Thin film transistor, method for manufacturing the same and display device

    公开(公告)号:US10510857B2

    公开(公告)日:2019-12-17

    申请号:US15865793

    申请日:2018-01-09

    Abstract: A method for manufacturing a thin film transistor includes: forming a source electrode and a first insulation pattern, where an orthographic projection of the first insulation pattern at a substrate is within an orthographic projection of the source electrode at the substrate; forming an active layer, a second insulation pattern and a gate electrode on the substrate, an exposed portion of the source electrode not covered by the first insulation pattern and the first insulation pattern; exposing a first portion of the action layer on the first insulation pattern by removing parts of the gate electrode and the second insulation pattern; and performing a plasma treatment to the exposed first portion, thereby forming a drain electrode.

    Folding device and folding method
    12.
    发明授权

    公开(公告)号:US12269201B2

    公开(公告)日:2025-04-08

    申请号:US17761039

    申请日:2021-05-18

    Abstract: A folding device and a folding method are provided. The folding device includes a bearing and fixing mechanism configured to bear and fix a main body portion of a to-be-folded device; a folding mechanism disposed on at least one lateral side of the bearing and fixing mechanism, the folding mechanism being configured to bear a to-be-folded portion of the to-be-folded device and fold the to-be-folded portion to one side in a thickness direction of the main body portion; a first driving mechanism configured to drive the folding mechanism to move along a direction perpendicular to a bearing surface, which bears the main body portion, of the bearing and fixing mechanism; and a second driving mechanism configured to drive the folding mechanism to move close to or away from the bearing and fixing mechanism along a direction parallel to the bearing surface.

    Manufacturing method of array substrate

    公开(公告)号:US11798959B2

    公开(公告)日:2023-10-24

    申请号:US16965495

    申请日:2019-07-22

    CPC classification number: H01L27/1288 H01L27/1248

    Abstract: Provided are an array substrate and a manufacturing method thereof, the manufacturing method includes: forming a first active layer on a base substrate; forming a second active layer; forming a second gate on the second active layer; forming a first insulating layer covering the first active layer on the second gate; patterning the first insulating layer to form first via holes at both sides of the second gate to expose the second active layer; depositing a first metal layer in the first via holes and on the first insulating layer; patterning the first metal layer, removing a part of the first metal layer above the first active layer to expose the first insulating layer; etching the first insulating layer using the patterned first metal layer as a mask, forming second via holes above the first active layer to expose the first active layer; cleaning the exposed first active layer.

    Semiconductor Apparatus, Pixel Circuit and Control Method Thereof

    公开(公告)号:US20210233467A1

    公开(公告)日:2021-07-29

    申请号:US16767351

    申请日:2019-12-18

    Abstract: The present application discloses a semiconductor apparatus, a pixel circuit and a control method thereof. The semiconductor apparatus comprises: an active layer; a first insulating layer; a first gate and a second gate overlapping with a portion of the active layer with the first insulating layer interposed therebetween, respectively; a first electrode, a second electrode and a third electrode, the first electrode and the second electrode are electrically connected with a first portion and a second portion of the active layer, respectively, the third electrode is used to be electrically connected with a photosensitive device, wherein the third electrode is electrically connected with the first gate or the second gate; or the third electrode is electrically connected with a third portion of the active layer.

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