公开(公告)号：US20210398798A1

公开(公告)日：2021-12-23

申请号：US16906999

申请日：2020-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Carmen LEAL CERVANTES ,  Alexander JANSEN ,  Xiangjin XIE

IPC: H01L21/02

Abstract: A method of cleaning a surface of a substrate uses alcohol and water treatments. The method may include applying an alcohol treatment on a surface of the substrate with the alcohol treatment configured to provide surface reduction and applying a water treatment to the surface of the substrate with the water treatment configured to enhance selectivity of at least a portion of the surface for a subsequent barrier layer process by removing alcohol from the at least a portion of the surface. The water treatment may be performed simultaneously with the alcohol treatment or performed after the alcohol treatment. The water treatment may include vaporized water or water injected into a plasma to produce hydrogen or oxygen radicals.

公开(公告)号：US20240183028A1

公开(公告)日：2024-06-06

申请号：US18442234

申请日：2024-02-15

Applicant: Applied Materials, Inc.

Inventor： Xiangjin XIE ,  Carmen LEAL CERVANTES ,  Feng CHEN ,  Lu CHEN ,  Wenjing XU ,  Aravind KAMATH ,  Cheng-Hsiung Matthew TSAI ,  Tae Hong HA ,  Alexander JANSEN ,  Xianmin TANG

IPC: C23C14/56 ,  H01J37/32 ,  H01L21/02 ,  H01L21/67

CPC classification number: C23C14/564 ,  H01J37/32082 ,  H01L21/02043 ,  H01L21/67017 ,  H01J2237/022

Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

公开(公告)号：US20220336207A1

公开(公告)日：2022-10-20

申请号：US17857361

申请日：2022-07-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Carmen LEAL CERVANTES ,  Alexander JANSEN ,  Xiangjin XIE

IPC: H01L21/02

Abstract: A method of cleaning a surface of a substrate uses alcohol and water treatments. The method may include applying an alcohol treatment on a surface of the substrate with the alcohol treatment configured to provide surface reduction and applying a water treatment to the surface of the substrate with the water treatment configured to enhance selectivity of at least a portion of the surface for a subsequent barrier layer process by removing alcohol from the at least a portion of the surface. The water treatment may be performed simultaneously with the alcohol treatment or performed after the alcohol treatment. The water treatment may include vaporized water or water injected into a plasma to produce hydrogen or oxygen radicals.

公开(公告)号：US20230005844A1

公开(公告)日：2023-01-05

申请号：US17839827

申请日：2022-06-14

Applicant: Applied Materials, Inc.

Inventor： Suketu PARIKH ,  Alexander JANSEN ,  Joung Joo LEE ,  Lequn LIU

IPC: H01L23/532 ,  H01L23/522 ,  H01L21/768 ,  H01L21/67

Abstract: Interconnect structures on a substrate have low resistivity and high dopant interfaces. In some embodiments, the structures may have an opening with a sidewall from an upper surface to an underlying metallic layer of copper, a barrier layer of tantalum nitride formed on the sidewall of the opening, a liner layer of cobalt or ruthenium formed on the barrier layer and on the underlying metallic layer, a first copper layer with a dopant with a first dopant content formed on the liner layer and filling a lower portion of the opening to form a via-the first dopant content is approximately 0.5 percent to approximately 10 percent, and a second copper layer with the dopant with a second dopant content formed on the first copper layer and filling the at least one opening—the second dopant content is more than zero to approximately 0.5 percent of the dopant and is less than the first dopant content.

公开(公告)号：US20230005789A1

公开(公告)日：2023-01-05

申请号：US17839817

申请日：2022-06-14

Applicant: Applied Materials, Inc.

Inventor： Suketu PARIKH ,  Alexander JANSEN ,  Joung Joo LEE ,  Lequn LIU

IPC: H01L21/768 ,  H01L21/02 ,  H01L21/3105 ,  H01L23/532

Abstract: Methods for forming interconnects on a substrate with low resistivity and high dopant interfaces. In some embodiments, a method includes depositing a first copper layer with a dopant with a first dopant content of 0.5 percent to 10 percent in the interconnect by sputtering a first copper-based target at a first temperature of zero degrees Celsius to 200 degrees Celsius, annealing the substrate at a second temperature of 200 degrees Celsius to 400 degrees Celsius to reflow the first copper layer, depositing a second copper layer with the dopant with a second dopant content of zero percent to 0.5 percent by sputtering a second copper-based target at the first temperature of zero degrees Celsius to 200 degrees Celsius, and annealing the substrate at a third temperature of 200 degrees Celsius to 400 degrees Celsius to reflow the second copper layer.

公开(公告)号：US20210371972A1

公开(公告)日：2021-12-02

申请号：US16889017

申请日：2020-06-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin XIE ,  Carmen LEAL CERVANTES ,  Feng CHEN ,  Lu CHEN ,  Wenjing XU ,  Aravind KAMATH ,  Cheng-Hsiung Matthew TSAI ,  Tae Hong HA ,  Alexander JANSEN ,  Xianmin TANG

IPC: C23C14/56 ,  H01L21/02 ,  H01L21/67 ,  H01J37/32

Abstract: Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

公开(公告)号：US20170098540A1

公开(公告)日：2017-04-06

申请号：US15280161

申请日：2016-09-29

Applicant: APPLIED MATERIALS, INC.

Inventor： Xiangjin XIE ,  Feng Q. LIU ,  Daping YAO ,  Alexander JANSEN ,  Joung Joo LEE ,  Adolph Miller ALLEN ,  Xianmin TANG ,  Mei CHANG

IPC: H01L21/02 ,  B08B5/00 ,  B08B9/027 ,  B08B7/00

CPC classification number: H01L21/02068 ,  B08B3/00 ,  B08B3/106 ,  B08B5/00 ,  B08B7/0035 ,  B08B9/00 ,  B08B9/027 ,  C23G1/24 ,  F01D5/005 ,  F05D2230/90 ,  H01L21/02063 ,  H01L21/76814

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening; and exposing the substrate to a process gas comprising about 80 to about 100 wt. % of an alcohol to reduce a contaminated surface of the conductive material.