公开(公告)号：US20210371972A1

公开(公告)日：2021-12-02

申请号：US16889017

申请日：2020-06-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin XIE ,  Carmen LEAL CERVANTES ,  Feng CHEN ,  Lu CHEN ,  Wenjing XU ,  Aravind KAMATH ,  Cheng-Hsiung Matthew TSAI ,  Tae Hong HA ,  Alexander JANSEN ,  Xianmin TANG

IPC: C23C14/56 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

公开(公告)号：US20170098540A1

公开(公告)日：2017-04-06

申请号：US15280161

申请日：2016-09-29

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin XIE ,  Feng Q. LIU ,  Daping YAO ,  Alexander JANSEN ,  Joung Joo LEE ,  Adolph Miller ALLEN ,  Xianmin TANG ,  Mei CHANG

IPC: H01L21/02 ,  B08B5/00 ,  B08B9/027 ,  B08B7/00

CPC classification number: H01L21/02068 ,  B08B3/00 ,  B08B3/106 ,  B08B5/00 ,  B08B7/0035 ,  B08B9/00 ,  B08B9/027 ,  C23G1/24 ,  F01D5/005 ,  F05D2230/90 ,  H01L21/02063 ,  H01L21/76814

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening; and exposing the substrate to a process gas comprising about 80 to about 100 wt. % of an alcohol to reduce a contaminated surface of the conductive material.

公开(公告)号：US20240384396A1

公开(公告)日：2024-11-21

申请号：US18589392

申请日：2024-02-27

Applicant: Applied Materials, Inc.

Inventor： Xiangjin XIE ,  Suhas UMESH ,  Martin Lee RIKER

IPC: C23C14/54

Abstract: Embodiments of process chambers having a collimator are provided herein. In some embodiments, a process chamber includes: a chamber body having sidewalls and a top plate to define an interior volume therein, the top plate configured to support a target in the interior volume; a substrate support disposed in the interior volume opposite the top plate; a collimator disposed in the interior volume between the top plate and the substrate support; and a lower shield disposed in the interior volume about the collimator and coupled to the chamber body at a location below an upper surface of the collimator via a ceramic spacer disposed between the lower shield and the chamber body configured to electrically decouple the lower shield from the chamber body.

公开(公告)号：US20240183028A1

公开(公告)日：2024-06-06

申请号：US18442234

申请日：2024-02-15

Applicant: Applied Materials, Inc.

Inventor： Xiangjin XIE ,  Carmen LEAL CERVANTES ,  Feng CHEN ,  Lu CHEN ,  Wenjing XU ,  Aravind KAMATH ,  Cheng-Hsiung Matthew TSAI ,  Tae Hong HA ,  Alexander JANSEN ,  Xianmin TANG

IPC: C23C14/56 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC classification number: C23C14/564 ,  H01J37/32082 ,  H01L21/02043 ,  H01L21/67017 ,  H01J2237/022

Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

公开(公告)号：US20230122969A1

公开(公告)日：2023-04-20

申请号：US18067415

申请日：2022-12-16

Applicant: Applied Materials, Inc.

Inventor： Shirish PETHE ,  Fuhong ZHANG ,  Joung Joo LEE ,  Rui LI ,  Xiangjin XIE ,  Xianmin TANG

IPC: H01L21/768 ,  H01L21/3215 ,  H01L21/3213

Abstract: Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.

公开(公告)号：US20220336207A1

公开(公告)日：2022-10-20

申请号：US17857361

申请日：2022-07-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Carmen LEAL CERVANTES ,  Alexander JANSEN ,  Xiangjin XIE

IPC: H01L21/02

Abstract: A method of cleaning a surface of a substrate uses alcohol and water treatments. The method may include applying an alcohol treatment on a surface of the substrate with the alcohol treatment configured to provide surface reduction and applying a water treatment to the surface of the substrate with the water treatment configured to enhance selectivity of at least a portion of the surface for a subsequent barrier layer process by removing alcohol from the at least a portion of the surface. The water treatment may be performed simultaneously with the alcohol treatment or performed after the alcohol treatment. The water treatment may include vaporized water or water injected into a plasma to produce hydrogen or oxygen radicals.

公开(公告)号：US20220084882A1

公开(公告)日：2022-03-17

申请号：US17022058

申请日：2020-09-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Lanlan ZHONG ,  Fuhong ZHANG ,  Gang SHEN ,  Feng CHEN ,  Rui LI ,  Xiangjin XIE ,  Tae Hong HA ,  Xianmin TANG

IPC: H01L21/768 ,  C23C16/455 ,  G11B5/31

Abstract: Methods and apparatus for filling features on a substrate are provided herein. In some embodiments, a method of filling features on a substrate includes: depositing a first metallic material on the substrate and within a feature disposed in the substrate in a first process chamber via a chemical vapor deposition (CVD) process at a first temperature; depositing a second metallic material on the first metallic material in a second process chamber at a second temperature and at a first bias power to form a seed layer of the second metallic material; etching the seed layer in the second process chamber at a second bias power greater than the first bias power to form an intermix layer within the feature comprising the first metallic material and the second metallic material; and heating the substrate to a third temperature greater than the second temperature, causing a reflow of the second metallic material.

公开(公告)号：US20210118729A1

公开(公告)日：2021-04-22

申请号：US17036038

申请日：2020-09-29

Applicant: Applied Materials, Inc.

Inventor： Shirish PETHE ,  Fuhong ZHANG ,  Joung Joo LEE ,  Rui LI ,  Xiangjin XIE ,  Xianmin TANG

IPC: H01L21/768 ,  H01L21/3215 ,  H01L21/3213

Abstract: Embodiments disclosed herein generally relate to methods of depositing a plurality of layers. A doped copper seed layer is deposited in a plurality of feature definitions in a device structure. A first copper seed layer is deposited and then the first copper seed layer is doped to form a doped copper seed layer, or a doped copper seed layer is deposited directly. The doped copper seed layer leads to increased flowability, reducing poor step coverage, overhang, and voids in the copper layer.