALCOMM Incorporated

Inventor： Wei-Chuan CHEN ,  Xiaochun ZHU ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/08 ,  H01L43/12 ,  H01L43/02 ,  H01L43/10

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic tunnel junction (MTJ) includes a free layer formed from a ferrimagnetic rare-earth-transition-metal (RE-TM) alloy having the net moment dominated by a sublattice moment of a rare-earth (RE) composition of the RE-TM alloy. The MTJ further includes a pinned layer formed from a rare-earth-transition-metal (RE-TM) alloy having the net moment dominated by a sublattice moment of a rare-earth (RE) composition of the RE-TM alloy, the pinned layer comprising one or more amorphous thin insertion layers such that a net magnetic moment of the free layer and the pinned layer is low or close to zero.

Abstract translation: 磁隧道结（MTJ）包括由铁氧体稀土 - 过渡金属（RE-TM）合金形成的自由层，其具有由RE-稀土 - 过渡金属（RE-TM）合金的稀土（RE）组成的亚晶格矩所主导的净时刻， TM合金。 MTJ还包括由稀土 - 过渡金属（RE-TM）合金形成的钉扎层，其具有以RE-TM合金的稀土（RE）组合物的亚晶格矩为主的净矩，被钉扎 层包括一个或多个非晶薄插入层，使得自由层和钉扎层的净磁矩低或接近于零。

公开(公告)号：US20210073650A1

公开(公告)日：2021-03-11

申请号：US17016130

申请日：2020-09-09

Applicant: QUALCOMM Incorporated

Inventor： Matthias REISSER ,  Saurabh Kedar PITRE ,  Xiaochun ZHU ,  Edward Harris TEAGUE ,  Zhongze WANG ,  Max WELLING

IPC: G06N3/10 ,  G06N3/04 ,  G06F17/16

Abstract: In one embodiment, a method of simulating an operation of an artificial neural network on a binary neural network processor includes receiving a binary input vector for a layer including a probabilistic binary weight matrix and performing vector-matrix multiplication of the input vector with the probabilistic binary weight matrix, wherein the multiplication results are modified by simulated binary-neural-processing hardware noise, to generate a binary output vector, where the simulation is performed in the forward pass of a training algorithm for a neural network model for the binary-neural-processing hardware.

公开(公告)号：US20170186942A1

公开(公告)日：2017-06-29

申请号：US15458641

申请日：2017-03-14

Applicant: QUALCOMM Incorporated

Inventor： Kangho LEE ,  Jimmy KAN ,  Xiaochun ZHU ,  Matthias Georg GOTTWALD ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/02 ,  H01F10/32 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/305 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A material stack of a synthetic anti-ferromagnetic (SAF) reference layer of a perpendicular magnetic tunnel junction (MTJ) may include an SAF coupling layer. The material stack may also include and an amorphous spacer layer on the SAF coupling layer. The amorphous spacer layer may include an alloy or multilayer of tantalum and cobalt or tantalum and iron or cobalt and iron and tantalum. The amorphous spacer layer may also include a treated surface of the SAF coupling layer.

公开(公告)号：US20160043304A1

公开(公告)日：2016-02-11

申请号：US14454509

申请日：2014-08-07

Applicant: QUALCOMM Incorporated

Inventor： Wei-Chuan CHEN ,  Xiaochun ZHU ,  Xia LI ,  Yu LU ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: A perpendicular magnetic tunnel junction (pMTJ) device includes a perpendicular reference layer, a tunnel barrier layer on a surface of the perpendicular reference layer, and a perpendicular free layer on a surface of the tunnel barrier layer. The pMTJ device also includes a dielectric passivation layer on the tunnel barrier layer and surrounding the perpendicular free layer. The pMTJ device further includes a high permeability material on the dielectric passivation layer that is configured to be magnetized by the perpendicular reference layer and to provide a stray field to the perpendicular free layer that compensates for a stray field from the perpendicular reference layer.

Abstract translation: 垂直磁隧道结（pMTJ）器件包括垂直参考层，垂直参考层表面上的隧道势垒层和隧道势垒层表面上的垂直自由层。 pMTJ器件还包括在隧道势垒层上的电介质钝化层并围绕垂直自由层。 pMTJ器件还包括介电钝化层上的高磁导率材料，其被配置为由垂直参考层磁化，并且向垂直自由层提供杂散场，该杂散场补偿来自垂直参考层的杂散场。

公开(公告)号：US20150121006A1

公开(公告)日：2015-04-30

申请号：US14062558

申请日：2013-10-24

Applicant: QUALCOMM Incorporated

Inventor： Xiangyu DONG ,  Xiaochun ZHU ,  Jungwon SUH

IPC: G06F12/08

CPC classification number: G06F12/0802 ,  G06F12/08 ,  G06F12/0855 ,  G06F12/0864 ,  G06F2212/1016 ,  G06F2212/22 ,  G06F2212/222 ,  G06F2212/60 ,  G11C7/1015 ,  G11C7/1039 ,  G11C7/1084 ,  G11C11/165 ,  G11C11/1653 ,  G11C11/1673 ,  G11C11/1675 ,  G11C11/1693 ,  G11C13/0002 ,  G11C2207/2245 ,  G11C2207/2272 ,  G11C2207/2281 ,  G11C2207/229

Abstract: A method of reading from and writing to a resistive memory cache includes receiving a write command and dividing the write command into multiple write sub-commands. The method also includes receiving a read command and executing the read command before executing a next write sub-command.

Abstract translation: 读取和写入电阻式存储器高速缓存的方法包括接收写入命令并将写入命令分成多个写入子命令。 该方法还包括在执行下一个写入子命令之前接收读取命令并执行读取命令。

公开(公告)号：US20210233909A1

公开(公告)日：2021-07-29

申请号：US16751371

申请日：2020-01-24

Applicant: QUALCOMM Incorporated

Inventor： Junjing BAO ,  Ye LU ,  Peijie FENG ,  Chenjie TANG ,  Xiaochun ZHU

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/306 ,  H01L21/308 ,  H01L21/8238 ,  H01L29/66

Abstract: Certain aspects of the present disclosure relate to a gate-all-around (GAA) semiconductor device. One example GAA semiconductor device includes a plurality of nanosheet stack structures disposed vertically above a horizontal plane of a substrate, wherein: each nanosheet stack structure of the plurality of nanosheet stack structures comprises one or more nanosheets; the one or more nanosheets of a first nanosheet stack structure of the plurality of nanosheet stack structures comprise a first semiconductor material; and the one or more nanosheets of a second nanosheet stack structure of the plurality of nanosheet stack structures comprise a second semiconductor material different from the first semiconductor material.

公开(公告)号：US20210124793A1

公开(公告)日：2021-04-29

申请号：US16666699

申请日：2019-10-29

Applicant: QUALCOMM Incorporated

Inventor： Zhongze WANG ,  Ye LU ,  Yandong GAO ,  Xiaochun ZHU ,  Xia LI

IPC: G06F17/16 ,  G06N3/063 ,  G11C11/412 ,  G11C11/419

Abstract: Certain aspects provide a circuit for in-memory computation. The circuit generally includes an in-memory computation array having a plurality of computation circuits, each of the computation circuits being configured to perform a dot product computation. In certain aspects, each of the computation circuits includes a memory cell, a capacitive element, a precharge transistor coupled between an output of the memory cell and the capacitive element, and a read transistor coupled between a read bit line (RBL) and the capacitive element.

公开(公告)号：US20160254443A1

公开(公告)日：2016-09-01

申请号：US15149396

申请日：2016-05-09

Applicant: QUALCOMM Incorporated

Inventor： Xiaochun ZHU ,  Xia LI ,  Seung Hyuk KANG

IPC: H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L43/02 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/15 ,  G11C11/155 ,  G11C11/161 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: An in-process magnetic layer having an in-process area dimension is formed with a chemically damaged region at a periphery. At least a portion of the chemically damaged region is transformed to a chemically modified peripheral portion that is non-ferromagnetic. Optionally, the transforming is by oxidation, nitridation or fluorination, or combinations of the same.

Abstract translation: 具有处理区域尺寸的过程中的磁性层在周边形成化学损伤区域。 化学损伤区域的至少一部分被转化为非铁磁性的化学改性的周边部分。 任选地，转化是通过氧化，氮化或氟化，或其组合。

公开(公告)号：US20160181508A1

公开(公告)日：2016-06-23

申请号：US14581361

申请日：2014-12-23

Applicant: QUALCOMM Incorporated

Inventor： Kangho LEE ,  Jimmy KAN ,  Xiaochun ZHU ,  Matthias Georg GOTTWALD ,  Chando PARK ,  Seung Hyuk KANG

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01F10/3272 ,  H01F10/3286 ,  H01F41/305 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A material stack of a synthetic anti-ferromagnetic (SAF) reference layer of a perpendicular magnetic tunnel junction (MTJ) may include an SAF coupling layer. The material stack may also include and an amorphous spacer layer on the SAF coupling layer. The amorphous spacer layer may include an alloy or multilayer of tantalum and cobalt or tantalum and iron or cobalt and iron and tantalum. The amorphous spacer layer may also include a treated surface of the SAF coupling layer.

Abstract translation: 垂直磁隧道结（MTJ）的合成反铁磁（SAF）参考层的材料堆可以包括SAF耦合层。 材料堆叠还可以包括SAF耦合层上的无定形间隔层。 非晶间隔层可以包括钽和钴或钽和铁或钴以及铁和钽的合金或多层。 非晶间隔层还可以包括SAF耦合层的处理表面。