公开(公告)号：US20210096061A1

公开(公告)日：2021-04-01

申请号：US16586504

申请日：2019-09-27

Applicant: KLA Corporation

Inventor： Andrew V. Hill ,  Amnon Manassen ,  Yoram Uziel ,  Yossi Simon ,  Gilad Laredo

IPC: G01N21/17 ,  G01B11/25 ,  G06T7/00

Abstract: A metrology system may include a metrology tool to selectively perform metrology measurements in a static mode in which one or more metrology targets on a sample are stationary during a measurement or a scanning mode in which one or more metrology targets are in motion during a measurement, and a controller communicatively coupled to the translation stage and at least one of the one or more detectors. The controller may receive locations of metrology targets on the sample to be inspected, designate the metrology targets for inspection with the static mode or the scanning mode, direct the metrology tool to perform metrology measurements on the metrology targets in the static mode or the scanning mode based on the designation, and generate metrology data for the sample based on the metrology measurements on the metrology targets.

公开(公告)号：US12131959B2

公开(公告)日：2024-10-29

申请号：US17469280

申请日：2021-09-08

Applicant: KLA Corporation

Inventor： Liran Yerushalmi ,  Daria Negri ,  Ohad Bachar ,  Yossi Simon ,  Amnon Manassen ,  Nir Ben David ,  Yoram Uziel ,  Etay Lavert

IPC: H01L21/66 ,  G05B19/418

CPC classification number: H01L22/12 ,  G05B19/41875 ,  G05B2219/45031

Abstract: A system and method for generating a quality parameter value of a semiconductor device wafer (SDW), during fabrication thereof, the method including designating a plurality of measurement site sets (MSSs) on the SDW, each of the MSSs including a first measurement-orientation site (FMS) and a second measurement-orientation site (SMS), the FMS and the SMS being different measurement sites on the SDW, generating a first measurement-orientation quality parameter dataset (FMQPD) by measuring features formed within each the FMS of at least one of the MSSs in a first measurement orientation, generating a second measurement-orientation quality parameter dataset (SMQPD) by measuring features formed within each the SMS of the at least one of the MSSs in a second measurement orientation and generating at least one tool-induced-shift (TIS)-ameliorated quality parameter value (TAQPV), at least partially based on the FMQPD and the SMQPD.

公开(公告)号：US20230359129A1

公开(公告)日：2023-11-09

申请号：US17210793

申请日：2021-03-24

Applicant: KLA Corporation

Inventor： Jonathan Madsen ,  Andrei V. Shchegrov ,  Amnon Manassen ,  Andrew V. Hill ,  Yossi Simon ,  Gilad Laredo ,  Yoram Uziel

IPC: G03F7/20 ,  H01J37/304 ,  G03F9/00 ,  H01J37/317

CPC classification number: G03F7/70633 ,  H01J37/3045 ,  G03F9/7084 ,  H01J37/3177 ,  H01J2237/31764

Abstract: A multi-column metrology tool may include two or more measurement columns distributed along a column direction, where the two or more measurement columns simultaneously probe two or more measurement regions on a sample including metrology targets. A measurement column may include an illumination sub-system to direct illumination to the sample, a collection sub-system including a collection lens to collect measurement signals from the sample and direct it to one or more detectors, and a column-positioning sub-system to adjust a position of the collection lens. A measurement region of a measurement column may be defined by a field of view of the collection lens and a range of the positioning system in the lateral plane. The tool may further include a sample-positioning sub-system to scan the sample along a scan path different than the column direction to position metrology targets within the measurement regions of the measurement columns for measurements.

公开(公告)号：US20230324809A1

公开(公告)日：2023-10-12

申请号：US17715789

申请日：2022-04-07

Applicant: KLA Corporation

Inventor： Yoram Uziel ,  Ariel Hildesheim ,  Alexander Novikov ,  Amnon Manassen ,  Etay Lavert ,  Ohad Bachar ,  Yoav Grauer

IPC: G03F7/20

CPC classification number: G03F7/70633 ,  G03F7/70666 ,  G03F7/70775

Abstract: A metrology system includes an imaging system. The imaging system may include an objective lens. The metrology system may include one or more detectors. The metrology system may include an objective positioning stage structurally coupled to the objective lens and configured to adjust a focal plane of at least one of the one or more detectors via movement along an optical axis of the metrology system. The metrology system may include one or more proximity sensors configured to measure lateral positions of a stage element as the objective positioning stage moves along the optical axis. The metrology system may be configured to determine a metrology measurement associated with a target on a sample using the images and lateral positions of the stage element when implementing a metrology recipe.

公开(公告)号：US20230068016A1

公开(公告)日：2023-03-02

申请号：US17446161

申请日：2021-08-26

Applicant: KLA Corporation

Inventor： Alexander Novikov ,  Amnon Manassen ,  Ido Dolev ,  Yuri Paskover ,  Nir Ben David ,  Yoel Feler ,  Yoram Uziel

IPC: H01L21/66 ,  G01D18/00 ,  G01B21/04

Abstract: A system and method for generating an angular calibration factor (ACF) for a metrology tool useful in a fabrication process, the method including providing the metrology tool, the metrology tool including a stage and a housing, measuring a rotational orientation of the stage relative to the housing and generating the ACF for the stage based at least partially on the rotational orientation.

公开(公告)号：US11592755B2

公开(公告)日：2023-02-28

申请号：US17219869

申请日：2021-03-31

Applicant: KLA Corporation

Inventor： Amnon Manassen ,  Andrew Hill ,  Yonatan Vaknin ,  Yossi Simon ,  Daria Negri ,  Vladimir Levinski ,  Yuri Paskover ,  Anna Golotsvan ,  Nachshon Rothman ,  Nireekshan K. Reddy ,  Nir BenDavid ,  Avi Abramov ,  Dror Yaacov ,  Yoram Uziel ,  Nadav Gutman

IPC: G03F7/20 ,  G02B27/28 ,  H04N5/225

Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.

公开(公告)号：US20220344218A1

公开(公告)日：2022-10-27

申请号：US17469280

申请日：2021-09-08

Applicant: KLA Corporation

Inventor： Liran Yerushalmi ,  Daria Negri ,  Ohad Bachar ,  Yossi Simon ,  Amnon Manassen ,  Nir Ben David ,  Yoram Uziel ,  Etay Lavert

IPC: H01L21/66 ,  G01N21/95

Abstract: A system and method for generating a quality parameter value of a semiconductor device wafer (SDW), during fabrication thereof, the method including designating a plurality of measurement site sets (MSSs) on the SDW, each of the MSSs including a first measurement-orientation site (FMS) and a second measurement-orientation site (SMS), the FMS and the SMS being different measurement sites on the SDW, generating a first measurement-orientation quality parameter dataset (FMQPD) by measuring features formed within each the FMS of at least one of the MSSs in a first measurement orientation, generating a second measurement-orientation quality parameter dataset (SMQPD) by measuring features formed within each the SMS of the at least one of the MSSs in a second measurement orientation and generating at least one tool-induced-shift (TIS)-ameliorated quality parameter value (TAQPV), at least partially based on the FMQPD and the SMQPD.

公开(公告)号：US20230400780A1

公开(公告)日：2023-12-14

申请号：US18114451

申请日：2023-02-27

Applicant: KLA Corporation

Inventor： Amnon Manassen ,  Andrew V. Hill ,  Yonatan Vaknin ,  Yossi Simon ,  Daria Negri ,  Vladimir Levinski ,  Yuri Paskover ,  Anna Golotsvan ,  Nachshon Rothman ,  Nireekshan K. Reddy ,  Nir BenDavid ,  Avi Abramov ,  Dror Yaacov ,  Yoram Uziel ,  Nadav Gutman

IPC: G03F7/00 ,  G02B27/28 ,  H04N23/56

CPC classification number: G03F7/70633 ,  G02B27/283 ,  G03F7/70641 ,  H04N23/56

Abstract: A method for metrology includes directing at least one illumination beam to illuminate a semiconductor wafer on which at least first and second patterned layers have been deposited in succession, including a first target feature in the first patterned layer and a second target feature in the second patterned layer, overlaid on the first target feature. A sequence of images of the first and second target features is captured while varying one or more imaging parameters over the sequence. The images in the sequence are processed in order to identify respective centers of symmetry of the first and second target features in the images and measure variations in the centers of symmetry as a function of the varying image parameters. The measured variations are applied in measuring an overlay error between the first and second patterned layers.

公开(公告)号：US11644419B2

公开(公告)日：2023-05-09

申请号：US17160547

申请日：2021-01-28

Applicant: KLA Corporation

Inventor： Roie Volkovich ,  Liran Yerushalmi ,  Amnon Manassen ,  Yoram Uziel

IPC: G01N21/41 ,  G01N21/3563 ,  G01N21/956 ,  G01B9/02 ,  G01N21/45 ,  G01N21/25

CPC classification number: G01N21/4133 ,  G01B9/02 ,  G01N21/25 ,  G01N21/3563 ,  G01N21/45 ,  G01N21/956 ,  G01N2021/3568

Abstract: A method for optical inspection includes illuminating a patterned polymer layer on a semiconductor wafer with optical radiation over a range of infrared wavelengths, measuring spectral properties of the optical radiation reflected from multiple points on the patterned polymer layer over the range of infrared wavelengths, and based on the measured spectral properties, computing a complex refractive index of the patterned polymer layer.

公开(公告)号：US11409205B2

公开(公告)日：2022-08-09

申请号：US16964734

申请日：2020-06-25

Applicant: KLA CORPORATION

Inventor： Itay Gdor ,  Yuval Lubashevsky ,  Yuri Paskover ,  Yoram Uziel ,  Nadav Gutman

IPC: G03F9/00 ,  G03F7/20

Abstract: A target for use in the measurement of misregistration between layers formed on a wafer in the manufacture of semiconductor devices, the target including a first pair of periodic structures (FPPS) and a second pair of periodic structures (SPPS), each of the FPPS and the SPPS including a first edge, a second edge, a plurality of first periodic structures formed in a first area as part of a first layer and having a first pitch along a first pitch axis, the first pitch axis not being parallel to either of the first edge or second edge, and a plurality of second periodic structures formed in a second area as part of a second layer and having the first pitch along a second pitch axis, the second pitch axis being generally parallel to the first pitch axis.